• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.905-908
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• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.1-11
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• 2018

Current major photovoltaic (PV) market share (> 60%) is being occupied by the multicrystalline (mc)-silicon solar cells despite of low efficiency compared to single crystalline silicon solar cells. The diamond wire sawing technology reduces the production cost of crystalline silicon solar cells, it increases the optical loss for the existing mc-silicon solar cells and hence its efficiency is low in the current mass production line. To overcome the optical loss in the mc-crystalline silicon, caused by the diamond wire sawing, next generation texturing process is being investigated by various research groups for the PV industry. In this review, the limitation of surface structure and optical loss due to the reflectivity of conventional mc-silicon solar cells are explained by the typical texturing mechanism. Various texturing technologies that could minimize the optical loss of mc-silicon solar cells are explained. Finally, next generation texturing technology to survive in the fierce cost competition of photovoltaic market is discussed.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.10-15
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• 2013

In order to fabricate high sensitive and stable biosensors, we require the material with superior biocompatibility and physical-chemical stability. Many kinds of biomaterials have been evaluated to apply for bioindustry. Recently, carbon based diamond thin films have been focal pointed as bio-applications and their possibility has been evaluated. Diamond thin film has many advantages for electrochemical and biological applications, such as wide potential window (3.0-3.5V), low background current and chemical-physical stability. In this work, we have cultured neuroblastoma cell (SH-SY5Y) on the crystalline diamond films. We use MTT assay to evaluate the characteristic of cell culture on the substrates. As a result, neuroblastoma cell was cultured on the crystalline diamond film as similar as cell culture dish.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.171-174
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• 2016

The diamond wire sawing method to produce silicon wafers for the photovoltaic application is still a new and highly investigated wafering technology. This technology, featured as the higher productivity, lower wear of the wire, and easier recycling of the coolant, is expected to become the mainstream technique for slicing the silicon crystals. However, the saw marks on the wafer surface have to be investigated and improved. This paper discusses the removal of saw marks on diamond wire-sawn single crystalline silicon wafer. With a pretreatment step using tetramethyl ammonium hydroxide ($(CH_3)_4NOH$, TMAH) and conventional texturing process with KOH solution (1 % KOH, 8 % IPA, and DI water), the saw marks on the surface of the diamond wire-sawn silicon wafers can be effectively removed and they are invisible to naked eyes completely.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.87-87
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• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.10-15
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• 2005

Effects of CH₄/H₂ flow rate ratio, chuck bias and microwave power on the structural properties and particle densities of diamond thin films deposited on Ti substrates in microwave plasma CVD were examined. High quality diamond thin films were deposited on Ti substrates in 2∼3 CH₄ Vol.% conditions due to the preferential formation of sp³-bonus ana selective removal of sp²-bonus in the CH₄/H₂ mixtures, and the mechanism for the formation of diamond particles on Ti was analysed. Diamond particle density increased with increasing negative chuck bias to Ti substrate due to bias-enhanced nucleation of diamond and the threshold voltage was found at ∼-50 V. With increasing microwave power the evolution from micro-crystalline graphite layer to diamond layer was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.19-27
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• 2003

Morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723K by means of electron beam evaporation using MgO powder source. Atomic force microscopy images indicated that the film grown at RT without $O_2$ supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without $O_2$ has the closest composition to the stoichiometric MgO, and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively. These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.43-48
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• 1999

Using microwave plasma-enhanced chemical vapor deposition, diamond films were successfully grown on Ti-coated glass substrates at temperatures as low as around 500$^{\circ}C$ in behalf of practical applications to field emitters. Electron emission was observed at turn-on fields below 18V-$\mu\textrm{m}$. Field emission characteristics of diamond films were discussed in terms of their crystalline qualities. diamond films with poorer crystalline qualities showed better field emission properties.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.200-203
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• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.