• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.22-26
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• 2003

This short communication reports on the experiment which demonstrates that superhard nanostructured films with hardness of about 40 GPa and greater can be composed not only of two or more nanocrystalline and/or amorphous phases of different materials, as it is in the case of nanocomposite coatings, but also that can be formed by a mixture of small (<10 nm) nanocrystalline grains of the same material with different crystallographic orientation and/or lattice structures. This finding opens new possibilities to develop advanced nanostructured materials with enhanced physical and functional properties.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.831-838
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• 2011

Effects of spangle size and crystallographic characteristics on the surface appearance, galling properties, and adhesive strength of hot-dip galvanized steel sheets have been investigated. Both spangle size and crystallographic orientation measured by optical microscopy, scanning electron microscopy, and X-ray diffraction were identified as critical factors influencing the galvanized coating performance. By decreasing the spangle size, surface appearance and galling properties related to the friction coefficient were significantly improved. However, low temperature adhesive-strength with small spangle galvanized steel sheets showed lower values compared to commercially used galvanized coating. The variation of adhesive strength in terms of spangle size has been clarified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.192-193
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• 2006

A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1447-1449
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• 1998

The c-axis orientation plays a very important role in controlling the main parameters of the perpendicular magnetic recording media, such as perepndicular magnetic anisotropy field $H_{K{\bot}}$, the ratio of coercive force $H_{C{\bot}}/H_{C//}$, the recording density $D_{50}$, and the dispersion of the c-axis orientation $\Delta\theta_{50}$, which is quite important for the performance as perpendicular recording media, as well as the magnetic properties of the film. In this study, the essential process requirement for preparing the Co-Cr films with the superior c-axis orientation, the dependence of $\Delta\theta_{50}$ and the magnetic properties on the film thickness $\delta$, and the effect of underlayer on the dispersion of c-axis orientation have been investigated for both the FTS and DCM system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.103-106
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• 2002

We prepared $Co_{77}Cr_{20}Ta_{3}$ thin film with Facing Targets Sputtering Apparatus. which can deposit a high quality thin film CoCrTa magnetic layer for Perpendicular magnetic recording media. In order to obtain Good Crystal orientation of CoCrTa thin films. We prepared Thin Films on slide glass substrate. The thickness of Buffer-layer were varied from 10 to 50 nm and Magnetic layer thickness fixed 100[nm]. input current was varied from 0.2[A] to 0.5[A]. Substrate temperature was varied from room temperature to ${250^{\circ}C}$ respectively. The crystal orientation of the CoCrTa film were examined with XRD. Introduce Buffer-layer thin films showed improvement of dispersion angle of c-axis orientation (${\Delta\theta}_{50}$).

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.377-378
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.31.2-31.2
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.121-121
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• 2003

NiO thin films are very attractive for use as an antiferromagnetic layer, p-type transparent conducting films, in electrochromic devices and functional sensor layer for chemical sensors, due to their excellent chemical stability, as well as optical, electrical and magnetic properties. In addition, (100)- and (111)-oriented NiO films can be used as buffer layers on which to deposit other oriented oxide films, such as c-axis-oriented perovskite-type ferromagnetic films and superconducting films, because of the similarity in symmetry of oxygen ion lattice and lattice constants between the NiO films and the oriented oxide films. Thus, controlling the crystallographic orientation and surface roughness of the NiO films for a buffer layer are very important.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.152-155
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• 2006

Silicon carbide ceramics seeded with 10-30 wt% SiC whiskers are fabricated by hot pressing and annealing. A quantitative texture analysis including calculation of the Orientation Distribution Function (ODF) is used for obtaining the degrees of preferred orientation of the fabricated samples. The microstructure and crystallographic texture are discussed with respect to the effect of ${\beta}-SiC$ whisker seeds on the resulting fracture toughness values. The SEM microstructures and the texture data reveal a correlation between texture and fracture toughness anisotropy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.172-175
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• 2003

ZnO:Al thin film for application to FBAR's bottom electrode using ZnO piezoelectric thin film were prepared by FTS, in order to improve the crystallographic properties of ZnO thin films because the ZnO:Al thin film and ZnO thin films structure is equal each other. So we prepared the ZnO:Al thin film with oxygen gas flow rate. Thickness and c-axis preferred orientation and electric properties of ZnO:Al bottom electrode were evaluated by $\alpha$-step, XRD and 4-point probe..