• Title/Summary/Keyword: Crystallographic orientation

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Orientation and thickness dependence of magnetic levitation force and trapped magnetic field of single grain YBa2Cu3O7-y bulk superconductors

  • Jung, Y.;Go, S.J.;Joo, H.T.;Lee, Y.J.;Park, S.D.;Jun, B.H.;Kim, C.J.
    • Progress in Superconductivity and Cryogenics
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    • v.19 no.1
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    • pp.30-35
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    • 2017
  • The effects of the crystallographic orientation and sample thickness on the magnetic levitation forces (F) and trapped magnetic field (B) of single grain YBCO bulk superconductors were examined. Single grain YBCO samples with a (001), (110) or (100) surface were used as the test samples. The samples used for the force-distance (F-d) measurement were cooled at 77 K without a magnetic field (zero field cooling, ZFC), whereas the samples used for the B measurement were cooled under the external magnetic field of a Nd-B-Fe permanent magnet (field cooling, FC). It was found that F and B of the (001) surface were higher than those of the (110) or (100) surface, which is attributed to the higher critical current density ($J_c$) of the (001) surface. For the (001) samples with t=5-18 mm, the maximum magnetic levitation forces ($F_{max}s$) of the ZFC samples were larger than 40 N. About 80% of the applied magnetic field was trapped in the FC samples. However, the F and B decreased rapidly as t decreased below 5 mm. There exists a critical sample thickness (t=5 mm for the experimental condition of this study) for maintaining the large levitation/trapping properties, which is dependent on the material properties and magnitude of the external magnetic fields.

Prediction of Deformation Texture in BCC Metals based on Rate-dependent Crystal Plasticity Finite Element Analysis (속도의존성 결정소성 모델 기반의 유한요소해석을 통한 BCC 금속의 변형 집합조직 예측)

  • Kim, D.K.;Kim, J.M.;Park, W.W.;Im, Y.T.;Lee, Y.S.
    • Transactions of Materials Processing
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    • v.23 no.4
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    • pp.231-237
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    • 2014
  • In the current study, a rate-dependent crystal plasticity finite element method (CPFEM) was used to simulate flow stress behavior and texture evolution of a body-centered cubic (BCC) crystalline material during plastic deformation at room temperature. To account for crystallographic slip and rotation, a rate-dependent crystal constitutive law with a hardening model was incorporated into an in-house finite element program, CAMPform3D. Microstructural heterogeneity and anisotropy were handled by assigning a crystallographic orientation to each integration point of the element and determining the stiffness matrix of the individual crystal. Uniaxial tensile tests of single crystals with different crystallographic orientations were simulated to determine the material parameters in the hardening model. The texture evolution during four different deformation modes - uniaxial tension, uniaxial compression, channel die compression, and simple shear deformation - was investigated based on the comparison with experimental data available in the literature.

Fabrication of Barium Ferrite Films by Sol-Gel Dip Coating and Its Properties.

  • T. B. Byeon;W. D. Cho;Kim, T. O.
    • Journal of Magnetics
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    • v.2 no.1
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    • pp.16-21
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    • 1997
  • Those were investigated, the crystallographic, morphological, and magnetic properties of barium ferrite film (SiO2/Si substrate) prepared by sol-gel dip coating. Appropriate sol was prepared by dissolvin barium and iron nitrate in ethylene glycol at 80$^{\circ}C$. To obtain the films, thermally oxidized p-type silicon substrate with (111) of crystallographic orientation were dipped into the sol, dried at 250$^{\circ}C$ to remove organic material, and heated at 800$^{\circ}C$ for 3 hours in air for the crystallization of barium ferrite. It was found that the particles of barium ferrite formed on the substrate exhibited needle-like shape placing parallel to the substrate and its c-axis is long axis direction. There was tendency that the coercive force in horizontal direction to the substrate was higher than that in vertical direction to it. This tendency was profound in large thickness.

