• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.162-166
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• 1993

Spodumene$(LiAlLi_2O_6)$ single crystal was grown by Floating Zone process using the image furnace having the halogen lamp as heat sources. The crystal had the dimension of 50~60mm length and 6~8mm diameter. The colors of as-grown crystals were green, black and pale green respectively. The composition of the crystal was analized by XRD and FUR measurement. Growth orientation was examined by Laue back reflection pattern and for measuring the light transmittance, OPtical transmittance was measured.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.1-12
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• 2020

In this study, thin foil fabrication using Ni/Ni₃Al single crystal was performed by cold-rolling. It was found that the cold-rolling behavior was strongly dependent on the initial crystallographic orientation rather than morphology of Ni₃Al precipitates. The deformation banding was formed in the case of (100)[001]- and (210)[001]-oriented specimens at 83% reduction in thickness. However, the effects of Ni₃Al precipitates morphology on the microstructure evolution of Ni/Ni₃Al single crystals during cold-rolling were not so serious comparing with the effects of initial crystallographic orientation. Therefore, it could be concluded that the deformation behavior of Ni/Ni₃Al single crystals at serious strain level was strongly dependent on the initial crystallographic orientation rather than the morphology of Ni₃Al precipitates, whereas the initial deformation behavior was related to both crystallographic orientation and the morphology of Ni₃Al precipitates.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.05a
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• pp.245-249
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• 2001

This paper is concerned with numerical analyses for bulk forming of a single crystal milli-product, whose typical size ranges from a few hundreds ${\mu}m$ to a few mm. The numerical formulation invoked in this paper combines the crystal plasticity theory considering texture development and the ductile damage mechanics for growth of micro voids, since orientation development and growth of micro voids become the primary factors for bulk forming of milli-size products. As applications, milli-extrusion of a single crystal round bar and milli-rolling of a single crystal plate are simulated and the results are discussed in detail.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.449-455
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• 1997

The anisotropic etching behavior of single crystal silicon were studied in aqueous KOH solution. N-type (100) oriented single crystal silicon wafers were used for the study, and the $SiO_2$ layer, whose etching rate is known to be much slower than that of silicon in the KOH solution, was used as a mask for the silicon etching. The silicon etching rate and the etching properties are shown to be a function of etchant temperature uniformity, circulation speed, and circulation direction of the etchant as well as the etchant concentration and the temperature. The etching rate is increased as the temperature is increased from $10\mu \textrm{m}/hr$ to $250\mu \textrm{m}/hr$ in the range of $50^{\circ}C~105^{\circ}C$. Hillock density and height is observed to be correlated with the etchant concentration and the etch temperature. The variation of the hillock density was explained by the ratio between the etching rate of (100) orientation and that of (111) orientation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.626-630
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• 2022

A 100 mm × 50 mm-sized (100) gallium oxide (Ga₂O₃) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga₂O₃ ingot were compatible with a commercial Ga₂O₃ substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga₂O₃ crystals. In particular, we observed A_g(5) and A_g(10) peaks of Raman active mode, directly related to the impurity of the grown Ga₂O₃ crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga₂O₃ single crystal quality in the future.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.47-50
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• 1999

The orientation mechanism of an amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ phase were studied by using the dilatometry. The amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ samples brought about a volume shrinkage at the onset of the crystallization of a $Bi_{2}$$Sr_{2}$$CaCu_{2}$$O_{6}$phase around $400^{\circ}C$. The random crystal growth of $Bi_{2}$$Sr_{2}$$CaCu_{2}$$O_{8}$ phase around $800^{\circ}C$. yielded a rapid volume expansion and after then samples shrinmed, accompanied with the crystal orientation. The$Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ (x=0.4) sample exhibited the best-oriented structure because the liquid phase formed seemed to have the lowest viscosity which would contributed to the easy collapse of the card-house structure.

• Polymer(Korea)
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• v.26 no.4
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• pp.431-438
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• 2002

We studied the orientation behavior and thermal stability of polyimide (PI) molecules under irradiation of polarized UV (PUV) using polarized fourier transform infrared (FTIR) spectroscopy. In the case of PUV-exposed PI films, the remaining PI molecules after photo-degradation showed molecular orientation perpendicular to the irradiated PUV polarization direction predominantly, due to the preferential degradation of PI molecules parallel to the irradiated PUV Polarization direction. On the other hand, the rubbing of PI films induced reorientation of the PI molecules parallel to the rubbing direction. We also investigated the thermal stability of the alignment layers furled by rubbing and PUV irradiation on the PI films using Polarized FTIR. The thermal stability of the PUV irradiated PI alignment layer is lower than that of the rubbed PI layer due to the fragmentation reaction of the PI by PUV.

• Applied Microscopy
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• v.45 no.1
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• pp.23-31
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• 2015

Dark field (DF) transmission electron microscopy image has become a popular characterization method for two-dimensional material, graphene, since it can visualize grain structure and multilayer islands, and further provide structural information such as crystal orientation relations, defects, etc. unlike other imaging tools. Here we present microstructure of graphene, particularly, using DF imaging. High-angle grain boundary formation wass observed in heat-treated chemical vapor deposition-grown graphene on the Si substrate using patch-quilted DF imaging processing, which is supposed to occur by strain around multilayer islands. Upon the crystal orientation between layers the multilayer islands were categorized into the oriented one and the twisted one, and their local structure were compared. In addition information from each diffraction spot in selected area diffraction pattern was summarized.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.493-495
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• 2007

Cinnamate groups are well-known for a dimerization reaction upon exposure to ultraviolet irradiation and a thermal reaction after being heated. In this study, to verify the thermal reaction of the cinnamate group in detail, we investigated the thermal crosslinking of cinnamate oligomers. The thermal reaction of cinnamate oligomers of low molecular weight is induced more readily by thermal energy compared with that of cinnamate polymers. The orientation of the liquid crystal depended on the length of the spacers in the cinnamate oligomers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.468-473
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• 2008

A MgO layer is used as electrode protective film in the alternating current plasma display panel (AC PDP). The properties of MgO layer are thought to be one of the most important factors that affects the panel reliability through the firing voltage variation. In this study, we investigated the relations between the surface characteristics and e-beam evaporation process parameters such as deposition rate, temperature of substrate and distance between the MgO pellet and substrate. To produce the MgO layer of (200) crystal orientation, we suggest the high temperature of the substrate, the long distance between the pellet and substrate and the high deposition rate.