• Title/Summary/Keyword: Crss

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Study on the Systematic Technology of Promoting Purification for the Livestock Wastewater and Reuse

  • Okada, Yoshiichi;Shim, Jae-Do;Mitarai, Masahumi;Kojima, Takayuki;Gejima, Yoshinori
    • Proceedings of the Korean Society for Agricultural Machinery Conference
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    • 1996.06c
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    • pp.692-700
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    • 1996
  • The objective of this study is to develop a systematic purification plant using the metabolism of aerobic microorganisms. This system is subsequently aerated and continuously removes suspended solids and settling sludges caused by aerating pressure at the bottom of a lower pipe (i.e., Continuous Removal of Suspended solids and Settling sludges, CRSS). The CRSS plants are brought out by introducing fine air bubbles into the liquid phase of a lower pipe in the bio-reactor. These plant uses aeration pipe, with multiple inlets to sweep the floor of bio-reactor tank, instead of the conventional scraper mechanisms. The principal advantage of this system is that it can continuously remove very small or light particles that settles completely within a short time. Once the particles have been floated to the surface, they can be moved into the pipe and collected in the settling tank by sequently aerated pressure. The experimental results shows that about 99.0% of the biochemical oxygen demand(BOD), 99.3% of the suspended solid(SS), 92.3% of the total nitrogen(T-N), 99.0% of the turbidity(TU), 100% of the total coliform(TC)and ammonia was respectively removed during aerobic digestion for 9 days. These result indicates that the CRS S plants are very effective for reduction and deodorization of swine wastewater contaminants, and the efflux from CRS S can either be discharged in the river or used as nutrient solution of formulation for plant growth factories. The developed CRSS plant proved to be flexible and it can simply be adapted to any type of biological waste treatment problem.roblem.

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A Novel 1700V 4H-SiC Double Trench MOSFET Structure for Low Switching Loss (스위칭 손실을 줄인 1700 V 4H-SiC Double Trench MOSFET 구조)

  • Na, Jae-Yeop;Jung, Hang-San;Kim, Kwang-Su
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.15-24
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    • 2021
  • In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P- polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.

Chatbot and Slide Widget-based Classroom Response System to Promote Classroom Participation (수업 참여 활성화를 위한 챗봇과 슬라이드 위젯 기반 교실응답시스템)

  • Sohn, Eisung
    • Journal of Korea Multimedia Society
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    • v.22 no.8
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    • pp.940-949
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    • 2019
  • Classroom response systems (CRS) have been proven to have positive educational effects on student engagement and participation by allowing immediate feedback to both students and instructors. We explore the use of a chatbot and slide widget-based CRS to overcome some of the challenges of existing mobile-based CRSs while retaining their advantages. Our system uses widely available instant messaging services and operates web-based slide widgets that can be seamlessly integrated into instructors' slides to visualize student feedback in various formats. The student survey results indicate that our system is as effective as conventional CRSs in promoting student engagement and participation.

A Study on the Deformation Behaviors of $Ni_3Al$ Single Crystals Depending on Crystallographic Orientations (결정학적 방위에 의존하는 $Ni_3Al$ 단결정의 변형거동에 관한 연구)

  • Han, Chang-Suk;Chun, Chang-Hwan;Han, Seung-Oh
    • Journal of the Korean Society for Heat Treatment
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    • v.22 no.3
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    • pp.155-161
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    • 2009
  • An investigation of the deformation behavior of ${\gamma}'-Ni_3Al$ single crystals containing fine dispersion of disordered ${\gamma}$ particles was performed for several different crystal orientations. Deformation structures were observed by the weak-beam method of transmission electron microscopy (TEM). The critical resolved shear stress (CRSS) for (111) [$\bar{1}$01] slie. increases with increasing temperature in the temperature range where (111) slip operates. The CRSS for (111) [$\bar{1}$01] slip is dependent on crystal orientation in the corresponding temperature range. The temperature where the strenjlth reaches a maximum is dependent on crystal orientation; the higher the ratio of the Schmid factors of (010) [$\bar{1}$01] to that of (111) [$\bar{1}$01], the higher the peak temperature. The peak temperatures were increased by the precipitation of y particles for the samples of all orientations. Electron microscopy of deformation induced dislocation arrangements under peak temperature has revealed that most of dislocations are straight screw dislocations. The mobility of screw dislocations decreases with increasing temperature. Above the peak temperature, dislocations begin to cross slip from the (111) [$\bar{1}$01] slip system to the (010) [$\bar{1}$01] slip system, thus decreasing the strength.

Trench Power MOSFET using Separate Gate Technique for Reducing Gate Charge (Gate 전하를 감소시키기 위해 Separate Gate Technique을 이용한 Trench Power MOSFET)

  • Cho, Doohyung;Kim, Kwangsoo
    • Journal of IKEEE
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    • v.16 no.4
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    • pp.283-289
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    • 2012
  • In this paper, We proposed Separate Gate Technique(SGT) to improve the switching characteristics of Trench power MOSFET. Low gate-to-drain 전하 (Miller 전하 : Qgd) has to be achieved to improve the switching characteristics of Trench power MOSFET. A thin poly-silicon deposition is processed to form side wall which is used as gate and thus, it has thinner gate compared to the gate of conventional Trench MOSFET. The reduction of the overlapped area between the gate and the drain decreases the overlapped charge, and the performance of the proposed device is compared to the conventional Trench MOSFET using Silvaco T-CAD. Ciss(input capacitance : Cgs+Cgd), Coss(output capacitance : Cgd+Cds) and Crss(reverse recovery capacitance : Cgd) are reduced to 14.3%, 23% and 30% respectively. To confirm the reduction effect of capacitance, the characteristics of inverter circuit is comprised. Consequently, the reverse recovery time is reduced by 28%. The proposed device can be fabricated with convetional processes without any electrical property degradation compare to conventional device.

Privacy-Preserving Credit Scoring Using Zero-Knowledge Proofs (영지식 증명을 활용한 프라이버시 보장 신용평가방법)

  • Park, Chul;Kim, Jonghyun;Lee, Dong Hoon
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.29 no.6
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    • pp.1285-1303
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    • 2019
  • In the current credit scoring system, the credit bureau gathers credit information from financial institutions and calculates a credit score based on it. However, because all sensitive credit information is stored in one central authority, there are possibilities of privacy violations and successful external attacks can breach large amounts of personal information. To handle this problem, we propose privacy-preserving credit scoring in which a user gathers credit information from financial institutions, calculates a credit score and proves that the score is calculated correctly using a zero-knowledge proof and a blockchain. In addition, we propose a zero-knowledge proof scheme that can efficiently prove committed inputs to check whether the inputs of a zero-knowledge proof are actually provided by financial institutions with a blockchain. This scheme provides perfect zero-knowledge unlike Agrawal et al.'s scheme, short CRSs and proofs, and fast proof and verification. We confirmed that the proposed credit scoring can be used in the real world by implementing it and experimenting with a credit score algorithm which is similar to that of the real world.