• Title/Summary/Keyword: Crystalline Size

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A Study of low cost and high efficiency Solar Cell using SOD(spin on doping) (SOD(Spin On Doping)법을 이용한 저가 고효율 태양전지에 관한 연구)

  • Park, Sung-Hyun;Kim, Kyoung-Hae;Mon, Sang-Il;Kim, Dae-Won;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1054-1056
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    • 2002
  • High temperature Kermal diffusion from $POCl_3$ source usually used for conventional process through put of a cell manufacturing line and potentially reduce cell efficiency through bulk like time degradation. To fabricate high efficiency solar cells with minimal thermal processing, spin-on-doping(SOD) technique can be employed to emitter diffusion of a silicon solar cell. A technique is presented to emitter doping of a mono-crystalline solar cell using spin-on doping (SOD). Moreover it is shown that the sheet resistance variation with RTA temperature and time fer mono-crystalline and multi-crystalline silicon samples. This novel SOD technique was successfully used to produces 11.3% efficiency l04mm by 104mm size mono-crystalline silicon solar cells.

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A Study on the Crystal Structure and Mechanical Properties of Isotactic Polypropylene (i-PP) Films (Isotactic Polypropylene (i-PP) film의 구조변화와 물성에 관한 연구)

  • Park, Myung-Soo;Kwon, Oh-Hyuk
    • Textile Coloration and Finishing
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    • v.9 no.6
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    • pp.18-25
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    • 1997
  • The change of crystalline structure and mechanical properties of i-PP films which had before isothermally annealed at various temperature and times have been studied. The following results were abtain The crystallinity and crystallite size of the samples showed increasing above the annealing temperature of 13$0^{\circ}C$ and these are equilibrated after an annealing time of 30min. When the crystalline form was at annealling condition were below 13$0^{\circ}C$, 2min, subsequently achieving an $\alpha$, $\beta$ mixing form and at 13$0^{\circ}C$, 10min, the crystalline form entered an $\alpha$ form transition. It is achieved a typical $\alpha$ form at 15$0^{\circ}C$. The value of T'm was increasing until 13$0^{\circ}C$ but it was not founded at 15$0^{\circ}C$. The slopes which represented crystalline form in an Avrami plot differed from each other within the range of this experiment.

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Synthesis and Characterization of SnO2 Nanoparticles by Hydrothermal Processing

  • Kim, Ho-Jung;Son, Jeong-Hun;Bae, Dong-Sik
    • Korean Journal of Materials Research
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    • v.21 no.8
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    • pp.415-418
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    • 2011
  • Tin (IV) dioxide ($SnO_2$) has attracted much attention due to its potential scientific significance and technological applications. $SnO_2$ nanoparticles were prepared under low temperature and pressure conditions via precipitation from a 0.1 M $SnCl_4{\cdot}5H_2O$ solution by slowly adding $NH_4OH$ while rapidly stirring the solution. $SnO_2$ nanoparticles were obtained from the reaction in the temperature range from 130 to $250^{\circ}C$ during 6 h. The microstructure and phase of the synthesized tin oxide particles were studied using XRD and TEM analyses. The average crystalline sizes of the synthesized $SnO_2$ particles were from 5 to 20 nm and they had a narrow distribution. The average crystalline size of the synthesized particles increased as the reaction temperature increased. The crystalline size of the synthesized tin oxide particles decreased with increases in the pH value. The X-ray analysis showed that the synthesized particles were crystalline, and the SAED patterns also indicate that the synthesized $SnO_2$ nanoparticles were crystalline. Furthermore, the morphology of the synthesized $SnO_2$ nanoparticles was as a function of the reaction temperature. The effects of the synthesis parameters, such as the pH condition and reaction temperature, are also discussed.

Recover of gypsum from waste plaster board and the refining process

  • Song, Young-Jun;Hiroki Yotsumoto
    • Proceedings of the IEEK Conference
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    • 2001.10a
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    • pp.342-348
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    • 2001
  • This study was conducted to obtain granular crystalline gypsum that can be used as raw material for plaster boards or cements from waste Plaster board. We could disintegrate preferentially gypsum to gypsum needle in 10${\mu}{\textrm}{m}$ or less size among the contents of waste plaster board (gypsum, paper, fiber, and inorganic material .etc.) by hydration afterwards the dehydration of crushed waste plaster board. In this case, the optimum conditions for minimizing the size of gypsum were dehydration rate of 75%~ 85%, hydration concentration of 10~20%, agitation speed of 250~400rpm, crushing size of 2cm or less. Gypsum of 98.21% grade was recovered with 99.0% yield from under screenings of 325mesh wet screening which followed by the dehydration-hydration process performed in the conditions of dehydration rate of 80%, hydration concentration of 15%, agitation speed of 300rpm, crushing size of 2cm or less. Subsequently, Plate-like Crystalline gypsum of is 151${\mu}{\textrm}{m}$ size and the grade of 99.49% with the Yield of 98.0% from the upper screenings of 270mesh wet screening carried out after the re-crystallization of the recovered gypsum needle slurry.

