• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.125-125
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• 2003

PZT(Pb(Zr,Ti)O3)는 우수한 강유전 특성을 가지기 때문에 FRAM (Ferroelectric Random Access Memory) 소자에 응용하기 위해 많은 연구가 진행되고 있다. 스퍼터에 의해 증착된 PZT는 처음에 pyrochlore상으로 존재하다가 후 열처리를 통해 이력 특성을 나타내는 perovskite상으로 천이된다. 일반적인 furnace열처리 방법은 고온에서의 장시간 열처리가 요구되고 Pb-loss현상이나 TiO2와 같은 이차상의 생성 그리고 하부 Pt전극의 roughness증가 및 crack과 같은 문제점이 있다. 최근 들어 후 열처리를 RTA로 이용하는 연구가 진행되고 있는데 이는 열처리 시간이 짧기 때문에 위와 같은 문제점을 개선할 수 있었다. 하지만 RTA방법 또한 어느 정도의 thermal budget이 존재하고 추가적 장비가 필요하며 기판의 전체적 가열공정이므로 다른 CMOS공정과 compatibility가 떨어진다. 따라서 본 실험에서는 위와 같은 문제를 해결하고자 노력을 집중하였고 이를 위한 새로운 열처리 방법을 개발하였다. 즉 Pt 하부전극에 전압(전류)을 인가하여 순간적으로 고온으로 결정화시키는 새로운 공정을 모색하였는데 이와 같은 방법은 열처리를 위한 추가적인 장비가 필요없고 국부적으로 순간적인 가열이기 때문에 glass기판에도 적합하며 RTA보다 승온시간 및 열처리 시간이 짧기 때문에 thermal budget도 줄일 수 있었다.

• Journal of Biomedical Engineering Research
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• v.16 no.1
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• pp.9-16
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• 1995

Biodegradable poly (I ,4-butanediol succinate) (PBS) was synthesized from 1,4-butanediol and succinic anhydride. The glass transition temperature of poly (I, 4-butanediol succinate) was revealed at $73^{\circ}C$. The crystallization and cold crystallization of the polymers were investigated as a function of holding time in melt state, cooling rate. reheating, and molecular weight. Chain scission and/or cmsslinking did not occur in the melt state at var.ious holding times. Slower scanning rate can allow more times for nucleation, rearrangement, and packing of the polymer chain, so the onset temperature of crystallization from the melt was increased. PBS crystallized from the melt was found to have spherulitic structure. The degradation behavior of PBS was studied under basic conditions and with microorganisms using the modified ASTM method. In the basic solution. PBS lost up to 85% of its mass within two days. Based upon visual observation, the crystalline structure of films composed of larger molecular weight polymers retained their crystallinity longer than similar structures in low molecular weight samples.

• Fibers and Polymers
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• v.5 no.3
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• pp.245-251
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• 2004

Poly(trimethylene terephthalate-co-trimethylene 2,6-naphthalate)s (P(TT-co-TN)s) with various copolymer composition were synthesized, and their chain structure, thermal property and crystalline structure were investigated by using $^1$H-NMR spectroscopy, differential scanning calorimetry (DSC) and wide-angle X-ray diffraction (WAXD), respectively. It was found from sequence analysis that all the P(TT-co-TN) copolymers synthesized have a statistical random distribution of TT and TN units. It was also observed from DSC thermograms that the glass transition temperature increases linearly with increasing the TN comonomer content, whereas the melting temperature of copolymer decreases with increasing the corresponding comonomer content in respective PTT- and PTN-based copolymer, showing pseudo-eutectic melting behavior. All the samples melt-crystallized isothermally except for P(TT-co-66 mol % TN) exhibit multiple melting endotherms and clear X-ray diffraction patterns. The multiple melting behavior originates from the dual lamellar population and/or the melting-recrystallization-remelting. The X-ray diffraction patterns are largely divided into two classes depending on the copolymer composition, i.e., PTT and PTN $\beta$-form diffraction patterns, without exhibiting cocrystallization.

