• Journal of the Mineralogical Society of Korea
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• v.13 no.3
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• pp.164-170
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• 2000

Neutron single crystal and powder diffraction techniques have been applied to the structure analysis of yttria-stabilized zirconium, Z $r_{0.73}$ $Y_{0.27}$ $O_{1.87}$., prepared by the skull-melting method. The crystal structure has been determined to be cubic symmetry, space group Fm/equation omitted/ with a=5.155(2)$\AA$, V=136.99(5)$\AA$, Z=4, and R(F)=5.65%, $\omega$R(I)=10.57% for 70 integrated intensities of Bragg Peaks observed from single crystal of Z $r_{0.73}$ $Y_{0.27}$ $O_{1.87}$. The stabilizer atoms randomly occupy the zirconium sites and there are displacements of oxygen atoms with amplitudes of $\Delta$/a~0.033 and 0.11 along <110> and <100> directions from the ideal positions of the fluorite structure, respectively. There are no significant differences in crystallographic data between the single crystal and powder studies. Diffraction pattern after Rietveld refinement, using neutron powder data, has shown the evidence of a tetragonal impurity phase, or a slight tetragonal distortion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.138-147
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• 2001

The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.131-139
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• 1998

$CdS_{0.67}Se_{0.33}$ single crystal was grown by vertical sublimation method of closed tube physical vapour deposition. The (0001) growth plane of oriented single crystals was confirmed from the back-ref1ection Laue patterns. From the Hall effects by van der Pauw method, the as-grown $CdS_{0.67}Se_{0.33}$ single crystals were found to be n-type semiconductors. The mobility appeared to be decreased by lattice scattering at temperature range from 150K to 293K and by impurity scattering at temperatures ranging from 30K to 150K In order to explore its applicability in photoconductive cells, we measured the ratio of photo-current to dark-current (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time respectively. The results indicated that for the samples annealed in Cu vapour the photoconductive characteristics are best. We obtained sensitivity of 0.99, the value of pc/de of $1.84{\times}10^{7}$, the MAPD of 323mW and the rise and decay time of 9.3 ms and 9.7 ms, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.4
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• pp.131-135
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• 2020

Single crystal phased CaZrO₃ : Eu³⁺ phosphor have been synthesized by skull melting method. The crystal structure, morphology and optical properties of synthesized phosphor were investigated XRD (X-ray diffraction), SEM (scanning electron microscopy), UV (ultraviolet) fluorescence reaction and PL (photo luminescence). The starting materials having chemical composition of CaO: ZrO₂ : Eu₂O₃= 0.962 : 1.013 : 0.025 mol% were charged into a cold crucible. The cold crucible was 120 mm in inner diameter and 150 mm in inner height, and 3 kg of mixed powder (CaO, ZrO₂ and Eu₂O₃) was completely melted within 1 hour at an oscillation frequency of 3.4 MHz, maintained in the molten state for 2 hours, and finally air-cooled. The XRD results show that synthesized phosphor is stabilized in orthorhombic perovskite structure without any impurity phases. The synthesized phosphor could be excited by UV light (254 or 365 nm) and the emission spectra results indicated that bright red luminescence of CaZrO₃ : Eu³⁺ due to magnetic dipole transition ⁵D₀→⁷F₂ at 615 nm was dominant.

• Korean Chemical Engineering Research
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• v.51 no.5
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• pp.587-590
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• 2013

Solid-liquid equilibria for mixtures composed of n-vinyl-2-pyrrolidone (NVP) and 2-pyrrolidone were measured as a basic study for the melt crystallization process to remove 2-pyrrolidone as impurity included in NVP. A differential scanning calorimeter (DSC) and a crystallizer were used and the experimental results obtained from two methods were similar. The mixture showed a eutectic system which has a single composition at the minimum melting temperature. Calculation results from simple thermodynamic equations were found in general agreements with present data. To determine the growth rate of NVP crystal which is important for the design of crystallization process, thicknesses of the crystal were measured with the time using a layer melt crystallizer. The growth rates increased as cooling temperatures decreased. Heat transfer coefficient correlated from present data was found to successfully describe the crystal growth behavior.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.171-175
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• 2003

