• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.47-51
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• 2013

Current research trends of solar cells has focused on the high conversion efficiency and low-cost production technology. Passivation technology that can be easily adapted to mass production. Therefore, this study conducted experiments with aim of the following two methods for the fabrication of high-efficiency crystalline silicon solar cells. In the first task, an attempt is formation of local Al-BSF to a number of locally doped dots to increase the conversion efficiency of solar cells to reduce the loss of $V_{oc}$ overcome. The second major task, rear surface apply in $Al_2O_3/SiN_x$ stack layer, $Al_2O_3$ prominent negative fixed charge characteristics. As the result of task, Local Al-BSF and $Al_2O_3/SiN_x$ stack layer applied to the p-type single crystalline silicon solar cells, the average $V_{oc}$ of 644mV, $I_{sc}$ of 918mV and conversion efficiency of 18.70% were obtained.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.77-79
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• 2009

Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H (p)/c-Si(n)/a-Si:H(n)/Al, are investigated. The influence of various parameters for the front structures was studied. We used thin (10 nm) a-Si:H(p) layers of amorphous hydrogenated silicon are deposited on top of a thick ($500{\mu}m$) crystalline c-Si wafer. This work deals with the influence of the a-Si:H(p) doping concentration on the solar cell performance is studied.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.

• 전자공학회논문지A
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• 제28A권10호
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• pp.814-820
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• 1991

TaSi$_2$ was formed by rapid thermal annealing(RTA) on BF$_2$ doped single crystalline silicon substrates. The formation and various properties of TaSi$_2$ have been investigated by using 4-point probe, HP414, XRD, and SEM. And the redistribution of boron with RTA has been observed by SIMS. Implanted boron was diffused out into the TaSi$_2$ for RTA temperature but did not significantly affect the formation temperature of TaSi$_2$. Also, the contact resistance for TaSi$_2$/p$^{+}$ region had a low value 22$\Omega$, at contact size of 0.9$\mu$m, and the native oxide formed on Si-substrates by BF$_2$ implantation retarded the formation of TaSi$_2$.

• 한국결정성장학회지
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• 제12권3호
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• pp.120-125
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• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• 분석과학
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• 제25권1호
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• pp.3-6
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• 2012

내구성 및 내알칼리성이 우수한 다공성 결정화 유리를 제조하기 위하여, zirconium propoxide의 몰농도비가 높은 금속알콕사이드를 출발물질로 하여 $xZrO_2-(1-x)SiO_2$ 구조의 유리전구체를 졸-겔법으로 합성하였다. 본 연구에서는 유리전구체를 500에서 $1,100^{\circ}C$의 범위에서 열처리하여, 열처리 조건이 유리전구체의 결정구조에 미치는 영향을 조사하였다. X-선 회절분석에 의하면, $600^{\circ}C$이상에서 결정피크가 발달하기 시작하였으며, 850$^{\circ}C$이상에 도달하면, 결정성은 확연하게 증가하였다. 그리고 열처리 온도가 증가함에 따라 결정 피크가 발달하며 $2{\theta}$ 값이 $35^{\circ}$, $50^{\circ}$ 및 $60^{\circ}$에서 각각 baddelyite, tetragonal-$ZrO_2$, zircon의 특성피크를 나타냈다.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.7-11
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• 2012

SiNx films have been wildly used as anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, the SiNx films were deposited by using high frequency (13.56MHz) PECVD and optical & passivation properties were investigated. The RF power was changed in a certain range for the film deposition. Then, the refractive index, etch rate, minority carrier lifetime and cell efficiency were measured to study the properties of the film respectively. The optimal deposition conditions for application to crystalline silicon solar cells were proposed as results of the study. Finally, the best cell efficiency of 16.98% was obtained from the solar cell with the SiNx films deposited by RF power of 550W.

• 센서학회지
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• 제22권3호
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• 한국세라믹학회지
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• 제25권5호
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• pp.431-436
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• 1988

The properties of scid-resistance to boiling HCl, thermal expansion coefficient and softening temperature of mother glass and glass-ceramic of LAS systems were investigated at the contents of SiO2 varing from 57 to 67wt%. The nucleation and growth of crystalline phase of LAS compositions were carried out at 50$0^{\circ}C$ and $700^{\circ}C$. The crystalline phase jconsists of lithium alumino silicate, lithum meta silicate, lithium disilicate, $\alpha$-crystobalite and $\alpha$-quartz. Lithium alumino silicate(virgilite) is the major crystalline phase in the glass ceramics. The degree of acid resistant property was increased in proportion with the silica content for both glass and ceramics. Glass-ceramic gives lower acid-resistance and thermal expansion coefficient while softening temperature shows higher for glass-ceramic than for mother glass.