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Effects of Neutral Particle Beam on Nano-Crystalline Silicon Thin Film Deposited by Using Neutral Beam Assisted Chemical Vapor Deposition at Room Temperature

  • Lee, Dong-Hyeok;Jang, Jin-Nyoung;So, Hyun-Wook;Yoo, Suk-Jae;Lee, Bon-Ju;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.254-255
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    • 2012
  • Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

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A Novel Approach to Controlling CaCO3 Crystalline Assembly by Changing the Concentration of Poly(aspartic acid)

  • Zhou, Hongjian;Gao, Yanmin;Hwang, Sun-Gu;Lee, Dong-Yun;Park, Jung-Youn;Lee, Jae-Beom
    • Bulletin of the Korean Chemical Society
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    • v.32 no.11
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    • pp.4027-4034
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    • 2011
  • $CaCO_3$ crystalline structures having novel assemblies were in situ fabricated as analogs of naturally occurring proteins and polysaccharides for biomineralization. The calcite crystal was mineralized in a poly(vinyl alcohol)-$Ca^{2+}$ complex film immersed in a $Na_2CO_3$ solution containing poly(aspartic acid). The morphology and size of the $CaCO_3$ crystals were tuned by varying the concentration of poly(aspartic acid). The mechanisms of their nucleation orientation and formation were investigated experimentally and through molecular dynamics (MD) simulations in order to obtain a better understanding of the interactions between the polymers and the crystal at the molecular level. Both the MD results and experimental results indicate that the interaction between PVA and calcite mainly depends on the concentration of the polymer. The novel approach proposed herein for the fabrication of inorganic crystalline assembly structures can be used to fabricate precise crystalline structures.

Design Optimization of Hydrated Liquid Crystalline Vesicles Containing a High Content of Ceramide Using DOE (실험 계획법을 적용한 세라마이드 고함량의 수화 액정형 베시클의 최적설계)

  • Shin, Juyeong;Jin, Byung-Suk
    • Journal of the Korean Applied Science and Technology
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    • v.39 no.5
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    • pp.623-631
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    • 2022
  • Using the design of experiment (DOE), factors affecting the particle size of hydrated liquid crystalline vesicles containing a high content of ceramide were analyzed and the mixture composition was optimized. Manufacturing temperature, amount of ethanol, and ultrasonic time were selected as the main variables affecting the droplet size of the vesicles, and the effect of these variables on the droplet size was examined through the signal to noise (S/N) ratios of Taguchi method and ANOVA analysis. In addition, mixture composition experiments of three lipid components constituting the vesicle membrane, hydrogenated phosphatidyl choline (HPC), cholesterol (Chol), and ceramide (Cer), were performed according to the simplex central design matrix of the mixture. Regression analysis was conducted with the experimental data to obtain a model equation, and the optimal mixing composition of the three lipid components to minimize the vesicle droplet size was determined as HPC (0.6), Chol (0.1), and Cer (0.3).

Optimized for Low-temperature Sintering of TiO2 Paste with TTIP (TTIP를 이용한 저온소성용 TiO2 페이스트 최적화)

  • Jung, You-Ra;Jin, En Mei;Gu, Hal-Bon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.8
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    • pp.608-613
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    • 2013
  • In this paper, the low-temperature sintering of $TiO_2$ is approached to solve the problem of high temperature sintering which decreases the interconnection between particles or between substrate and particle. $TiO_2$ paste is prepared with Titanium (IV) isopropoxide as the precursor material and calcinate at different conditions (low temperature). In the results, since the changing of temperature and time of sintering, crystalline phase do not change and the intensities of anatase, rutile phase are higher. At $110^{\circ}C$, 7 h sintering condition, crystalline size of anatase and rutile phase are the smallest which are 13.07 and 17.47 nm, respectively. In addition, the highest zeta potential is about 32.77 mV and the repulsive force increases thus leading to the best of the dispersion characteristics between $TiO_2$ particles. Futhermore, DSSCs at that condition exhibits the highest efficiency with the values of $V_{oc}$, $J_{sc}$, FF and ${\eta}$ are 0.69 V, $8.60mA\;cm^{-2}$, 67.93% and 4.06%, respectively.

Liquid Crystalline Technology of Cosmetic Industry and Moisturizing Effect of Skin (화장품 산업의 액정기술과 피부보습효과)

  • 김인영;조춘구;유희창
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.30 no.2
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    • pp.279-294
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    • 2004
  • This study described about a liquid crystalline technology that is used in cosmetics industry. Various intermediate phases may exist between solid and liquid. At high surfactant concentration, several liquid crystalline phases can be made to have formed. Although molecular arrangement with crystallization is not regular, it is known that more relative regular state is liquid crystalline or meso-phase than liquid phase. Usually, it described in detail about manufacturing method that explained about a kind of liquid crystalline technology in cosmetics, a new liquid crystalline technology, and makes liquid crystalline. Specialty, it introduced about kind of special an emulsifier to form liquid crystalline. There were hydrogenated lecithin, ceramide, dipalmitoylhydroxyproline, DEA-cetyl phosphate, Gemini-surfactant in representative raw material to form liquid crystalline. Liquid crystalline extent that used polarization microscope to observe formation, and appears best from 400times, 600times, 1,000times well appeared. Also, droplet particle size that liquid crystal is made best 1.0-10.0$\mu\textrm{m}$ be. General emulsion more than superior result that measures the skin moisturizing effect to take advantage of liquid crystalline technology of vitamin was seen. As presence at a clinical result, wave and general emulsion more than superior result (more than 20%) that measures skin moisturizing effect about liquid crystalline of vitamin B$\_$5/ were seen (ANOMA t-test, p<0.05)

Preparation and Crystalline Growth Properties of Diamond Thin Film by Microwave Plasma CVD (MWPCVD법에 의한 다이아몬드 박막의 제조 및 결정성장 특성)

  • ;;A. Fujishima
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.905-908
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    • 2000
  • The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

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