• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.556-560
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• 2012

Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.

• Transactions on Electrical and Electronic Materials
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• v.9 no.5
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• pp.202-205
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• 2008

We have studied the liquid crystal (LC) orientation behavior on the organic hybrid overcoat layer with ion beam irradiation. Excellent LC alignments of the nematic liquid crystal (NLC) on the ion beam irradiated organic hybrid overcoat layers were observed in various intensities above 600 eV. Pretilt angles of the NLC on the organic hybrid overcoat layers for all ion beam energy intensities were observed from 0.2 to 0.5 degrees. Also, we used the atomic force microscopy (AFM) images for measuring the roughness of the organic hybrid overcoat layers with ion beam irradiation before and after. The surface of organic hybrid overcoat layers was leveled off by the ion beam irradiation. Finally, a good LC alignment thermal stability on the organic hybrid overcoat layer with ion beam irradiation can be achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.480-485
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• 2011

ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.

• Macromolecular Research
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• v.9 no.6
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• pp.303-312
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• 2001

The fabrication of liquid crystal display (LCD) panels involves several thermal processes such as imidization of the alignment layer (AL) and annealing of the rubbed polyimide AL. The nature of these processes on the LC alignment, especially on the pretilt angle (Θ$\_$p/) has been systematically studied, employing various types of polyimide structures. The imidization effect depends on the nature of polyimid precursors; Θ$\^$p/ increases with the degree of the imidization for the main-chain type of ALs, due to the decrease in the surface polarity, but this relation is not applicable to the alkylated ones in which the steric effect at the AL surface by the aliphatic side chains is dominant. Annealing of the rubbed polyimide AL deteriorates its rubbing-induced molecular orientation and subsequently the overlying LC alignment, resulting in the decrease in Θ$\_$p/. Especially, annealing of the LC cell affects the LC-AL interaction as well as the AL orientation and thus its effect on LC alignment depends sensitively on the nature of LC-polyimide interface; aromatic moiety in the polyimide structure gives better thermal stability of LC alignment while fluorinated polyimide ALs induce the less stable alignment.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.51-56
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• 2008

The crystal structures and morphologies of precipitates in $L1_0$-ordered TiAl intermetallics containing nitrogen were investigated by transmission electron microscopy (TEM). Under aging at an approximate temperature of 1073 K after quenching from 1423 K, TiAl hardens appreciably due to the nitride precipitation. TEM observations revealed that needle-like precipitates, which lie only in one direction parallel to the [001] axis of the $L1_0$-TiAl matrix, appear in the matrix preferentially at the dislocations. Selected area electron diffraction (SAED) pattern analyses showed that the needle-shaped precipitate is perovskite-type $Ti_3AlN$ (P-phase). The orientation relationship between the P-phase and the $L1_0$-TiAl matrix was found to be $(001)_P//(001)_{TiAl}\;and\;[010]_P//[010]_{TiAl}$. By aging at higher temperatures or for longer periods at 1073 K, plate-like precipitates of $Ti_2AlN$ (H-phase) with a hexagonal structure formed on the {111} planes of the $L1_0$-TiAl matrix. The orientation relationship between the $Ti_2AlN$ and the $L1_0$-TiAl matrix is $(0001)_H//(111)_{TiAl}\;and\;_H//_{TiAl}$.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.44-47
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• 1994

High $T_{c}$ superconducting $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$ thin film was grown up for c-axis orientation by epitaxial growth method on $LaAlO_{3}$ single crystal substrate. The crystal structures of this thin film were found to be c-axis orientation by X-ray diffraction patterns. Hall effect and resistivity measurements were made by van der Pauw method. Hall resistivity was calculated from the magnetoresistivity by considering thermomagnetic effect. The relation was $pH=p_{s}tan{\alpha}_{n}-QBT\frac{S_s}{K_s}$ The measured Hall resistivity and the calculated one are in good agreement each other.

• Progress in Superconductivity and Cryogenics
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• v.11 no.4
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• pp.16-19
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• 2009

The influence of nanorods grown on substrate prior to YBCO deposition has been investigated. We studied the microstructures and characteristic of $YBa_2Cu_3O_{7-\delta}$ films fabricated on $SrTiO_3$ (100) substrates with ZnO nanorods as one of the possible pinning centers. The growth density of ZnO nanorods was modulated through Au nanoparticles synthesized on top of the STO(100) substrates with self assembled monolayer. The density of Au nanoparticles is approximately $240{\sim}260\;{\mu}m^{-2}$ with diameters of 41~49 nm. ZnO nanorods were grown on Au nanoparticles by hot-walled PLD with Au nanoparticles. Typical size of ZnO nanorod was around 179 nm in diameter and $2{\sim}6\;{\mu}m$ in length respectively. The ZnO nanorods have apparently randomly aligned and exhibit single-crystal nature along (0002) growth direction. Our preliminary results indicate that YBCO film deposited directly on STO substrate shows the c-axis orientation while YBCO films with ZnO nanorods exhibit any mixed phases without any typical crystal orientation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• Corrosion Science and Technology
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• v.23 no.2
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• pp.93-103
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• 2024

In the present work, a phase-field model for dendritic solidification is applied to hot-dip ZnAlMg coatings to elucidate the morphology of zinc dendrites and the solute segregation leading to the formation of eutectics. These aspects define the microstructure that conditions the corrosion resistance and the mechanical behaviour of the coating. Along with modelling phase transformation and solute diffusion, the implemented model is partially coupled with the tracking of crystal orientation in solid grains, thus allowing the effects of surface tension anisotropy to be considered in multi-dendrite simulations. For this purpose, the composition of a hot-dip ZnAlMg coating is assimilated to a dilute pseudo-binary system. 1D and 2D simulations of isothermal solidification are performed in a finite element solver by introducing nuclei as initial conditions. The results are qualitatively consistent with existing analytical solutions for growth velocity and concentration profiles, but the spatial domain of the simulations is limited by the required mesh refinement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.274-280
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• 1998

Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.