• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.175-181
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• 2005

Ingots of rutile single crystals were grown by the skull melting method, and their characteristics were compared in terms of melt-dwelling time for each melt. The method is based on direct inductive heating of an electrically conducted melt by an alternating RF field, and the heating is performed by absorption of RF energy. $TiO_2$ is an insulator at room temperature but its electric conductivity increases elevated temperature. Therefore, titanium metal ring(outside diameter : 6cm, inside diameter : 4cm, thickness 0.2cm) was embedded into $TiO_2$, powder (anatase phase, CERAC, 3N) for initial RF induction heating. Important factors of the skull melting method are electric resistivity of materials at their melting point, working frequency of RF generator and cold crucible size. In this study, electric resitivity of $TiO_2$, $(10^{-2}\~10^{-1}\;{\Omega}{\cdot}m)$ at its melting point was estimated by compairing the electric resitivities of alumina and zirconia. Inner diameter and height of the cold crucible was 11 and 14cm, respectively, which were determined by considering of the Penetration depth $(0.36\~1.13cm)$ and the frequency of RF generator.

• Resources Recycling
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• v.14 no.5 s.67
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• pp.13-17
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• 2005

As a basic study for recycling molten converter slag as an ordinary portland cement (OPC) by a conversion process, the reaction mechanism and the rate of the formation of $C_4AF$ which is one of the main components of OPC were investigated. The converter slag whose basicity was controlled by adding reagent grade $SiO_2$ was melted and hold for 30 minutes in MgO crucible at $1300^{\circ}C{\sim}1350^{\circ}C$. Then, the sintered CaO pellet heated at the same temperature was dipped into the molten slag and hold for $10{\sim}30$minutes. After the reaction, the crucible was cooled in air and the specimen was cut off to the horizontal direction of the crucible. The dissolution rate of $C_3A$ pellet was measured by the change of radius of the sintered $C_3A$ pellet, and the formed phase of $C_4AF$ was observed by SEM/EDX. As a result, the dissolution rate of $C_3A$ pellet into molten slag was increased from $0.75{\times}10^{-4}(cm/sec)$ at $1300^{\circ}C$ to $1.67{\times}10^{-4}(cm/sec)$ at $1350^{\circ}C$, and the mixed layer of $C_4AF$ and $C_{12}A_7$ was found between slag and $C_3A$ pellet.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.43-47
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• 1990

An attempt was made to grow Y-Ba-Cu-O single crystals by skull method(cold crucible process). Grown YBa2Cu3O7-x(YBC) single crystals were obtained from the upper part of the YBC solid mixture. There were plate-like YBC single crystals aligned with solidified flux along the crystal growth direction. Single crystal size was (5$\times$2$\times$0.2㎣) and was grown to a-b plane of YBC crystal structure which can flow super currents. Optical microscope and X-ray diffraction were employed characterize these microstructure and YBC single crystals.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.536-542
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• 1990

Single crystals of YBa2Cu3O7-x have been grown in BaCuO2 flux at temperature of 125$0^{\circ}C$ and examined using XRD, EDAX and light microscopy. The YBCO crystals were grown in a cavity which was formed by the reduction of CuO and became large by the directional solidification in the crucible. The observed crystal growth habit is square planar with the c-axis normal to the plane. The surface morphology of grown crystals were growth ledges and growth sprial paterns on a (001) face.

• Journal of the Korean Ceramic Society
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• v.25 no.1
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• pp.78-82
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• 1988

Good quality LiNbO3 single crystals which can be applied to SAW devices, were grown by Czochralski method. It was observed that the gas-bubbles were concentrated in ring shape at the outer part of grown crystals, and this anomaly was illustrated by modeling the mechanism of gas-bubble entrapment according to the melt flow pattern in the crucible. And this mechanism was also encertained by observation of solid-liquid interface shape of grown crystals. The optimal condition for good quality crystals was known that the solid-liquid interface shape was slightly concave.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.137-140
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• 1999

Effects of annealing and impurities on the superconducting properties were investigated by the magnetization measurement in $Bi_2Sr_2CaCu_2O_{8+{\delta}}(Bi2212)$ single crystals grown by flux method. It has been found that the superconducting properties are affected by Mg and Al impurities remarkably. The transition temperature$(T_c)$ has been lowered by the impurity of Mg. However, the diamagnetism is remarkably increased in an annealed crystal grown in MgO crucible compared to that in $Al_2O_3$ crucible. The content of Mg impurity can not be considered as a principal parameter for the decay of superconducting properties probably because the diamagnetism is remarkably improved in annealed crystal containing Mg.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.141-147
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• 2018

Solar energy has attracted big attentions as one of clean and unlimited renewable energy. Solar energy is transformed to electrical energy by solar cells which are comprised of multi-silicon wafer or mono-silicon wafer. Monosilicon wafers are fabricated from the Czochralski method. In order to decrease fabrication cost, increasing a poly-silicon charge size in one quartz crucible has been developed very much. When we increase a charge size, the temperature control of a Czochralski equipment becomes more difficult due to a strong melt convection. In this study, we simulated a Czochralski equipment temperature at 20 inch and 24 inch in quartz crucible diameter and various charge sizes (90 kg, 120 kg, 150 kg, 200 kg, 250 kg). The simulated temperature profiles are compared with real temperature profiles and analyzed. It turns out that the simulated temperature profiles and real temperature profiles are in good agreement. We can use a simulated profile for the optimization of real temperature profile in the case of increasing charge sizes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.673-679
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• 2006

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. In this study, SiC crystal boules were prepared with different angles in trapezoid-shaped graphite seed holders using sublimation physical vapor transport technique (PVT) and then their crystal quality was systematically investigated. The temperature distribution in the growth system and the crystal shape were varied with angles in trapezoid-shaped graphite seed holders, which was successfully simulated using 'Virtual Reactor'. The SiC polytype proved to be the n-type 6H-SiC from the typical absorption spectrum of SiC crystal. The micropipe densities of SiC wafers in this study were measured to be < $100/cm^2$. Consequently, SiC single crystal with large diameter was successfully achieved with changing angle in trapezoid-shaped graphite seed holders.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.46-56
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• 1994

The characteristics of flows, temperatures, concentrations of the boron are numerically studied when uniform axial magnetic fields are applied in the Czechralski crucible. The to governing factors to the flow regimes are buoyancy, thermocapillarity, centrifugal forces, magnetic forces, diffusion coefficient and segregation coefficient of the boron. Since the concentration of the boron is so low that buoyancy effects are negligible, it cannot affect the flow and temperature fields. From the fact that the flow fields are rotationally symmetric, two velocity components in the meridional plane and the circumferential velocity are calculated together with the temperature in the steady state. Based on the known velocity and temperature distributions the unsteady concentration distributions of the boron are calculated. As the strength of the magnetic is increased, the flow velocities are decreased. Circumferential velocities are large near the crucible side-wall and in the region below the rotating crystal. Steep temperatures gradient near the edge of the rotating crystal causes the Marangoni convection. It has been found out that the convection characteristics affects the unsteady transport phenomena of the boron.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.75-78
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• 2009

Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.