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Study on the Void Growth and Coalescence in F.C.C. Single Crystals (F.C.C. 단결정재에서 기공의 성장과 합체에 관한 연구)

  • Ha, Sang-Yul;Kim, Ki-Tae
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.32 no.4
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    • pp.319-326
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    • 2008
  • In this study, we investigate the deformation behavior of F.C.C. single crystals containing micro- or submicron-sized voids by using three dimensional finite element methods. The locally homogeneous constitutive model for the rate-dependent crystal plasticity is integrated based on the backward Euler method and implemented into a finite element program (ABAQUS) by means of user-defined subroutine (UMAT). The unit cell analysis has been investigated to study the effect of stress triaxiality and crystallographic orientations on the growth and coalescence of voids in F.C.C. single crystals.

Effects of Texture on the Electrochemical Properties of Single Grains in Polycrystalline Zinc

  • Park, Chan-Jin;Lohrengel, Manuel M.;Hamelmann, Tobias;Pllaski, Milan;Kwon, Hyuk-Sang
    • Corrosion Science and Technology
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    • v.3 no.2
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    • pp.54-58
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    • 2004
  • Effects of texture on the electrochemical behaviors of single grains in polycrystalline zinc were investigated using a capillary-based micro-droplet cell. Pontiodynamic sweeps and capacity measurements were carried out in pH 9 borate buffer solution. The cyclic voltammograms and the capacity measurements on single grains with different crystallographic orientations in polycrystalline Zn showed a strong dependence of oxide growth on crystallographic grain orientation. The total charge consumed for oxide formation and the inverse capacity increased with an increase of surface packing density of grain. suggesting the oxide formation was greater on grains with higher surface packing density.

Heavy Carbon Incorporation into High-Index GaAs (고농도로 탄소 도핑된 높은 밀러 지수 GaAs)

  • Son, Chang-Sik
    • Korean Journal of Materials Research
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    • v.13 no.11
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    • pp.717-720
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    • 2003
  • Heavily $p^{ +}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.

A Study on the Nucleation of Fretting Fatigue Cracks at the Heterogeneity Material (이종재료에서 프레팅 피로 균열의 생성에 관한 연구)

  • Goh Jun Bin;Goh Chung Hyun;Lee Kee Seok
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.14 no.3
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    • pp.103-109
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    • 2005
  • Since fretting fatigue damage accumulation occurs over relatively small volumes, the role of the microstructure is quite significant in fretting fatigue analysis. The heterogeneity of discrete grains and their crystallographic orientation can be accounted for using continuum crystallographic cyclic plasticity models. Such a constitutive law used in parametric studies of contact conditions may ultimately result in more thorough understanding of realistic fretting fatigue processes. The primary focus of this study is to explore the influence of microstructure as well as the magnitude of the normal force and tangential force amplitude during the fretting fatigue process. Fretting maps representing cyclic plastic strain behaviors are also developed to shed light on the cyclic deformation mechanisms.

Performance Characteristics of Vibration Energy Harvesting Using [001] and [011]-Poled PMN-PZT Single Crystals ([001] 및 [011] 방향 분극의 압전 단결정 PMN-PZT 를 이용한 진동 에너지 수확 특성)

  • Sun, Kyung Ho;Kim, Young-Cheol;Kim, Jae Eun
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2014.10a
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    • pp.539-543
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    • 2014
  • This work investigated the electromechanical performance of a cantilevered vibration energy harvester incorporating the single crystal PMN-PZT, manufactured with the most recent technology of solid-state single crystal growth. Single crystal PMN-PZTs with two different crystallographic axes such as [011] and [001] were considered. For the [011] orientation, because material properties such as the stiffness, piezoelectric strain coefficients are not the same in the directions normal to the crystallographic axis, the effects of the transversely anisotropy on the magnitude and frequency bandwidth of output power were also analyzed.

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The Improvement of Magnetic Properties of CoCr Thin Film for Perpendicular Magnetic Recording Media (수직자기기록매체용 CoCr박막의 자기적 특성 개선에 관한 연구)

  • 공석현;손인환;최형욱;최동진;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.419-422
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    • 1999
  • We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

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Crystallographic properties of AIN thin film prepared by lacing targets sputtering method (대향타겟식 스퍼터법으로 제작된 AIN 박막의 결정학적 특성)

  • 양진석;금민종;손인환;최형욱;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.464-466
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    • 2000
  • AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

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