• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.74-75
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.380-380
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• 2010

The chalcopyrite $ZnIn_2S_4$ epilayers were grown on the GaAs substrate by using a hot-wall epitaxy (HWE) method. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2S_4$ have been estimated to be 0.1541 eV and 0.0129 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the $\Gamma_5$ states of the valence band of the $ZnIn_2S_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$, and $C_1$-exciton peaks for n = 1. Also, we obtained the $A_{\infty^-}$ and B-exciton peaks from the PC spectrum at 293 K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.202-209
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• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.2
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• pp.103-110
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• 2008

Spin Hamiltonian for the paramagnetic center with a three-fold symmetry and high spin ($S{\geq}2$) multiplicity should contain the fourth order zero-field splitting (ZFS) terms. Electron magnetic resonance transition lines of the center with S = 5/2 are expected to split in a pair when the magnetic field is applied off the principal axes of ZFS, while they are superimposed when the magnetic field is applied parallel to the principal axes of ZFS. In this study we report that the transition lines of $Mn^{2+}$ centers at the three-fold symmetric sites in $LiNbO_3$, chemically equivalent but physically different, split in two due to the nonzero fourth order ZFS term.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.139-156
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• 1996

The phase field model is becoming the model of choice for the theoretical study of the morphologies of crystals growth from the melt. This model provides an alternative approach to the solution of the classical (sharp interface) model of solidification by introducing a new variable, the phase field, Ø, to identify the phase. The variable Ø takes on constant values in the bulk phases and makes a continuous transition between these values over a thin transition layer that plays the role of the classically sharp interface. This results in Ø being governed by a new partial differential equation(in addition to the PDE's that govern the classical fields, such as temperature and composition) that guarantees (in the asymptotic limit of a suitably thin transition layer) that the appropriate boundary conditions at the crystal-melt interface are satisfied. Thus, one can proceed to solve coupled PDE's without the necessity of explicitly tracking the interface (free boundary) that would be necessary to solve the classical (sharp interface) model. Recent advances in supercomputing and algorithms now enable generation of interesting and valuable results that display most of the fundamental solidification phenomena and processes that are observed experimentally. These include morphological instability, solute trapping, cellular growth, dendritic growth (with anisotropic sidebranching, tip splitting, and coupling to periodic forcing), coarsening, recalescence, eutectic growth, faceting, and texture development. This talk will focus on the fundamental basis of the phase field model in terms of irreversible thermodynamics as well as it computational limitations and prognosis for future improvement. This work is supported by the National Science Foundation under grant DMR 9211276

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.45-49
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• 2016

Ground state energy levels of $Gd^{3+}$ ion (effective spin S = 7/2) in $PbWO_4$ single crystal doped with $Gd^{3+}$ paramagnetic impurity at tetragonal symmetry are calculated with spectroscopic splitting parameters and zero field splitting parameters using by effective spin Hamiltonian. It turns out that the zero field splitting energies of $Gd^{3+}$ ion were the same regardless of the directions of $PbWO_4$ : Gd single crystal. The calculated energy differences for ${\mid{\pm}7/2}$ > ${\leftrightarrow}{\mid{\pm}5/2}$ >, ${\mid{\pm}5/2}$ > ${\leftrightarrow}{\mid{\pm}3/2}$ >, and ${\mid{\pm}3/2}$ > ${\leftrightarrow}{\mid{\pm}1/2}$ > transitions were 6.9574 GHz, 6.9219 GHz, and 15.8704 GHz, respectively when the applied magnetic field is zero. The calculated energy level diagrams were different for different directions of applied magnetic field. For B // a- and c-axis, the energy level diagrams are calculated and discussed.

• Journal of the Korean Magnetic Resonance Society
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• v.22 no.2
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• pp.40-45
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• 2018

We report Optically-Detected Magnetic Resonance (ODMR) study on Nitrogen-Vacancy (NV) centers in diamond. The experiment can easily be conducted with basic optics and microwave components. A diamond crystal having a high-density NV center is suitable for the ODMR study. The magnetic field dependence of ODMR spectrum allowed us to determine the orientation of the diamond crystal. In addition, we measured the variation of the ODMR spectrum as a function of the excitation laser power. Thermal heating induced by optical absorption caused the monotonic decrease of zero field splitting. The contrast of the ODMR peak, however, increased and, then, began to decrease, indicating the optimal laser power for recording the ODMR spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.179-182
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• 2004

The $p-CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the Photoluminescence spectra of the as-grown $CdIn_2Te_4$ crystal and the various heat-treated crystals, the $(D^{o},X)$ emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_2Te_4:Cd$, while the $(A^{o},X)$ emission completely disappeared in the $CdIn_2Te_4:Cd$. However, the $(A^{o},X)$ emission in the photoluminescence spectrum of the $CdIn_2Te_4:Te$ was the dominant intensity like an as-grown $p-CdIn_2Te_4$ crystal. These results indicated that the $(D^{o},X)$ is associated with $V_{Te}$ acted as donor and that the $(A^{o},X)$ emission is related to $V_{Cd}$ acted as acceptor, respectively. The $p-CdIn_2Te_4$ crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of $(D^{o},\;A^{o})$ emission and its TO Phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and accepters such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_2Te_4$ was confirmed not to form the native defects because it existed in the stable form of bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.376-376
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• 2010

The single crystals of p-$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of $\Gamma_7$(A), $\Gamma_6$(B), and $\Gamma_7$(C) to the conduction band state of $\Gamma_6$, respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the $CdIn_2Te_4$ band gap energy was given by the equation of $E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$. $E_g$(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.