• 한국결정학회지
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• 제12권4호
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• pp.233-238
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• 2001

1㎛ 이하로 집속된 방사광원으로부터의 x-선을 이용하여 새로운 분석법인 x-선 미세회절(x-ray microdiffraction)을 사용하면 다결정시료 내 grain들의 방위나 strain의 국지적 분포를 정밀하게 측정할 수 있다. 포항가속기연구소 방사광원의 x-ray microbeam 실험 장치를 사용하여 찍은 Laue 사진을 측별히 쓰여진 분석 software를 이용하여 분석함으로써 고집적회로에 쓰이는것과 같은 방법으로 제작된 Si wafer 상의 다른 선폭의 구리 도선들이 가지는 texture 를 밝혀내었다. 실험시 x-ray빔의 크기는 2×3㎛²정도이었으며, 분석 결과에의하면 선폭 1㎛도선에서는 grain들이 방위가 특정한 방향성이 없는 반면, 선폭 20㎛도선의 중앙부분에서는 〈111〉fiber texture 가 관측되었다. Grain들의 크기는 선폭 1㎛의도선에서 2∼5㎛, 선폭 20㎛의도선에서는 6∼8㎛로 측정되었다.

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.13-16
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• 2006

AIN thin films were prepared on amorphous glass and $SiO_2(1{\mu}m)/Si(100)$ substrate by the facing targets sputtering (FTS) apparatus, which can provide high density plasma, a high deposition rate at a low working gas pressure. The AIN thin films were deposited at a different nitrogen gas flow rate ($1.0{\sim}0.3$) and other sputtering parameters were fixed such as sputtering power of 200w, working pressures of 1mTorr and AIN thin film thickness of 800 nm, respectively. The thickness and crystallographic characteristics of AIN thin films as a function of $N_2$ gas flow rate $[N_2/(N_2+Ar)]$ were measured by $\alpha$-step and an X-ray diffraction (XRD) instrument. And the c-axis preferred orientations were evaluated by rocking curve. In the results, we could prepared the AIN thin film with c-axis preferred orientation of about $5^{\circ}$ on substrate temperature R.T. at nitrogen gas flow rate 0.7.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.10-14
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• 2005

Zinc Oxide(ZnO) thin films on Si (100) substrates were deposited by RF magnetron reactive sputtering. The characteristics of zinc oxide thin films with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance were investigated. To analyze a crystallographic properties of the films, $\theta/2{\theta}$ mode X -ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on Ar/$O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7\;{\Omega}cm$ was obtained at a working pressure of 10 mTorr with Ar/$O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/$O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.29-34
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• 2009

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.

• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.418-422
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• 1998

The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure($P_Ar$, 0.1~10mTorr) by using FTS apparatus at temperature of $40^{\circ}C and 220^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.

• 한국세라믹학회지
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• 제49권6호
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• pp.556-560
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• 2012

Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Nuclear Engineering and Technology
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• 제53권12호
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• pp.4052-4059
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• 2021

The microstructure of the fuel pellet plays an essential role in fission gas buildup and release and is critical for the safe and continued operation of nuclear power stations. Structural analysis of uranium dioxide (UO₂)-molybdenum (Mo) composite fuel pellets prepared at a range of sintering temperatures from 1300 to 1800 ℃ was performed. Mo micro and nanoparticles were used in making the composite pellets. A systematic investigation into the influence of processing parameters during Spark Plasma Sintering (SPS) of the pellets on the microstructure, texture, grain size, and grain boundary characters of UO₂-Mo is presented. UO₂-Mo composite show significant differences in the fraction of general boundaries and also special/coincident site lattice (CSL) boundaries. EBSD orientation maps demonstrated that <111> texturing was observed in the pellets fabricated at 1500 ℃. The experimental investigations suggest that UO₂-Mo composite pellets have favorable microstructural features compared to the UO₂ pellet.

• 한국분말재료학회지
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• 제28권4호
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• pp.325-330
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• 2021

In this study, a ZnS film of 8-mm thickness was prepared on graphite using a hot-wall-type CVD technique. The ZnS thick film was then hot isostatically pressed under different pressures (125-205 MPa) in an argon atmosphere. The effects of pressure were systematically studied in terms of crystallographic orientation, grain size, density, and transmittance during the HIP process. X-ray diffraction pattern analysis revealed that the preferred (111) orientation was well developed after a pressure of 80 MPa was applied during the HIP process. A high transmittance of 61.8% in HIP-ZnS was obtained under the optimal conditions (1010℃, 205 MPa, 6 h) as compared with a range of approximately 10% for the CVD-ZnS thick film under a 550-nm wavelength. In addition, the main cause of the improvement in transmittance was determined to be the disappearance of the scattering factor due to grain growth and the increase in density.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.177-180
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• 2002

Thickness dependence of crystallographic orientation of diol based sol-gel derived PZT(52/48) films on dielectric and piezoelectric properties was investigated The thickness of each layer by one time spinning was about 0.2 $\mu\textrm{m}$, and crack-free films was successfully deposited on 4 inches Pt/Ti/SiO$_2$/Si substrates by 0.5 mol solutions in the range from 0.2 $\mu\textrm{m}$ to 3.8 $\mu\textrm{m}$. Excellent P-E hysteresis curves were achieved without pores or any defects between interlayers. As the thickness increased , the (111) preferred orientation disappeared from 1$\mu\textrm{m}$ to 3 $\mu\textrm{m}$ region, and the orientation of films became random above 3 $\mu\textrm{m}$. Dielectric constants and longitudinal piezoelectric coefficient d$\_$33/, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of 0.8 7m. A micromachined piezoelectric cantilever have been fabricated using 0.8 $\mu\textrm{m}$ thickness PZT (52/48) films. PZT films were prepared on Si/SiN$\_$x/SiO$_2$/Ta/Pt substrate and fabricated unimorph cantilever consist of a 0.8 fm thick PZT layer on a SiNx elastic supporting layer, which becomes vibration when ac voltage is applied to the piezoelectric layer. The dielectric constant (at 100 kHz) and remanent polarization of PZT films were 1050 and 25 ${\mu}$C/$\textrm{cm}^2$, respectively. Electromechanical characteristics of the micromachined PZT cantilever in air with 200-600 $\mu\textrm{m}$ lengths are discussed in this presentation.