• Applied Science and Convergence Technology
• /
• v.24 no.6
• /
• pp.268-272
• /
• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.2
• /
• pp.74-79
• /
• 2018

To increase corrosion resistance of Mg alloy, AZ31 and AZ91 were PEO treated with different applied voltage and time conditions. We used Na-P and Na-Si system electrolyte. Crystalline phase and morphology were investigated. MgO was Most common crystal phase and vitreous phase could be found. Crystalline phase of $Na_{3.59}Mg_{2.71}(PO_4)_3$ and $Mg_2SiO_4$ also could be found. Porosity of oxidized surface tends to decrease with increasing PEO applied voltage, treat time and concentration of electrolyte, after then, size of pore increased and total number of pore decreased, distinctly.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.27 no.1
• /
• pp.34-41
• /
• 2017

In this study, the effect on the zinc nuclei crystallization caused by changes preprocessing of the zinc crystalline glaze preparation has been studied. The mechanism of the nuclei formation in the crystalline glaze and development of the nuclei by studying the preprocessing step was explained. The preprocessing step was improved by altering mixing process of the materials prior to sintering: number of sieving dispersion process and ultra-sonication prove tests with various duration of sonication. According to the result, the sieving and sonication of the starting materials facilitated the interface reactions of $ZnO-SiO_2$ from $680^{\circ}C$ where low temperature willemite is formulated, and altered Si bonding for the easier bonding between Zn-Si. In other words, solely sieving was enough to accelerate the formation of willemite in low temperature. When the particles were distributed evenly by sonication, the willemite formation was even more significant.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.9
• /
• pp.2830-2844
• /
• 2012

This review covers recent developments in our group regarding the synthesis, characterization and applications of single-crystalline one-dimensional nanostructures based on a wide range of material systems including noble metals, metal silicides and metal germanides. For the single-crystalline one-dimensional nanostructures growth, we have employed chemical vapor transport approach without using any catalysts, capping reagents, and templates because of its simplicity and wide applicability. Au, Pd, and Pt nanowires are epitaxially grown on various substrates, in which the nanowires grow from seed crystals by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. We also present the synthesis of numerous metal silicide and germanide 1D nanostructures. By simply varying reaction conditions, furthermore, nanowires of metastable phase, such as $Fe_5Si_3$ and $Co_3Si$, and composition tuned cobalt silicides (CoSi, $Co_2Si$, $Co_3Si$) and iron germanides ($Fe_{1.3}Ge$ and $Fe_3Ge$) nanowires are synthesized. Such developments can be utilized as advanced platforms or building blocks for a wide range of applications such as plasmonics, sensings, nanoelectronics, and spintronics.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.4
• /
• pp.156-159
• /
• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.1
• /
• pp.57-61
• /
• 2011

To develop high efficiency crystalline solar cells, the rear surface passivation is very important. In this paper, $Al_2O_3$ films deposited by thermal ALD(atomic layer deposition) method were studied for rear surface passivation of crystalline solar cells and their passivation properties were evaluated. After the deposition of $Al_2O_3$ films on p-type Si wafers, the lifetime was increased very much due to the reduction of interface state density and the field effects of the negative fixed charge in the films. Also, optimum annealing condition and effects of SiNx capping layer were investigated. The best lifetime was obtained when the films were annealed at $400^{\circ}C$ for 15min. And the lifetime degradation of the $Al_2O_3$ films with SiNx capping layers was improved compared to those without the capping layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.165-169
• /
• 2001

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with and without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increase of a crystallite size in the films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. Many crystalline grains were observed in the morphology of the deposited films by scanning electron microscopy. In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.2
• /
• pp.97-100
• /
• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• Journal of the Korean institute of surface engineering
• /
• v.43 no.6
• /
• pp.255-259
• /
• 2010

In this work, Ni-Co composites incorporated with nano-sized SiC particles in the range of 45-55 nm are prepared by electroplating. The effects of plating duration on the chemical composition, surface morphology, crystalline structures and hardness have been studied. The maximum hardness of Ni-Co-SiC composite coating is approximately 633 Hv at plating duration of 1 h. The hardness is gradually decreased with increasing plating duration, which can be attributed to the growth of crystalline size and the agglomerates of SiC nano-particles. It is therefore explained that the grain refinement of Ni-Co matrix and stable dispersion of SiC particles play an important role for strengthening, which indicate Hall-Petch relation and Orowan model were dominant for hardening of Ni-Co-SiC composite coatings.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.221-222
• /
• 2008

In Crystalline Si solar cells, Anti-Reflection Coating is contribute to improvement in energy conversion efficiency due to decrease of optical loss and recombination owing to surface passivation. Porous Si is formed electrochemical etching that uses chemical solution and anodization etching. So It gives that advantage in rapid process time and without high cost equipment. In this paper, We compare Porous Si with $SiO_2$/SiNx ARC and analyze that by anti-reflection coating.