• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.9-13
• /
• 1995

In this paper, Zinc Oxide films, with a high degree of c-axis orientation, have been grown on glass substrates by a rf magnetron sputtering. The maximum crystal orientation was found to occur with substrate temperature 150$^{\circ}C$, input power 190W, oxygen rate 50%, target-substrate distance 55mm. It is proposed to achieve high-resistivity ZnO films by increasing the annealing temperature. The piezoelectric layers, preferred oriented with (002) perpendicular to the layer with 4.9$^{\circ}$, could be obtained by the annealing temperature 300$^{\circ}C$ in oxygen atmosphere. It is indicated that the relative permittivity is range from 8.9 to 9.8 in the frequency ranging from 10KHz to 5MHz.

• Proceedings of the KSME Conference
• /
• 2003.11a
• /
• pp.1939-1943
• /
• 2003

The precise structural analysis of $SnO_{2}$ thin film, which was prepared by PECVD and thickness 2400 ${\AA}$, was tried to do the structural refinement using X -ray diffraction data. The observed diffraction patterns of $SnO_{2}$ thin film had the strongly preferred orientation effect. WIMV method was used to correct the preferred orientation effect. The final weighted R-factor, $R_{WD}$ was 7.92 %. The lattice parameters, a = b == 4.7366(1) ${\AA}$ and c = 3.1937(1) ${\AA}$, were almost in accordance with ones of $SnO_{2}$ powder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.5
• /
• pp.410-416
• /
• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.61-62
• /
• 2000

We have studied the molecular orientation by the phase transitions of the chiral smectic liquid crystals, 4-(1-Trifluoromethyl-6-ethoxy-hexyloxycarbonlphenyl)-4-nonyloxybiphenyl-4-carbo-xylate (R-TFMEOHPNBC) to seek the original solution of the zig-zag defect using two different experimental techniques; optical system and x-ray scattering. The phase sequence is gamma ferroelectric $(SmC{\gamma}\;^*)$ ${\rightarrow}$ smectic A (SmA) ${\rightarrow}$ isotropic (I). Existence of two layer spacing at chiral smectic phase gives a possibility of the molecular orientation in two different tilt angles, ${\theta}\;_1$ and ${\theta}\;_2$, which are separated each other to the layer normal at a given temperature. The gamma ferroelectric-like phase is, first, discovered in the single compound.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.585-592
• /
• 1996

In order to investigate the influence of gas pressure in PVD deposition conditions, aluminum films were prepared by vacuum evaporation and ion plating. The crystal orientation and morphology of the films affected by argon gas pressures were characterized by using X-ray diffraction (XRD) and scanning electron micrography (SEM) respectively. With the increasing of argon gas pressure, the preferred orientation of aluminum films exhibited (200) and the diffraction peaks of the films became less sharp and broadened. Film's morphology changed from columnar structure to granular structure with the increase of gas pressure. And the properties of these films on corrosion behaviors were estimated by measuring anodic polarization curves in deaerated 3% NaCl solution. The aluminum films which exhibited granular structure with (200) preferred orientation showed good corrosion resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.610-612
• /
• 1999

In this study, we used both displacement-current method and BAM(Brewster-Angle Microscope) to study on the molecular orientation of monolayer on the water surface. The displacement-current method measured behaviors of molecules by current and BAM was shown to be sensitive to film anisotropy even when the molecules were not tilted as long as the unit cell was anisotropic. Every transition was visible with BAM technique, either as a dramatic change in decree of contrast or as a sudden alteration of the mosaic domain texture.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.26 no.1
• /
• pp.49-52
• /
• 2016

The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.

• Journal of the Korean Ceramic Society
• /
• v.22 no.2
• /
• pp.51-57
• /
• 1985

Silicon single crystals were grown bynon-seeded vertical Brdgmen-Stockbarger technique. Optimum growth rate appeared 5mm/hr in the system. It was identified that the preferential orientation using by the optical microscope resulted in <100> direction.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2001.11a
• /
• pp.23-23
• /
• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2006.04a
• /
• pp.155-155
• /
• 2006