• Journal of Information Display
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• v.10 no.3
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.847-851
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• 2011

This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > $150^{\circ}C$ were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at $100^{\circ}C$ showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of $4.07{\times}10^{-4}\;{\Omega}$, 85%, $10.57{\times}10^{-3}\;{\Omega}^{-1}$, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures ($100^{\circ}C$) are suitable for electrode applications, such as OLEDs as a substitute for conventional crystallized ITO films.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.215-218
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• 2011

A novel design of gas sensor using Ga-doped ZnO (GZO) thin films which are deposited on low temperature co-fired ceramic (LTCC) substrates is presented. The LTCC substrates with thickness of 400 ${\mu}m$ are fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The GZO thin films with different thickness are deposited on LTCC substrates, by RF magnetron sputtering method. The microstructure and sensing properties of GZO gas sensing films are analyzed as a function of the film thickness. The films are well crystallized in the hexagonal (wurzite) structure with increasing thickness. The maximum sensitivity of 3.49 is obtained at 100 nm film thickness and the fastest 90% response time of 27.2 sec is obtained at 50 nm film thickness for the operating temperature of $400^{\circ}C$ to the $NO_2$ gas.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.4
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• pp.165-170
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• 2018

W, Fe, and carbon powders were mechanical alloyed to produce $W_{35}Fe_{43}C_{22}$ ternary alloy powders containing nanocrystal W embedded within amorphous matrix. When the powder samples were heated to the primary crystallization temperature of $735^{\circ}C$, most parts of their amorphous region were fully crystallized to [W,Fe]-rich $M_6C$ carbides. Interestingly, a little portion of the carbides changes to stoichiometric line compounds ($M_{12}C$ and $W_6Fe_7$) and a solution phase (Fe-rich bcc), and remaining parts of the crystallites were amorphized again. The resulting microstructure was retained even by cyclic heating between room temperature of $1,200^{\circ}C$, and thus we found that the amorphous structure can be irreversibly formed at above glass transition temperature.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.449-455
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• 2010

To enhance the efficiency of dye sensitized solar cells, we proposed crystalline anatase-$TiO_{2}$ by using a low temperature process ($150^{\circ}C{\sim}250^{\circ}C$). We successfully fabricated 30 nm-$TiO_{2}$ at a fixed atomic layer deposition condition of 1.0 sec of TDMAT pulse, 20 sec of TDMAT purge, 0.5 sec of H$_{2}$O pulse, and 20 sec of H$_{2}$O purge. In order to examine the microstructure, phase, and band-gap of the TiO$_{2}$ respectively, we employed a Nano-Spec, transmission electron microscope, high resolution XRD, Auger electron spectroscopy, scanning probe microscope, and UV-VIS-NIR. We were able to fabricate a crystalline anatase-phase of 30 nm-TiO$_{2}$ successfully at temperatures above $180^{\circ}C$. Our results showed that our proposed low temperature ALD process (below $200^{\circ}C$) might be applicable to glass and flexible polymer substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.58-63
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• 2010

The glass-ceramics made from the mixture of coal bottom ash, produced from a thermal power plant mixed with $Na_2O$ and $Li_2O$ was fabricated and their crystallization behavior was studied using a non-isothermal analyzing method. The temperature for 50% crystallization was higher than the exothermic peak temperature $T_p$ at DTA curve and the quickest crystallization temperature was much the same as $T_p$ as identified from the relationships of crystallized fraction and crystallization rate with temperature. By using Kissinger equation describing a crystallization behavior, the activation energy (262 kJ/mol), the Avrami constant (1.7) and the frequency ($5.7{\times}10^{16}/s$) for crystallization were calculated from which the nepheline crystal could be expected as showing an 1~2-dimensional surface crystallization behavior mainly with some bulk crystallization tendency at the same time. The actual observation of microstructure using SEM showed the considerable amount of surface crystals of dendrite and the bulk crystals with low fraction, so the prediction by the Kissinger equation was in accord with the crystallization behavior of glass-ceramics fabricated in this study.