• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.372-373
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• 2009

In this work, the effects of substrate on the formation of YBaCuO by CVD were investigated by observing the microstructure and the crystallographic orientation and by measuring the temperature dependence of electrical resistance. Source materials used to synthesize the YBaCuO superconducting film were beta-diketone chelates of Y, Ba and Cu. These chelates were evaporated at $137-264^{\circ}C$. The source vapors of Y, Ba and Cu were transported into hot zone by using Ar gas and $O_2$ gas was introduced separately.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.920-926
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• 1994

Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${\mu}{\textrm}{m}$ compared with that of 5 ${\mu}{\textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$\times$10-8 A/$\textrm{cm}^2$ and the charge storge density as large as 25.8$\mu$C/$\textrm{cm}^2$ was obtained.

• Interaction and multiscale mechanics
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• v.4 no.2
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• pp.139-153
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• 2011

In this paper we develop a fully anisotropic pressure and temperature dependent model to investigate the effect of the microstructure on the shock response of ${\beta}$-HMX molecular single and polycrystals. This micromechanics-based model can account for crystal orientation as well as crystallographic twinning and slip during deformation and has been calibrated using existing gas gun data. We observe that due to the high degree of anisotropy of these polycrystals, certain orientations are more favorable for plastic deformation - and therefore defect and dislocation generation - than others. Loading along these directions results in highly localized deformation and temperature fields. This observation confirms that most of the temperature rise during high rates of loading is due to plastic deformation or dislocation pile up at microscale and not due to volumetric changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.703-706
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• 2002

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.60-63
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• 2006

Preparing AZO thin films on the polymer substrate has been widely studied Because AZO thin film has the potential applications. In this study, we prepared AZO thin films on polyethersulfon (PES) at room temperature. The AZO thin films were prepared at $O_2$ gas flow rate of 0.05 and sputtering power of 100W with different film thickness by facing targets sputtering method. The electrical, optical and crystallographic properties of AZO thin films were measured by Hall Effect measurement system, UV/VIS spectrometer, SEM and XRD. From the results, we obtained AZO thin films with a low resistivity, a transmittance of over 80% and c-axis preferred orientation.

• Korean Journal of Crystallography
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• v.10 no.1
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• pp.28-32
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• 1999

The title compound consisting of a calix[4]arene molecule with four phenyl rings arranged alternately in anti-orientation fashion, two propyloxy groups attached on the upper rim of calix[4]arene, and polyther chain with two phyenyl rings attached on the lower rim of calix[4]arene offers a big cavity inside a molecule with might a potential for forming host-guest complexes.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.62-66
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• 2003

The preparation of n-type thermoelectric material of Bi₂ Te/sub 2.55/Se/sub 0.45/ doped with CuBr₂ was carried out using a vertical gradient freezing method. With this method, unidirectional solidified Bi₂Te/sub 2.55/Se/sub 0.45/ has been obtained. XRD analysis demonstrated that Bi₂/sub 2.55/Se/sub 0.45/ 5 ingot has grown with prefer orientation of (0 1 5) face. Seebeck coefficient and electrical conductivity were measured as functions of temperature in the range of 373 K to 523 K on the sample which prepared via VGF method.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.77-80
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• 2006

Structural phase transformations of silicon during nanoindentation were investigated in detail at the atomic level. The molecular dynamics simulations of nanoindentation on the (100), (110) and (111) surface of single crystalline silicon were simulated, and this supported the theoretical prediction of the anisotropic behavior of structural phase transformations. Simulations showed that microscopic aspects of phase transformation varied according to the crystallographic orientation of the contact surface and were directly linked to the slip system.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.519-526
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• 1987

TiC was deposited onto several substrate steels by the Chemical Vapor Deposition technique from TiCl4-CH4-H2 gas mixtures in the horizontal resistance furnace. Deposition rates and morphologies of the coatings were investigated with the carbon contents. Deposition thickness increased linearly with the deposition time in the Presence of CH4 gas. The various interlayers of coating by EDS and X-ray Diffraction were proved as Cr7C3 and Fe3C. Chromium contents did not affect the preferred orientation of TiC deposit. The deposition was controlled by a mass transport and a surface reaction in case of 1 wt% C-5.25 wt% Cr steel irrespective of deposition temperature.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.38-42
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• 2017

Vanadium nitride (VN) coatings were deposited using inductively coupled plasma (ICP) assisted sputtering at different ICP powers. Microstructural, crystallographic and mechanical characterizations were performed by FE-SEM, AFM, XRD and nanoindentation. The results show that ICP has significant effects on coating's microstructure, structural and mechanical properties of VN coatings. With an increase in ICP power, coating microstructure evolved from a porous columnar structure to a highly dense one. Single- phase cubic (FCC) VN coatings with different preferential orientations and residual stresses were obtained as a function of ICP power. Average crystal grain sizes of single phase cubic (FCC) VN coatings were decreased from 10.1 nm to 4.0 nm with an increase in ICP power. The maximum hardness of 28.2 GPa was obtained for the coatings deposited at ICP power of 200 W. The smoothest surface morphology with Ra roughness of 1.7 nm was obtained in the VN coating sputtered at ICP power of 200 W.