• Title/Summary/Keyword: Crystalline graphite

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Rate-capability response of graphite anode materials in advanced energy storage systems: a structural comparison

  • Farooq, Umer;Doh, Chil-Hoon;Pervez, Syed Atif;Kim, Doo-Hun;Lee, Sang-Hoon;Saleem, Mohsin;Sim, Seong-Ju;Choi, Jeong-Hee
    • Carbon letters
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    • v.17 no.1
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    • pp.39-44
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    • 2016
  • The work presented in this report was a detailed comparative study of the electrochemical response exhibited by graphite anodes in Li-ion batteries having different physical features. A comprehensive morphological and physical characterization was carried out for these graphite samples via X-ray diffraction and scanning electron microscopy. Later, the electrochemical performance was analyzed using galvanostatic charge/discharge testing and the galvanostatic intermittent titration technique for these graphite samples as negative electrode materials in battery operation. The results demonstrated that a material having a higher crystalline order exhibits enhanced electrochemical properties when evaluated in terms of rate-capability performance. All these materials were investigated at high C-rates ranging from 0.1C up to 10C. Such improved response was attributed to the crystalline morphology providing short layers, which facilitate rapid Li+ ions diffusivity and electron transport during the course of battery operation. The values obtained for the electrical conductivity of these graphite anodes support this possible explanation.

Tribological Properties of Reaction-Bonded SiC/Graphite Composite According to Particle Size of Graphite (반응소결 SiC/Graphite 복합체에서 Graphite 입자의 크기에 따른 마찰마모특성)

  • Baik, Yong-Hyuck;Seo, Young-Hean;Choi, Woong;Lee, Jong-Ho
    • Journal of the Korean Ceramic Society
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    • v.34 no.8
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    • pp.854-860
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    • 1997
  • The tribological property of ceramics is very important for use in seal rings, pump parts, thread guides and mechanical seal, etc. In the present study, which RBSC/graphite composites were manufactured by adding graphite powders with different particle sizes to mixtures of SiC powder, metallic silicon, carbon black and alumina, effects on the tribological property of each RBSC/graphite composite was investigated in accordance with the particle size of the added graphite powder. The water absorption, the bending strength and the resistance for the friction and wear were measured, and the crystalline phase and the microstructure were respectively examined by using XRD and SEM. In case that the particle size of the graphite powder was fine(2${\mu}{\textrm}{m}$), the formation of $\beta$-SiC was accelerated, thereby making the increase of the bending strength and the decrease of the water absorption, but no improvement for the tribological properties. Furthermore, in case that the particle size of the graphite powder was some large(88~149${\mu}{\textrm}{m}$), the formation of $\beta$-SiC was not accelerated, to thereby make the decrease of the bending strength and the increase of the water absorption, but the improvement for the tribological property of only the composite having the graphite powder of 20 vol%. In addition, in case that the particle size distribution of the graphite powder was large (under 53 ${\mu}{\textrm}{m}$), there was no improvement for every properties. However, the composites, which the graphite powder with the particle size of 53~88 ${\mu}{\textrm}{m}$ was added in 10~15 vol%, had the most increased resistance for the friction and wear which show the worn out amount of 0.4~0.6$\times$10-3 $\textrm{cm}^2$, and the value of the bending strength is 380~520 kg/$\textrm{cm}^2$.

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$\beta$-SiC Formation Mechanisms in Si Melt-C-SiC System (용융 Si-C-SiC계에서 $\beta$-SiC 생성기구)

  • 서기식;박상환;송휴섭
    • Journal of the Korean Ceramic Society
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    • v.36 no.6
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    • pp.655-661
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    • 1999
  • ${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

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Silicon Carbide Coating on Graphite and Isotropic C/C Composite by Chemical Vapour Reaction

  • Manocha, L.M.;Patel, Bharat;Manocha, S.
    • Carbon letters
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    • v.8 no.2
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    • pp.91-94
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    • 2007
  • The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of $450^{\circ}C$ or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency.

Parametric study of diamond/Ti thin film deposition in microwave plasma CVD (공정변수에 따른 microwave plasma CVD 다이아몬드/Ti 박막 증착 양상 조사)

  • Cho Hyun;Kim Jin Kon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.1
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    • pp.10-15
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    • 2005
  • Effects of CH₄/H₂ flow rate ratio, chuck bias and microwave power on the structural properties and particle densities of diamond thin films deposited on Ti substrates in microwave plasma CVD were examined. High quality diamond thin films were deposited on Ti substrates in 2∼3 CH₄ Vol.% conditions due to the preferential formation of sp³-bonus ana selective removal of sp²-bonus in the CH₄/H₂ mixtures, and the mechanism for the formation of diamond particles on Ti was analysed. Diamond particle density increased with increasing negative chuck bias to Ti substrate due to bias-enhanced nucleation of diamond and the threshold voltage was found at ∼-50 V. With increasing microwave power the evolution from micro-crystalline graphite layer to diamond layer was observed.

The Diameter Expansion of 6H-SiC Single Crystals by the Modification of Inner Guide Tube (새로운 가이드 튜브를 통한 6H-SiC 단결정의 직경 확장에 관한 연구)

  • Son, Chang-Hyun;Choi, Jung-Woo;Lee, Gi-Sub;Hwang, Hyun-Hee;Choi, Jong-Mun;Ku, Kap-Ryeol;Lee, Won-Jae;Shin, Byoung-Chul
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.795-800
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    • 2008
  • A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

A Study on the Preparation and Purification Characteristics of Graphene Oxide by Graphite Type (흑연 종류에 따른 산화 그래핀의 제조 및 정제를 통한 특성연구)

  • Jeong, Kyeom;Kim, Young-Ho
    • Clean Technology
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    • v.27 no.2
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    • pp.132-138
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    • 2021
  • Research is being conducted on graphene to provide graphene having both excellent physical as well as electrical properties in addition to unique physical properties. In this study, Hummer's method, which is a representative method for chemical exfoliation, was applied in order to investigate the possibility of the mass production of high-quality graphene oxide. Three types of graphite (graphite, crystalline graphite, and expanded graphite) were used in the preparation of graphene oxide with variations in the amount of potassium permanganate added, reaction temperature, and reaction time. Then a Fourier transform infrared spectroscopy (FT-IR), a Raman spectrometer, and a transmission electron microscope (TEM) were used to measure the quality of the prepared graphene oxide. Of the three types of graphite used in this experiment, crystalline graphite showed the highest quality. The prepared graphene oxide was then purified with an organic solvent, and an analysis conducted using energy dispersive X-ray spectroscopy (EDS). From the results of the residual values, we were able to confirm that both acid wastewater and wastewater were best purified using cyclohexane. The method for manufacturing graphene oxide as well as the method of purification using organic solvents that are presented in this study are expected to have less of an environmental impact, making them environmentally friendly. This makes them suitable for use in various industrial fields such as the film industry and for heat dissipation and as coating agents.