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http://dx.doi.org/10.3740/MRSK.2003.13.11.717

Heavy Carbon Incorporation into High-Index GaAs  

Son, Chang-Sik (Department of Photonics, Silla University)
Publication Information
Korean Journal of Materials Research / v.13, no.11, 2003 , pp. 717-720 More about this Journal
Abstract
Heavily $p^{ +}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.
Keywords
carbon; GaAs; hole; high-index; MOCVD; van-der pauw Hall;
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1 H. S. Lee, W. Y. Han, Y. Lu, M. W. Cole, R. T. Lareau, L. Casas, R. J. Thompson, A. DeAnni, K. A. Jones and L. W. Yang, Mat. Res. Soc. Sym. Proc., 240, 467 (1992)
2 R. M. Lum, J. K. Klingert, D. W. Kisker, S. M. Abys and F. A. Stevie, J. Crystal Growth, 93, 120 (1988)   DOI   ScienceOn
3 C. R. Abernathy, S. J. Pearton, F. Ren, W. S. Hobson, T. R. Fullowan, A. Katz, A. S. Jordan and J. Kovalchick, J. Crystal Growth, 105, 375 (1990)   DOI   ScienceOn
4 C. Anayama, H. Sekiguchi, M. Kondo, H. Sudo, T. Fukushima, A. Furuya and T. Tanahashi, Appl. Phys. Lett., 63, 1736 (1993)   DOI   ScienceOn
5 L. Q. Guo and M. Konagai, Jpn. J. Appl. Phys., 35, L 195 (1996)   DOI   ScienceOn
6 C. S. Son, S. I. Kim, Y. Kim, Y. K. Park, S. K. Min and I. H. Choi, J. Appl. Phys., 82, 1205 (1997)   DOI   ScienceOn
7 R. Bhat, C. E. Zah, C. Caneau, M. A. Koza, S. G. Menocal, S. A. Schwarz and F. J. Favire, Appl. Phys. Lett., 56, 1691 (1990)   DOI
8 N. Y. Li, H. K. Dong, C. W. Tu and M. Geva, Crystal Growth, 150, 246 (1995)   DOI   ScienceOn
9 N. I. Buchan, T. F. Kuech, G. J. Scilla and F. Cardone, J. Crystal Growth, 110, 405 (1991)   DOI   ScienceOn
10 P. Kurpas, E. Richter, D. Gutsche, F. Brunner and M. Weyers, Inst. Phys. Conf. Ser., 145, 177 (1995)
11 G. R. Moriaty, M. Murtagh, K. Cherkaoui, G. Gouez, P. V Kelly, G. M. Crean and S. W. Bland, Mater. Sci. Eng., B56, 284 (2001)   DOI   ScienceOn
12 M. Kondo, C. Anayama, N. Okada, H. Sekiguchi, K. Domen and T. Tanahashi, J. Appl. Phys., 76, 914 (1994)   DOI   ScienceOn
13 A. W. Nelson and L. D. Westbrook, J. Crystal Growth, 68, 102 (1984)   DOI   ScienceOn
14 S. A. Stockman, G. E. Hfler, J. N. Baillargeon, K. C. Hsieh, K. Y. Cheong and G. E. Stillman, J. Appl. Phys., 72, 981 (1992)   DOI
15 Y. Ashizawa, T. Noda, K. Morizuka, M. Asaka, A. W. Nelson and M. Obara, J. Crystal Growth, 107, 903 (1991)   DOI   ScienceOn