• 한국표면공학회지
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• 제32권1호
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• pp.43-48
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• 1999

Oxidation behavior of 304 and 316 stainless steels was studied. After solution heat treatment, specimens were polished up to 1$mu \textrm{m}$ using $Al_2O_3$ powder and then subjected to oxidation between $300^{\circ}C$ and 50$0^{\circ}C$ in dry air. TEM and EDS were used for analyzing the components and structure of oxide film. TEM analysis of oxide film revealed that thin amorphous Fe oxide ($Fe_2O_3$) was formed on the top of surface while polycrystalline (Cr, $Fe_2O_3$ was formed below the amorphous Fe oxide layer. The specimens oxidized at $500^{\circ}C$ showed that 316 stainless steel had higher oxidation resistance than 304 stainless steel. These results suggest that Mo component of 316 stainless steel suppresses the formation of Cr carbide which may result in a local Cr depleted area.

• 한국표면공학회지
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• 제52권5호
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• pp.246-250
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• 2019

Nano-multilayered $Cr_{25.2}Al_{19.5}Si_{4.7}N_{50.5}$ films were deposited on the steel substrate by cathodic arc plasma deposition. They were corroded at $900^{\circ}C$ in $Ar/1%SO_2$ gas in order to study their corrosion behavior in sulfidizing/oxidizing environments. Despite the presence of sulfur in the gaseous environment, the corrosion was governed by oxidation, leading to formation of protective oxides such as $Cr_2O_3$ and ${\alpha}-Al_2O_3$, where Si was dissolved. Iron diffused outward from the substrate to the film surface, and oxidized to $Fe_2O_3$ and $Fe_3O_4$. The films were corrosion-resistant up to 150 h owing to the formation of thin ($Cr_2O_3$ and/or ${\alpha}-Al_2O_3$)-rich oxide layers. However, they failed when corroded at $900^{\circ}C$ for 300 h, resulting in the formation of layered oxide scales due to not only outward diffusion of Cr, Al, Si, Fe and N, but also inward movement of sulfur and oxygen.

• 한국세라믹학회지
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• 제45권3호
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• pp.161-166
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The metal nitride film formed on the stainless steel bipolar plates represented a microstructural morphology of fine columnar grains with 10 nm diameter and 60nm length in FE-SEM images. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• Metals and materials international
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• 제24권6호
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• pp.1285-1292
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• 2018

Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.646-648
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.99-99
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• 2014

Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.

• 한국재료학회지
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• 제24권4호
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• pp.194-200
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• 2014

Metallic Cr film coatings of $1.2{\mu}m$ thickness were prepared by DC magnetron sputter deposition method on c-plane sapphire substrates. The thin Cr films were ammoniated during horizontal furnace thermal annealing for 10-240 min in $NH_3$ gas flow conditions between 400 and $900^{\circ}C$. After annealing, changes in the crystal phase and chemical constituents of the films were characterized using X-ray diffraction (XRD) and energy dispersive X-ray photoelectron spectroscopy (XPS) surface analysis. Nitridation of the metallic Cr films begins at $500^{\circ}C$ and with further increases in annealing temperature not only chromium nitrides ($Cr_2N$ and CrN) but also chromium oxide ($Cr_2O_3$) was detected. The oxygen in the films originated from contamination during the film formation. With further increase of temperature above $800^{\circ}C$, the nitrogen species were sufficiently supplied to the film's surface and transformed to the single-phase of CrN. However, the CrN phase was only available in a very small process window owing to the oxygen contamination during the sputter deposition. From the XPS analysis, the atomic concentration of oxygen in the as-deposited film was about 40 at% and decreased to the value of 15 at% with increase in annealing temperature up to $900^{\circ}C$, while the nitrogen concentration was increased to 42 at%.

• 대한기계학회논문집B
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• 제30권12호
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• pp.1211-1217
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• 2006

This study is focused on oxidation prevention of STS430, which is generally used as solid oxide fuel cell(SOFC) interconnect at intermediate operating temperatures with oxidation-proof coatings. Inconel, $La_{0.6}Sr_{0.4}CoO_3(LSCo)$ and $La_{0.6}Sr_{0.4}CoO_3(LSCr)$ were chosen as coating materials. Using a radio frequency magnetron sputtering method, each target material was deposited as thin film on STS430 and was analyzed to find out favorable conditions. In this study, LSCr-coated STS430 can reduce electrical resistance to 1/3 level, compared with uncoated STS430. Also, long-term durability test at $700^{\circ}C$ for 1000 hours tells that LSCr thin layer performs an important role to prohibit serious degradations. Superior oxidation-resistant characteristic of LSCr-coated STS430 is attributed to the inhibition of spinel structure formation such as $MnCr_2O_4$.

• 한국세라믹학회지
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• 제41권6호
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• pp.450-455
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• 2004

NiCr 합금을 열증발원으로 사용한 thermal evaporation법으로 NiCr박막을 $Al_2$O$_3$/Si 기판 위에 증착시켰다. 이 때 동일한 량의 NiCr 합금을 1회에 모두 증착하는 방법과, l/2씩 2회 증착하는 방법으로 NiCr 박막을 각각 증착시켜, 박막의 미세구조에 따른 막의 특성변화를 고찰하였으며, 열처리 온도에 따른 NiCr 박막의 상 변화, 조성변화 및 미세구조 변화를 XRD, AES 및 FE-SEM으로 각각 분석하였다. 열처리 과정에서 박막내부에 존재하는 Cr 성분이 표면 쪽으로 확산하여 산화됨으로써 Cr산화층/Ni 층/Cr 산화층의 전형적인 다층구조를 형성함을 알 수 있었으며, 특히, $700^{\circ}C$ 이상에서는 Ni 층이 Cr산화층을 통하여 표면 쪽으로 확산됨으로써 표면에 원주형 결정립을 가지는 NiO 층을 형성하였다. 특히 Ni 층이 확산 전의 구조를 유지한 채 표면에 추가적인 NiO층이 형성되는데, 이는 형성된 Cr산화층의 확산이 상대적으로 Ni 층에 비하여 어려운데 기인한다.

• 센서학회지
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• 제5권5호
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• pp.69-77
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• 1996

Pt/Cr 이중층과 E-beam으로 증착된 산화막으로 구성된 발열체의 발열특성과 열처리 온도에 따른 Pt/Cr 이중층의 전기적, 구조적 특성을 살펴보았다. E-beam으로 증착된 산화막을 갖는 발열체의 표면 방사율(${\varepsilon}$)은 0.5임을 열전대와 I.R. Thermo-Vision System을 통하여 확인할 수 있었다. 한편 열처리전 Pt/Cr의 면저항은 Cr의 두께와는 무관한데, 이는 백금과 크롬의 계면에 형성된 산화크롬에 의한 것으로 사료되며, 열처리 온도가 증가함에 따라 Cr의 외부확산이 증대되고, Pt(220)면의 결정립이 성장함을 AES 분석결과와 SEM 촬영, XRD 분석을 통하여 알 수 있었다. 열처리 온도에 따른 특성 분석결과, $500^{\circ}C$에서 열처리한 Pt/Cr 이중층이 안정된 결정구조를 갖음을 XRD, AES 분석결과로 확인할 수 있었다.