• 한국결정성장학회지
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• 제9권5호
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• pp.463-469
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• 1999

$K_3$$Li_2$$Nb_5$$O_{15}$KLN) 단결정을 $K_x$$Li_{1-x}$$NbO_3$의 조성에서 x= 0.04~0.6으로 결정성장방법으로 성장시켰다. 균열이 없는 양질의 결정성장을 위해 c축 및 a축 방향을 택하였고, 단결정 성장을 위한 최적의 조건에 대하여 연구하였다. 성장된 결정은 편광현미경 관찰을 통해 일축성 무늬를 볼수 있었고, X-선 회절실험에서 결정된 격자상수는 a=b=12.500 $\AA$, c=3.996$\AA$이었으며, 1HF : $2HNO_3$ 용액의 부식에서 c축 방향으로 정사각형 및 a축 방향으로 직사각형의 부식상을 볼수 있었다. 광투과율 측정과 온도에 따른 유전상수 측정등을 통해 KLN 결정의 광학적 특성 및 다른 조성을 갖는 시료에서 유전특성을 조사하였다. $420^{\circ}C$에서 상전이 온도를 갖는 결정은 확산상전이(diffuse phase transition) 특성을 갖는 반면 $493^{\circ}C$에서 상전이 온도를 보이는 결정은 날카로운(shap) 유전특성을 나타내었다.

• 한국결정성장학회지
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• 제13권1호
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• pp.24-30
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• 2003

The preparation of $PbTiO_3$ powder was carried out using the oxide starting material by hydrothermal method. The powder of a crystalline phase with perovskite structure was synthesized. The optimum conditions for the preparation of powder were as follows; hydrothermal solvent; 8M-KOH or 8M-NaOH, reaction temperature; 250~$270^{\circ}C$, run time; 10 h. The ,shape of synthesized powders were well developed crystalline faces with specific surface area of about 2.3 $\textrm m^2$/g in KOH solution and about 5.0 $\textrm m^2$/g in NaOH solution. The cell parameters of powder were a = 3.90$\AA$, c = 4.14 $\AA$ and cell volume was 57.30 $\AA^3$. The cell ratio (c/a) of powder was the same as the theoretical ratio with c/a = 1.06 and the phase transition temperature(Tc) of the powders was about $470^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.49-51
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• 2009

Photonic crystal is a dielectric materials or a set of different dielectric materials with periodic structure of refractive index. Line defect obtained by leaving out a row of rod along the $\Gamma$-X direction. We showed the change of group velocity in waveguide mode and found a small group velocity. Characteristic of the small group velocity described by electric field distribution. As the phase variation, small group velocity confirmed from positive to negative.

• 한국인쇄학회지
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• 제13권1호
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• pp.93-104
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• 1995

Liquid crystal-polymer composite(LCPC) films promising new materials for both projection displays and vision product. LCPC films consist of a continous liquid crystal phase embedded in a three- dimensional network of polymer matrix. The liquid crystal in these LC phases can be elecrtrically switched giving rise to an opaque scattering off-stats and a transparent, non-scatting on- stats. In this work. a premixture is composed of LC, UV-curable monomer and photonitiator. LCPC films are formed by photopolymerization induced phase separation from this premixture. In conclusion, structure and electro-optical properties of LCPC films strongly depends on the selection of monomer, LC content and curing rate.

• 한국자기공명학회논문지
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• 제17권1호
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• pp.19-23
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• 2013

The temperature dependences of the NMR spectrum and the spin-lattice relaxation times in $KH_2PO_4$ were investigated via single-crystal NMR and MAS NMR. The stretched-exponential relaxation that occurred because of the distribution of correlation times was indicative of the degree of the distribution of the double-well potential on the hydrogen bond. The behaviors responsible for the strong temperature dependences of the $^1H$ and $^{31}P$ spin-lattice relaxation times in the rotating frame $T_{1{\rho}}$ in $KH_2PO_4$ are likely related to the reorientational motion of the hydrogen-bond geometry and the $PO_4$ tetrahedral distortion.

• 한국결정성장학회지
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• 제11권3호
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• pp.106-111
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• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.227-250
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• 1999

The reproducibility of successive growth of Bi12TiO20(BTO) single crystals using a top-seeded solution growth (TSSG) pulling method was evaluated by measuring the lattice constants and their standard deviations. A substantial phase diagram in the region close to the stoichiometric BTO was established experimentally for this purpose, and the existence of a retrograde solid solution close to a BTO was clarified. It was emphasize that a starting solution, with a 10.0~10.1 mol% TiO2 concentration, results in large single crystals with a highly homogeneous lattice constant of within $\pm$1x10-4$\AA$, when the solidified fraction of the grown crystal is less than about 45%. A wavelength dispersion of refractive index was measured for the first time, an it was verified that the refractive index of BTO is larger than that of BSO(Bi12TiO20), allowing the voltage sensitivity of EOS higher than the case with BSO as a probe head.

• 한국결정성장학회지
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• 제6권2호
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• pp.254-262
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• 1996

수열합성법을 이용하여 $1~3\;\mu\textrm{m}$의 입자 크기를 갖는 균일한 $Pb(Zr_{0.52}Ti_{0.48})O_{3}$ (PZT)분말을 제조하였다. 출발물질의 종류에 따라 반응조건이 다소 차이를 보였지만, 일반적으로 10 M의 KOH를 광화제로 사용하여, $180^{\circ}C$ 이상에서 2시간 동안 반응시켜 PZT 분말을 합성 할 수 있었다. 또한, 광화제의 농도, 수열반응 온도, 그리고 반응시간이 증가할수록 균일상의 분말이 형성됨을 보였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1496-1499
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• 2001

Optical and electrical properties of the $In_2Se_3$ single crystals grown by use of the Bridgman technique were examined in the transition temperature range between $\alpha$-phase and $\beta$-phase. $In_2Se_3$ single crystal has the rhombohedral structure and lattice constants are a=4.025 $\AA$, c=28.771 $\AA$ in C-axis. The transition temperatures of the stoichiometric $In_2Se_3$ single crystal is $10^{-2}{\Omega}cm^{-1}$ according to the specimens. However it varies rapidly in the transition region.

• 한국결정성장학회지
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• 제4권2호
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• pp.131-133
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• 1994

$[0.5 \mu\textrm{m} (100) Si/(1102) sapphire]$ 기판상에 액상 에피탁시 방법으로 태양전지용 실리콘 박막형성을 시도하여, 평균 14 $\mu\textrm{m}$ 두께의 실리콘 박막을 아주 낮은 온도범위 $(380^{\circ}C~460^{\circ}C)$에서 성장시켰다.