• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1939-1943
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• 2003

The precise structural analysis of $SnO_{2}$ thin film, which was prepared by PECVD and thickness 2400 ${\AA}$, was tried to do the structural refinement using X -ray diffraction data. The observed diffraction patterns of $SnO_{2}$ thin film had the strongly preferred orientation effect. WIMV method was used to correct the preferred orientation effect. The final weighted R-factor, $R_{WD}$ was 7.92 %. The lattice parameters, a = b == 4.7366(1) ${\AA}$ and c = 3.1937(1) ${\AA}$, were almost in accordance with ones of $SnO_{2}$ powder.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.410-416
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• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.61-62
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• 2000

We have studied the molecular orientation by the phase transitions of the chiral smectic liquid crystals, 4-(1-Trifluoromethyl-6-ethoxy-hexyloxycarbonlphenyl)-4-nonyloxybiphenyl-4-carbo-xylate (R-TFMEOHPNBC) to seek the original solution of the zig-zag defect using two different experimental techniques; optical system and x-ray scattering. The phase sequence is gamma ferroelectric $(SmC{\gamma}\;^*)$ ${\rightarrow}$ smectic A (SmA) ${\rightarrow}$ isotropic (I). Existence of two layer spacing at chiral smectic phase gives a possibility of the molecular orientation in two different tilt angles, ${\theta}\;_1$ and ${\theta}\;_2$, which are separated each other to the layer normal at a given temperature. The gamma ferroelectric-like phase is, first, discovered in the single compound.

• 한국표면공학회지
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• 제29권5호
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• pp.585-592
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• 1996

In order to investigate the influence of gas pressure in PVD deposition conditions, aluminum films were prepared by vacuum evaporation and ion plating. The crystal orientation and morphology of the films affected by argon gas pressures were characterized by using X-ray diffraction (XRD) and scanning electron micrography (SEM) respectively. With the increasing of argon gas pressure, the preferred orientation of aluminum films exhibited (200) and the diffraction peaks of the films became less sharp and broadened. Film's morphology changed from columnar structure to granular structure with the increase of gas pressure. And the properties of these films on corrosion behaviors were estimated by measuring anodic polarization curves in deaerated 3% NaCl solution. The aluminum films which exhibited granular structure with (200) preferred orientation showed good corrosion resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.610-612
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• 1999

In this study, we used both displacement-current method and BAM(Brewster-Angle Microscope) to study on the molecular orientation of monolayer on the water surface. The displacement-current method measured behaviors of molecules by current and BAM was shown to be sensitive to film anisotropy even when the molecules were not tilted as long as the unit cell was anisotropic. Every transition was visible with BAM technique, either as a dramatic change in decree of contrast or as a sudden alteration of the mosaic domain texture.

• 한국결정성장학회지
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• 제26권1호
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• pp.49-52
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• 2016

본 연구에서는 AlN 결정 성장시 중요한 공정변수 중의 하나인 성장 압력과 온도 조건에 따라 다르게 성장되는 AlN 결정상의 결과에 대하여 고찰하였다. AlN 결정 성장은 6H-SiC 종자 결정을 사용하여 PVT(Physical Vapor Transport)법을 적용하여 성장시켰다. 성장 압력과 온도에 따라 AlN 결정의 특성이 변화하였고, Raman 분석을 통해 다양한 방향을 갖는 AlN 결정이 SiC 종자 결정 위에 성장되는 것을 확인하였다.

• 한국세라믹학회지
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• 제22권2호
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• pp.51-57
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• 1985

Silicon single crystals were grown bynon-seeded vertical Brdgmen-Stockbarger technique. Optimum growth rate appeared 5mm/hr in the system. It was identified that the preferential orientation using by the optical microscope resulted in <100> direction.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2001년도 추계학술강연 및 발표대회
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• pp.23-23
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• 2001

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.155-155
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• 2006

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2001년도 High Temperature Superconductivity Vol.XI
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• pp.39-39
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• 2001