• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.3-3
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• 2001

Recently TiN, TiAlN, CrN hardcoatings have adapted many industrial application such as die, mold and cutting tools because of good wear resistant and thermal stability. However, in terms of high speed process, general hard coatings have been limited by oxidation and thermal hardness drop. Especially in the case of PCB drill, high speed cutting and without lubricant process condition have not adapted these coatings until now. Therefore more recently, superhard nanocomposite coating which have superhard and good thermal stability have developed. In previous works, WC-TiAlN new nanocomposite film was investigated by cathodic arc ion plating system. Control of AI concentration, WC-TiAlN multi layer composite coating with controlled microstructure was carried out and provides additional enhancement of mechanical properties as well as oxidation resistance at elevated temperature. It is noted that microhardness ofWC-TiA1N multi layer composite coating increased up to 50 Gpa and got thermal stability about $900^{\circ}C$. In this study WC-TiAlN nanocomposite coating was deposited on PCB drill for enhancement of life time. The parameter was A1 concentration and plasma cleaning time for edge sharpness maintaining. The characteristic of WC-TiAlN film formation and wear behaviors are discussed with data from AlES, XRD, EDS and SEM analysis. Through field test, enhancement of life time for PCB drill was measured.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.15-16
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• 2000

The gate bias stress effect of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a $SiN_x/BCB$ gate insulator have been studied. The gate planarization was carried out by spin-coating of BCB (benzocyclobutene) on Cr gates. The BCB exhibits charge trappings during a high gate bias, but the stability of the TFT is the same as conventional one when it is between -25 V and +25 V. The charge trap density in the BCB increases with its thickness.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1430-1432
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. To reduce these effects of the grain boundaries, we investigated various influencing factors such as preferential chemical etching of grain boundaries, grid design, transparent conductive thin film, and top metallization along grain boundaries. Pretreatment in $N_2$ atmosphere and gettering by $POCl_3$ and Al were performed to obtain polycrystalline silicon of the reduced defect density. Structural, electrical, and optical properties of solar cells were characterized. Improved conversion efficiencies of solar cell were obtained by a combination of Al diffusion into grain boundaries on rear side, fine grid finger, top Yb metal grid on Cr thin film of $200{\AA}$ and buried contact metallization along grain boundaries.

• Corrosion Science and Technology
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• v.2 no.6
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• pp.253-259
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• 2003

Zirconium based alloys have been extensively used as a cladding material for fuel rods in nuclear reactors, due to their low thermal neutron absorption cross-section, excellent corrosion resistance and good mechanical properties at high temperatures. However, a cladding material for fuel rods in nuclear reactors was contact water during long time at high-temperature, so it is necessary to improve the wear and corrosion resistance of the fuel cladding, At ambient environment, there are few data or paper on the characteristic of corrosion in chloride solution and acidic solution. The specimens used in this work are pure Zr and Zircaloy-4. Zircaloy-4 is a specific zirconium-based alloy containing, on a weight percent basis, 1.4% Sn, 0.2% Fe, 0.1% Cr. Pitting corrosion resistance of two alloys by ASTM G48 is higher than that of electrochemical method. Passive film formed on Zircaloy-4 is mainly composed of $ZrO_2$, metallic Sn, and iron species regardless of formation environments. Also, passive film formed on Zr alloys shows n-type semiconductic property on the base of Mott-Schottky plot.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.634-641
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• 2004

