• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.212-217
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• 2013

Ultra hard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) magnetron sputtering techniques. The effects of ICP power, ranging from 0 to 300 W, on the coating microstructure, crystallographic, and mechanical properties were systematically investigated with FE-SEM, AFM, HR-XRD and nanoindentation. The results show that ICP power has a significant influence on the coating microstructure and mechanical properties of TiN coatings. With an increasing ICP power, the film microstructure evolves from an apparent columnar structure to a highly dense one. Grain sizes of TiN coatings decreased from 12.6 nm to 8.7 nm with an increase of the ICP power. A maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at an ICP power of 300 W. The crystal structure and preferred orientation in the TiN coatings also varied with the ICP power, exerting an effective influence on film nanohardness.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.172-177
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• 2002

The CuZnAl alloys have some advantages against other shape memory alloys, such as the widely variable transformation temperature, the low cost and easy fabrication. The alloys have been produced mostly by metallurgical methods. Thereby a tendency to large grain sizes is observed, which causes brittle properties of the materials. In order to avoid these deficiencies a special powder metallurgical process, SPS(spark plasma sintering), is applied in the present investigation. The starting materials were the pure (99.9 %) Cu, Zn and Al element powders with different particle size. The relatively fine grained and homogeneous Cu-24.78Zn-9.11Al (at.%) and Cu-13.22Zn-17.24Al (at.%) shape memory alloys were obtained using the powders with size of 75-150 $\mu$m. The average grain size is about 70 $\mu$m and the phases at room temperature are the austenitic and martensitic phase respectively.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.126-133
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• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.50-53
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• 2019

In this study, polycrystalline silicon thin film useful for the solar cells was fabricated by AIC(Aluminum Induced Crystallization) process. A diffusing barrier for this process is prepared with $Al_2O_3$. For the maximization of the grain size of the polycrystalline silicon, a selective blasting of the $Al_2O_3$ diffusing barrier was conducted before annealing treatment. The heat treatment for the activation of the amorphous-Si (a-Si) layer was carried out with Rapid Thermal Annealing (RTA) process. Crystallization of the a-Si layer was analyzed with XRD. It was confirmed that a-Si was crystallized at $500^{\circ}C$ and the silicon crystal is observed to be formed and the grain size of the polycrystalline silicon was observed to be $15.9{\mu}m$.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.371-383
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• 2009

Crystallinity and textural relations, which are crucial in terms of the quality concept of high-purity limestone, have not been effectively applicable to the limestone evaluation as crude ore due to the difficulties in precise measurements. To overcome the above, as a new method of ore characterization, a measurement of shape factor and grain boundary frequency utilizing the image analysing system was adopted in this study. Some domestic limestones used for lime manufacturing were investigated by such a quality evaluation method, and its results are discussed and correlated each other samples. As the result, even though calcite contents of crude ore, i.e., limestone grade and its crystal size are similar, quality of manufactured lime is remarkably different depending on the degree of shape factor and grain boundary frequency. In other words, as the more irregular in crystal shape and the higher the grain boundary frequency, the manufactured quick lime became more superior in all terms of lime quality such as rate of calcination, porosity, reactivity, sintering and decrepitation effect. However, because the quick lime become easily overheated in case of relatively higher degree in shape factor and grain boundary effect, a technology minimizing heating time is necessary for the manufacturing of high quality lime. In limestone industry, such a ore characterization method will be much more reasonable than the conventional method by measurement of mean size, because the method may collectively comprise crystal shape and other textural factors which can not be numerically evaluated in the past.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.343-349
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• 2020

NKN [(Na,K)NbO₃] is a candidate lead-free piezoelectric material to replace PZT [Pb(Zr,Ti)O₃]. A single crystal has excellent piezoelectric-properties and its properties are dependent of the crystal orientation direction. However, it is hard to fabricate a single crystal with stoichiometrically stable composition due to volatilization of sodium during the growth process. To solve this problem, a solid solution composition is designed (Na,K)NbO₃-Ba(Cu,Nb)O₃ and solid state grain growth is studied for a sizable single crystal. Ceramic powders of (Na,K)NbO₃-M(Cu,Nb)O₃ (M = Ca, Sr, Ba) are synthesized and grain growth behavior is investigated for different temperatures and times. Average normal grain sizes of individual specimens, which are heat-treated at 1,125 ℃ for 10 h, are 6.9, 2.8, and 1.6 ㎛ for M = Ca, Sr, and Ba, respectively. Depending on M, the distortion of NKN structure can be altered. XRD results show that (NKN-CaCuN: shrunken orthorhombic; NKN-SrCuN: orthorhombic; NKN-BaCuN: cubic). For the sample heat-treated at 1,125 ℃ for 10 h, the maximum grain sizes of individual specimens are measured as 40, 5, and 4,000 ㎛ for M = Ca, Sr, and Ba, respectively. This abnormal grain size is related to the partial melting temperature (NKN-CaCuN: 960 ℃; NKN-SrCuN: 971 ℃; NKN-BaCuN: 945 ℃).

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.488-492
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• 2002

Magnetic properties of nanostructured materials are affected in complicated manner by their microstructure such as grain size, internal strain and crystal structure. Thus, studies on the synthesis of nanostructured materials with controlled microstructure are necessary for a significant improvement in magnetic properties. It is well known that when Fe-Co alloy undergoes ordering transformation, soft magnetic properties could be obtained. There are many reports that the magnetic properties of the materials can be changed with variation of grain size. In the present work, nanostructured Fe-50at.%Co alloy powder produced by hydrogen reduction process (HRP) starting with two oxide powder mixtures of $Fe_2O_3\;and\; Co_3O_4$. The mean grain size of the HRP powders was about 40 nm and coercivity of the: powders was about 43 Oe.

• Journal of Photoscience
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• v.3 no.3
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• pp.159-161
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• 1996

Photosensitivity of silver halide emulsion depends on the properties of the microcrystals. Size, shape, grain distribution and chemical composition as well as the inner structure or the topography of the latent image specks affect on the optical properties and play an important role in the photographic process. In the present paper, a study on the sensitization of emulsion containing AgBrClI core/shell grains showed that for the given size, shape, halide content and crystal habit, under the optimal conditions the photosensitivity of the heterojunction type grains are different from that of the common regular grains. The optimal photosensitivity was obtained at the iodide content of 2.0 mo1%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.60-66
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• 2001

($Ba_x$$Sr_{1-x}$)$TiO_3$ (x=0.9, 0.7, 0.5) thin films were prepared on ITO-coated glass by sol-gel method. Perovskite phase formation temperature of BST thin films seemed to be higher than $600^{\circ}C$. Peaks of perovskite phase shift to high diffraction angles as the Sr/(Ba+Sr) ratio was increased, due to the smaller ionic size of $Sr^{2+}$ than $Ba^{2+}$ . As a heating temperature was increased, the grain became coarser. And as Sr/(Ba + Sr) ratio was increased, the grain became finer. Dielectric constants of the BST(50/50) thin film are higher and dielectric losses of that are lower than those of the others. Dielectric constant and dielectric loss of the BST(50/50) thin film were 652 and 0.042 at 1kHz, respectively.