• Journal of the Korean Graphic Arts Communication Society
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• v.16 no.1
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• pp.25-38
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• 1998

The developing agent is the materials which first acts on silver grain and make it into metallic silver by reducing reaction. There are several types in developing agent, and according to Lumiere-Andresen principle, substitution product which has amino or hydroxyl group in benzen nucleus has a developing power, but all reduing substances are not in used. In the developing effect, not only the role of developing agent but also that of assistant materials are important. But in this work, we have studied effect, change by lith developing agent which require high contrast image. We made an developing experiment after having manufactured developing solution used hydroquinone and another developing agents like chlorohydroquinone, pyrocatechol and pyrogallol as developing agent. And we added that did in addition of diethanolamine and ascorbic acid, and then we examined the possibility of use.

• Journal of the Korean Magnetics Society
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• v.7 no.4
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• pp.205-211
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• 1997

The magnetic properties change which was induced by addition of small amount of Ni into Cr underlayer in CoCrTa/ CrNi thin film deposited by electron beam evaporator was investigated. The additional Ni element was found to be beneficial for incease in the coercivity of the thin film deposited at the room temperature. The origin of coercivity increase was elucidated by crystal orientation and microstructure investigation using XRD and AFM respectively. It was found that the grain size were increased by Ni addition. The coercivity of the film with CrNi underlayer is lower than that of film with Cr underlayer when prepared with higher substrate temperature. This result may be originated with the increase in grain size. When film was deposited at 280 $^{\circ}C$ substrate temperature, Cr segregation in grain boundary is found to be the other factor for determining coercivity value.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.336-346
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• 1994

We studied the reaction between silicon and carbon. Silicon granules and silicon with 0.2 wt% carbon powders were prepared for sample and then they were heated up to the $1450^{\circ}C, 1550^{\circ}C, 1650^{\circ}C, 1700^{\circ}C$ and were dwelled 1 hr and 4 hrs, respectively. we studied the change of morphologies of molten silicon and the formation of SiC following the reaction withcarbon using optical microscope, SEM, and XRD. Above the melting point of silicon, oxygens are precipitated during the decomposition of quartz used crucible. SiO formed from the reaction between molten silicon and precipitated oxygen evaporated and made the surface defects. SiC were formed with the reaction between the unreacted carbon and molten silicon. Polytype of the SiC formed at the solidification interface was ${\alpha}-SiC$.

• Korean Journal of Materials Research
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• v.21 no.4
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• pp.216-219
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• 2011

Perovskite manganites such as $RE_{1-x}A_xMnO_3$ (RE = rare earth, A = Ca, Sr, Ba) have been the subject of intense research in the last few years, ever since the discovery that these systems demonstrate colossal magnetoresistance (CMR). The CMR is usually explained with the double-exchange (DE) mechanism, and CMR materials have potential applications for magnetic switching, recording devices, and more. However, the intrinsic CMR effect is usually found under the conditions of a magnetic field of several Teslas and a narrow temperature range near the Curie temperature ($T_c$). This magnetic field and temperature range make practical applications impossible. Recently, another type of MR, called the low-field magnetoresistance(LFMR), has also been a research focus. This MR is typically found in polycrystalline half-metallic ferromagnets, and is associated with the spin-dependent charge transport across grain boundaries. Composites with compositions $La_{0.7}(Ca_{1-x}Sr_x)_{0.3}MnO_3)]_{0.99}/(BaTiO_3)_{0.01}$ $[(LCSMO)_{0.99}/(BTO)_{0.01}]$were prepared with different Sr doping levels x by a standard ceramic technique, and their electrical transport and magnetoresistance (MR) properties were investigated. The structure and morphology of the composites were studied by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). BTO peaks could not be found in the XRD pattern because the amount of BTO in the composites was too small. As the content of x decreased, the crystal structure changed from orthorhombic to rhombohedral. This change can be explained by the fact that the crystal structure of pure LCMO is orthorhombic and the crystal structure of pure LSMO is rhombohedral. The SEM results indicate that LCSMO and BTO coexist in the composites and BTO mostly segregates at the grain boundaries of LCSMO, which are in accordance with the results of the magnetic measurements. The resistivity of all the composites was measured in the range of 90-400K at 0T, 0.5T magnetic field. The result indicates that the MR of the composites increases systematically as the Ca concentration increases, although the transition temperature $T_c$ shifts to a lower range.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.25-29
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• 2010

