• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.854-856
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD(x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.131-135
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.6-8
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• 2002

In order to prepare magnetic recording layer with a good quality crystallographic characteristic. We prepared $Co_{77}Cr_{20}Ta_3$ layer for perpendicular magnetic recording media on slide glass substrate by Two-Step Methode. The thickness of magnetic layer was fixed 100 nm and buffer layer were varied from 10 to 50 nm, and input current was varied from 0.2[A] to 0.5[A]. The surface morphology and crystal orientation of the CoCrTa films were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.901-904
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• 2000

In order to investigate the effect of deposition conditions on crystallographic properties of ZnO thin films by Facing Targets Sputtering system which can deposit thin films in plasma-free situation and change the deposition conditions in wide range. The characteristics of zinc oxide thin films on power, inter targets distance, and substrate temperature were investigated by XRD(x-ray diffractometer), alpha-step (Tencor) analyses. The excellently c-axis oriented zinc oxide thin films were obtained at sputter pressure 1mTorr, sputtering current 0.4A, substrate temperature 300$^{\circ}C$, inter target distance 100mm. In these conditions, the rocking curve of zinc oxide thin films deposited on Glass was 3.9$^{\circ}$.

• Journal of the Korean institute of surface engineering
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• v.33 no.5
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• pp.356-364
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• 2000

Factors that affect the hardness of the zinc electrodeposits in the sulfate electrolyte were investigated. The hardness of zinc deposit was enhanced by increasing the concentration of impurities such as iron and nickel in the bath that changed the crystallographic orientation of the zinc deposit from the strong basal plane to the random orientation. The increase of the concentration of sodium sulfate and current density in iron contained bath improved the hardness of zinc deposit because those were easily codeposited in zinc layer. However the increase of the concentration of sodium sulfate up to 80g/$\ell$ in the bath darkened the surface of zinc electrodeposits due to change of morphology by the codeposition of iron.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.1
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• pp.1-11
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• 2019

In this study, microstructure evolution and crystallographic orientation are investigated under various deformation conditions in M1 magnesium alloy. M1 magnesium ingot was rolled at 673 K with the rolling reduction of 30%. The compression test specimens were machined out from rolled plate, and then the specimens were annealed at 823 K for 1h. Uniaxial compression tests were conducted at 723 K and under the strain rate ranging from $5.0{\times}10^{-4}s^{-1}$ to $5.0{\times}10^{-2}s^{-1}$ up to a true strain of -1.0. For observation of crystal orientation distribution, EBSD measurement was performed. Occurrence of the dynamic recrystallization and grain boundary migration were confirmed in all case of the specimens. The distribution of the grains is not uniformed in the experimental conditions.

• Journal of Welding and Joining
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• v.18 no.3
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• pp.106-113
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• 2000

Single crystallization behavior ad high temperature tensile properties of TLP bonded joints of Ni-base single crystal superalloy, CMSX-2 were investigated using MBF-80 and F-24 insert metals. CMSX-2 was bonded at 1523~1548K for 1.5~1.8ks in vacuum. The (100) orientation of bonded specimen was aligned perpendicular to the joint interface. Crystallographic orientation analyzed points over the bonded region possessed the almost same orientation across the joint interface and misorientation $\Delta^{\theta}$ was negligibly small in as-bonded and post-bond heat-treated situations. It was confirmed that single crystallization could be readily achieved during TLP bonding. The tensile strengths of all joints at elevated temperatures were equal to or greater than those of base metal the range of testing temperature between 923K and 1173K. The elongation and reduction of area in values were almost the same as those of base metal. SEM observation of the fracture surfaces of joints after tensile test revealed that the fracture surface indicated the similar morphologies each other, and that the fracture of joints occurred in the base metal in any cases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.575-580
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• 2007

A 16 Mb 1T1C FeRAM device was integrated with BLT capacitors. But a lot of cells were failed randomly during the measuring the bit-line signal distribution of each cell. The reason was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. And the grain size and orientation were severely affected by the process conditions of post heat treatment, especially nucleation step. The optimized annealing temperature at the nucleation step was $560^{\circ}C$. The microstructure of the BLT thin film was also varied by the annealing time at the step. The longer process time showed the finer grain size. Therefore, the uniformity of the grain size and orientation could be improved by changing the process conditions of the nucleation step. The FeRAM device without random bit-fail cell was successfully fabricated with the optimized BLT capacitor and the sensing margin in bit-line signal distribution of it was about 340 mV.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.79-83
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• 2003

The microstructure of bulk electrolytic MnO₂ (EMD) was studied using x-ray diffraction and transmission electron microscopy (TEM). The bulk sample showed a typical powder x-ray diffraction pattern of EMD materials. TEM study showed that the structure of EMD is present at two length scales;grains, ∼0.2 ㎛ in diameter, and ∼10 nm crystallites within the grain. The electron beam microdiffraction study revealed that each grain is an assemblage of multiphase with a common crystallographic orientation, and_that ∼50% of the crystallites are Ramsdellite, ∼30% are ε-MnO₂, and ∼15% are Pyrolusite. The ｛1120｝peak located at about 67° in powder XRD pattern as well as a high-resolution electron microscope (HREM) image of (0001) plane support the existence of ε-MnO₂ phase.