• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.228-229
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• 2009

$VO_2$ thermistor was fabricated on $Al_2O_3$ substrate. and has a CTR (Critical Temperature Resistor) characteristic. $VO_2$ thermistor has a about $10^6$ resistance($\Omega$) in normal temperature. But When temperature is a about $80^{\circ}C$, Resistance of $VO_2$ thermistor is a about some hundred resistance: The resistance of $VO_2$ thermistor increased with increasing length and decreasing width.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.407-412
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• 2007

For $VO_{2}$ sensors applicable to temperature measurement by using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were investigated systematically as a function of the annealing condition. The starting materials, vanadium pentoxide ($V_{2}O_{5}$) powders, were mixed with vehicle to form paste. This paste was screen-printed on $Al_{2}O_{3}$ substrates and then $VO_{2}$ thick films were heat-treated at $450^{\circ}C$ to $600^{\circ}C$, respectively, for 1 hr in $N_{2}$ gas atmosphere for the reduction. As results of the temperature vs. resistance property measurements, the electrical resistance of the $V_{2}O_{5}$ sensor in phase transition range was decreased by $10^{3.9}$ order. The presented critical temperature sensor could be used in fire-protection and control systems.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.337-341
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• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

• Progress in Superconductivity and Cryogenics
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• v.22 no.4
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• pp.14-19
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• 2020

Here we present the comparative experimental study of the stability of the superconducting state in 4 mm YBCO tapes with copper lamination against local heat disturbances at 77 K. The samples are either directly cooled by immersing a bare YBCO tape into a liquid nitrogen pool or operate in nearly-adiabatic conditions when the tape is covered by a 0.6 mm layer of Kapton insulation. Main quench characteristics, i.e. minimum quench energies (MQEs) and normal zone propagation (NZP) velocities for both samples are measured and compared. Minimum NZP currents are determined by a low ohmic resistor technique eligible for obtaining V - I curves with a negative differential resistance. The region of transport currents satisfying the stationary stability criterion is found for the different cooling conditions. Finally, we use the critical temperature margin as a universal scaling parameter to compare the MQEs obtained in this work for YBCO tapes at 77 K with those taken from literature for low-temperature superconductors in vacuum at 4.2 K, as well as for MgB2 wires cooled with a cryocooler down to 20 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.243-244
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• 2006

As an preliminary study for the quench protection of high temperature superconducting (HTS) cable using superconducting fault current limiter (SFCL), experimental research was carried out. The test circuit was composed of Bi-2223/Ag HTS tape and a SFCL made of YBCO thin films. In the normal state, the applied current of 56 A, which was critical current of HTS tape, could be flown through the circuit without resistive loss. Increasing the currents, the quench development of both materials was investigated from the voltage signal acquired from the resistance of the quenched superconductor. Up to around 10 times of the critical current was applied to the HTS tape and the current limiting characteristics of SFCL were investigated. In addition, for the finding out the optimal operating condition of SFCL such as the numbers of elements, a shunt resistor was applied to the SFCL and quench characteristics were analyzed as well.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.1-8
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• 2000

One of today's very critical and sensitive accurate accelerometer which can be used higher temperature than $200^{\circ}C$ and corrosive environment, is particularly demanded for automotive engine. Because silicon is a material of large temperature dependent coefficient, and the piezoresistors are isolated with p-n junctions, and its leakage current increase with temperature, the performance of the silicon accelerometer degrades especially after $150^{\circ}C$. In this paper, The temperature characteristic of a accelerometer using silicon on insulator (SOI) structure is studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method(FEM) simulation program ANSYS. TCS of this accelerometer can be reduced to control the impurity concentration of piezoresistors, and TCO is related to factors such as process variation and thermal residual stress on the piezoresistors. In real packaging, The avarage thermal residual stress in the center support structure was estimated at around $3.7{\times}10^4Nm^{-2}^{\circ}C^{-1}$ at sensing resistor. The simulated ${\gamma}_{pT}$ of the center support structure was smaller than one-tenth as compared with that of the surrounding support structure.