Thulium oxide-doped barium titanate ceramics for MLCCs with perovskite structure were prepared by a sintering process at $1320^{\circ}C$ for 2 h in a reduced atmosphere. The effect of $Tm_2O_3$ addition on dielectric property of barium titanate ceramics has been studied in terms of their microstructures. Moreover, the phase identification of the dielectric specimens was conducted to define the secondary phase (pyrochlore). The specimen doped with 1 mol% $Tm_2O_3$ exhibited the highest dielectric constant. However, the dielectric constants of specimens with more than 2 mol% $Tm_2O_3$ to $BaTiO_3$ were the lower values than that of 1 mol% doped one. The grain size and the formation of pyrochlore phase associated with the dielectric properties were examined through morphology development and the structural analysis. Furthermore, these data were compared with the property of the dielectric material doped with $Er_2O_3$. It could be concluded that the dielectric property of ceramic capacitors were attributed to the change of pyrochlore phase and the tetragonality of $BaTiO_3$ with doping.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.183-186
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• 1990

The lattice mismatch between ZnS and Si is negligible because of its value being 0.39%. In this study, $ZnS/_{(P)}Si$ solar cell were fabricated as a layer of ZnS is epitaxially grown on a silicon substrate by PVD method and its photovoltaic properties were measured and discussed. The heat treatment was done after deposition. As the temperature increased up to a certain value, the film has better perfection in crystal structure and electrical characteristics. Measurments of the change that occur in the ZnS films were made by SEM., X-ray diffraction. The optimal thickness of film showned $0.6{\mu}m$, being measured by SEM. The great improvement of the grain growth ZnS film came out after heat-treatment. The result obtained from the $ZnS/_{(P)}Si$ solar cell as follows:short circuit current; $I_{sc}=54mA/cm^2$,open voltage; $V_{oc}=400mV$, fill factor FF=0.72, conversion efficiency; ${\eta}=15.6%$ under the irradiation of 100 ($mW/cm^2$) focused by solar energy. And these are discussed in comparison with other kinds.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1061-1069
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• 1998

The thermal instability of Al2TiO5 Ceramics was contrlled by solid solution with MgO SiO2 and ZrO2 through electrofusion in an arc furnace. The thermal expansion properties of Al2TiO5 composites show the hysteresis due to the strong anisotropy of The crystal axes of these material. These phenomena are ex-plained by the opening and closing of microcracks. The difference in microcracking temperatures e.g 587.6(ATG2), 405.9(ATG3) and 519.7$^{\circ}C$(ATG4) is caused by the difference in grain size and stabilizer type. The thermal shock behaviour under cyclic conditions between 750-1400-75$0^{\circ}C$ show no change in mi-crostructure and phase assemblage for all three stabilized specimens. After the thermal loading test at 110$0^{\circ}C$ for 100hrs. ATG1 and ATG2 materials decomposes completely to its components corundum and ru-tile in both cases. However with approximatelly 20% retention of the Al2TiO5 Thus in order to prevent decomposition of the stabilized material in the critical temperature range 800-130$0^{\circ}C$ it must be traversed within a short period of time.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.145-149
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• 2016

$(Bi_{1/2}Na_{1/2})_{0.94}Ba_{0.06}(Ti_{1-x}Nb_x)O_3$ (BNBTxNb) ceramics were investigated in terms of the crystal structure as well as the ferroelectric, dielectric, and piezoelectric properties. While little change was observed in the microstructure except for a slight decrease in the average grain size, a significant change was noticed in the temperature dependence of dielectric and piezoelectric properties. It was shown that the property changes are closely related to the downward shift in the position of the ferroelectric-to-relaxor transition temperature with increasing amount of Nb doping. A special emphasis is put on the fact that Nb doping is so effective at decreasing the ferroelectric-to-relaxor transition temperature that even at no more than 2 at.% Nb addition, the transition temperature was already brought down slightly below room temperature, resulting in the birth of a large strain at 0.46 %, equivalent to $S_{max}/E_{max}=767pm/V$.