The photocatalytic performance of $TiO_2$ thin films coated on porous alumina balls using various aqueous $TiOCl_2$ solutions as starting precursors, to which 1.0 $mol\%$ transition metal ($Ni^{2+},\;Cr^{3+},\;Fe^{3+},\;Nb^{3+},\;and\;V^{5+}$) chlorides had been already added, has been investigated, together with characterizations for $TiO_2$ sols synthesized simultaneously in the same autoclave through hydrothermal method. The synthesized $TiO_2$ sols were all formed with an anatase phase, and their particle size was between several nm and 30 nm showing ${\zeta}-potential$ of $-25{\sim}-35$ mV, being maintained stable for over 6 months. However, the $TiO_2$ sol added with Cr had a much lower value of -potential and larger particle sizes. The coated $TiO_2$ thin films had almost the same shape and size as those of the sol. The pure $TiO_2$ sol showed the highest optical absorption in the ultraviolet light region, and other $TiO_2$ sols containing $Cr^{3+},\;Fe^{3+}\;and\;Ni^{2+}$ showed higher optical absorption than pure sol in the visible light region. According to the experiments for removal of a gas-phase benzene, the pure $TiO_2$ film showed the highest photo dissociation rate in the ultraviolet light region, but in artificial sunlight the photo dissociation rate of $TiO_2$ coated films containing $Cr^{3+},\;Fe^{3+}\;and\;Ni^{2+}$ was measured higher together with the increase of optical absorption by doping.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.110-113
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• 2011

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 ${\mu}m$ $SiO_2$ dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from $650^{\circ}C$ to $750^{\circ}C$. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.38-42
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• 2008

316L stainless steel welding tube was electrolytically polished and the inner surface characteristics of the tube were tested. Electro-polishing variables such as current, voltage, concentration of electrolyte and electropolishing time were changed to seek for optimum condition. These makes a optimum conditions for the electro-polishing as 4000 A, 9 V, 1.7 specific gravity of electrolyte, and 30 minute of electro-polishing time. It makes the surface roughness as Ra < $0.25{\mu}m$. XPS test resulted as the ratio of CrO/FeO equals or more to 3/1. AES test resulted as the thickness of CrO film of $38{\AA}$. DTA test resulted as the tube did not react with $N_2,\;H_2\;and\;O_2$ gas below 1073K. As summarize above results, the electro- polished 316L stainless steel welding tube satisfied the conditions to apply as a pipeline for semi- conductor production facility and clean room.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.40-47
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• 2024

The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO₂) on p-type chromium oxide (Cr₂O₃) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO₂ is incorporated. In comparison to Cr₂O₃ films, the bare Cr₂O₃ nanorods exhibits a response 3.3 times greater to 50 ppm H₂S at 300℃, while the SnO₂-decorated Cr₂O₃ nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH₄, H₂S, CO₂, H₂), a notable selectivity toward H₂S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H₂S, thus advancing the prospects of gas sensor technology.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.171-172
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• 2013

종래의 흑연 위주 연료전지 분리판 개발되어 최근 고분자 전해질 막 연료전지가 높은 전력, 낮은 배기 가스 배출, 낮은 작동 온도로 자동차 산업에서 상당한 주목을 받고 있다. 요구사항은 높은 전기 전도도, 높은 내식성, 낮은 가스 투과성, 낮은 무게, 쉬운 가공, 낮은 제조비용이다. Thin film Cr 장비로 저항가열 furnace, sputter 등이 사용된다. 연료전지 분리판의 고전도도, 내부식성 보호막의 고속 증착을 위한 새로운 증착원으로 스퍼터 - 승화형 소스의 가능성을 유도 결합 플라즈마에 금속 봉을 직류 바이어스 함으로써 시도하였다. 유도 결합 플라즈마를 이용하여 승화증착 시스템을 사용하여 OES(SQ-2000)와 QMS (CPM-300)를 사용하여 $N_2$ flow에 따른 유도 결합 플라즈마를 이용한 스퍼터-승화 증착 시스템을 사용하여도 균일한 공정을 하는 것을 확인 하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.108-113
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• 1994

The characteristics of the oxidation prevention layers for the copper metallization were investigated. The thin films such as Cr, TiN and Al were used as the oxidation prevention layers for copper. Ultra thin aluminum films were found to prevent the oxidation of copper up to the highest oxidation annealing temperature among the barrier layers examined in this study. It was found that oxygen did not diffuse into copper through aluminum films because of the aluminum oxide layer formed on the aluminum surface and the ultra thin aluminum film could be a good oxidation barrier layer for the copper metallization.