• 한국분말재료학회지
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• 제11권5호
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• pp.421-426
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• 2004

The microstructure and mechanical property of hot-pressed $Al_2O_3/Cu$ composites with a different temperature for atmosphere changing from H$_{2}$ to Ar have been studied. When atmosphere-changed from H$_{2}$ to Ar gas at 145$0^{\circ}C$, the hot-pressed composite was characterized by inhomogeneous microstructure and low fracture strength. On the contrary, when atmosphere-changed at low temperature of 110$0^{\circ}C$ the composite showed more homogeneous microstructure, higher fracture strength and smaller deviation in strength. Based on the thermodynamic consideration and microstructural analysis, it was interpreted that the Cu wetting behavior relating to the formation of CuAlO$_{2}$ is probably responsible for strong dependence of microstructure on atmosphere changing temperature. The reason for a strong sensitivity of fracture strength and especially of its deviation to atmosphere changing temperature was explained by the microstructural inhomogeneity and by the role of CuAlO$_{2}$ phase on the interfacial bonding strength.

• 한국주조공학회지
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• 제34권4호
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• pp.130-135
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• 2014

Efforts have been made to develop new silicon-free aluminum casting alloys that possess high electrical and thermal conductivity. In this research Al-Fe-Cu-Mg alloys with various Cu and Mg contents were investigated for their various properties. As the Cu or Mg content was increased, the electrical conductivity gradually decreased, while the tensile strength of the Al-Fe-Cu-Mg alloy tended to be improved. It was found that fluidity was generally inversely proportional to the Cu content, but the alloys containing 1%Mg showed considerably low fluidity, regardless of the Cu content.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.16.1-16.1
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• 2007

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.225-229
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• 2009

The front metal contact is one of the most important element influences in efficiency in the silicon solar cell. First of all selective of the material and formation method is important in metal contacts. Commercial solar cells with screen-printed contacts formed by using Ag paste process is simple relatively and mass production is easy. But it suffer from a low fill factor and a high shading loss because of high contact resistance. Besides Ag paste too expensive. because of depends income. This paper applied for Ni/Cu metallization replace for paste of screen printing front metal contact. Low cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the screen-printed Ag contacts. Ni has been proposed as a suitable silicide for the salicidation process and is expected to replace conventional silicides. Copper is a promising material for the electrical contacts in solar cells in terms of conductivity and cost. In experiments Ni/Cu metal contact applied same grid formation of screen-printed solar cell. And it has variation of different grid spacing. It was verified that the wide spacing of grid finger could increase the series resistance also the narrow spacing of grid finger also implies a grid with a higher density of grid fingers. Through different grid spacing found alteration of efficiency.

• 청정기술
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• 제19권3호
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• pp.287-294
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• 2013

구리-제올라이트 촉매와 Fe-제올라이트 촉매로 과잉산소 분위기에서 일산화질소의 암모니아 선택적 촉매환원반응을 체계적으로 조사하였다. 촉매는 디젤엔진에서의 SCR기술의 적용을 위하여 구리와 철을 $NH_4$-BEA와 $NH_4$-ZSM-5 제올라이트에 이온교환법과 함침법으로 담지시켜 제조하였다. 촉매의 특성은 BET, XRD, FE-TEM과 SEM/EDS를 사용하여 조사하였다. 고정된 반응조건에서 선택적 촉매환원반응의 활성을 조사한 결과에서 구리를 BEA 제올라이트에 이온교환시켜 제조한 촉매가 $200{\sim}250^{\circ}C$의 저온영역에서 탁월한 성능을 나타내었다. $250^{\circ}C$ 이하의 저온에서 구리-제올라이트 촉매가 Fe-제올라이트 촉매보다 높은 반응활성을 나타내었다. BEA 제올라이트에 담지된 촉매가 ZSM-5 제올라이트에 담지된 촉매보다 $250^{\circ}C$ 이하의 저온에서 우수한 반응활성을 나타내었다.

• 한국재료학회지
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• 제13권8호
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• 마이크로전자및패키징학회지
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• 제20권3호
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• pp.53-57
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• 2013

Sn-3.0Ag-0.5Cu 무연솔더에서 Ag 함량의 감소는 기계적 충격 신뢰성 향상에 도움이 되는 반면 솔더링성을 저하시키는 것으로 알려져 있다. 본 연구에서는 저 Ag함유 무연솔더의 솔더링성 향상을 위해 In을 첨가한 Sn-1.2Ag-0.7Cu-0.4In 4원계 조성과 여기에 미량의 Mn 및 Pd을 첨가한 무연솔더 조성에 대하여 솔더 젖음성을 평가하고, 보드 레벨 BGA 패키지의 열싸이클링 및 기계적 충격 신뢰성을 평가하였다. Sn-1.2Ag-0.7Cu 조성에 0.4 wt% In을 첨가한 합금의 젖음성은 Sn-3.0Ag-0.5Cu에 근접한 수준으로 향상되었으나, 패키지의 열싸이클링 신뢰성은 Sn-3.0Ag-0.5Cu에 미치지 못하는 것으로 나타났다. Sn-1.2Ag-0.7Cu-0.4In 조성에 0.03 wt% Pd의 첨가는 솔더 젖음성 및 패키지 신뢰성을 저하시킨 반면에 0.1 wt% Mn을 첨가한 합금은 특히 기계적 충격 신뢰성이 Sn-3.0Ag-0.5Cu는 물론 Sn-1.0Ag-0.5Cu보다도 우수한 수준으로 향상되었는데, 이는 Mn 첨가가 합금의 모듈러스를 감소시킨 데에 기인하는 것으로 생각된다.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.29-33
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• 2012

The demand for 3D wafer level integration has been increasing significantly. Although many technical challenges of wafer stacking are still remaining, wafer stacking is a key technology for 3D integration due to a high volume manufacturing, smaller package size, low cost, and no need for known good die. Among several new process techniques Cu-to-Cu wafer bonding is the key process to be optimized for the high density and high performance IC manufacturing. In this study two main challenges for Cu-to-Cu wafer bonding were evaluated: misalignment and bond quality of bonded wafers. It is demonstrated that the misalignment in a bonded wafer was mainly due to a physical movement of spacer removal step and the bond quality was significantly dependent on Cu bump dishing and oxide erosion by Cu CMP.

• Macromolecular Research
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• 제13권5호
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• pp.391-396
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• 2005

The polymerization of methyl methacrylate (MMA) was carried out using CuBr/bidentate phosphorus ligand catalyst systems. MMA polymerization with CuBr/phosphine-phosphinidene (PP) exhibited high conversion ($\~80\%$) in 5 h at $90^{\circ}C$ along with a linear increase of ln($[M]_0/[M]$) versus time, indicating constant concentration of the propagating radicals during the polymerization. The molecular weight of the prepared PMMA tended to increase with conversion, suggesting the living polymerization characteristic of the system. On the other hand, a large difference between the measured and theoretical molecular weight and a broad molecular weight distribution were observed, implicating possible incomplete control over the polymerization. This may have been caused by the low deactivation rate constant ($\kappa_{deact}$) of the system. The low $\kappa_{deact}$, would result in irreversible generation of radicals instead of reversible activation/deactivation process of ATRP. Polymerizations performed at different ligand to CuBr ratios and different monomer to initiator ratios did not afford better control over the polymerization, suggesting that the controllability of CuBr/phosphorus ligand system for ATRP is inherently limited.

• 한국재료학회지
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• 제21권10호
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.