Electron paramagnetic resonance (EPR) of Fe$^{3+}$ in LiTaO$_3$ single crystal, grown by Czochralski method, has been studied by employing an X-band spectrometer. Resonance spectra of Fe$^{3+}$ ion on the crystallographic principal axes were obtained with 9.447 ㎓ at room temperature. The spectroscopic splitting parameter g and zero-field splitting (ZFS) parameter D (= 3 B$_{2}$sup 0/) are calculated with effective spin Hamiltonian. Fe$^{3+}$ center in stoichometric single crystal turns out to be different with that in congruent single crystal reported previously. From the analysis of temperature dependence of resonance fields for Fe$^{3+}$ ion, there is no any phase transition at the temperature range (from -160 $^{\circ}C$ to 20 $^{\circ}C$).

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.195-201
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• 1997

The present paper describes the effect of dry mixed grinding on kaolinite-aluminum trihydroxide mixture with a planetary ball mill before sintering and its influence on mullite formation during sintering. The size reduction of the mixture is market in the early stage of grinding and the obtained fine particles agglomerate subsequently with an increase of grinding time. The crystal structure of the mixture is collapsed easily into an amorphous one by planetary ball milling, of which amount increases with an increase of grinding time. Only mullite phase except for anatase as an inherent impurity in kaolinite appeared in the sintered body of the mixtures with mixed grinding as relatively lower temperature 1523K, while corundum, cristobalite, and Al-Si spinel phases, besides mullite were formed in the sintered body of the mixture without mixed grinding. Therefore, the mixed grinding treatment is very effective to improve the homogeneous mixing and disp-ersion of the mixture of raw materials on a micro scale and to decrease the thermal decomposition tem-perature by crystal structure change of them so as to obatin direct preparation of mullite with high purity at relatively low temperature.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.813-819
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• 1999

Inner crack-like pores with controlled amount of Ca impurity level in the high purity alumina single crystal sapphire had been created by micro-fabrication technique which includes ion implantation photo-lithography Ar ion milling and hot press technique. The morphological change and the healing of crack-like pore in the Ca doped high purity single crystal alumina during high temperature heat treatment in vacuum were observed using optical microscopy. The hexagonal bridging ligaments were developed and the size of hexagonal bridging ligaments had been increased with temperature and Ca amount and had grown to their corner rounded. It appeared that the hexagonal bridging ligaments would have an equilbrium size with temperature and the amount of Ca addition. Three kinds of crack-like pore healing type were observed. Edge regression and ligament growth were observed from relatively low temperature in the crack-like pore. Edge regression were found in almost all of the crack-like pore but the ligament growth were found only in the several crack-like pores accelerating heating very fast. Flow type healing was observed above $1800^{\circ}C$ and It healed the crack-like pore very slowly.

• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.208-213
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• 2011

We calculated the EPR (electron paramagnetic resonance) line-shape function. The line-widths of a -doped single crystal was studied as a function of the temperature with 0.5 and 2 at. at a frequency of (X-band). The line-width decreases with increasing temperature, such temperature behavior of the line-width can indicate a motional narrowing of the spectrum, when impurity ions substitute for host ions in an off-center position, and thus there can be fast jumping of dipoles between several symmetrically equivalent configurations. Therefore, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition problems.

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.45-49
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• 2016

Ground state energy levels of $Gd^{3+}$ ion (effective spin S = 7/2) in $PbWO_4$ single crystal doped with $Gd^{3+}$ paramagnetic impurity at tetragonal symmetry are calculated with spectroscopic splitting parameters and zero field splitting parameters using by effective spin Hamiltonian. It turns out that the zero field splitting energies of $Gd^{3+}$ ion were the same regardless of the directions of $PbWO_4$ : Gd single crystal. The calculated energy differences for ${\mid{\pm}7/2}$ > ${\leftrightarrow}{\mid{\pm}5/2}$ >, ${\mid{\pm}5/2}$ > ${\leftrightarrow}{\mid{\pm}3/2}$ >, and ${\mid{\pm}3/2}$ > ${\leftrightarrow}{\mid{\pm}1/2}$ > transitions were 6.9574 GHz, 6.9219 GHz, and 15.8704 GHz, respectively when the applied magnetic field is zero. The calculated energy level diagrams were different for different directions of applied magnetic field. For B // a- and c-axis, the energy level diagrams are calculated and discussed.