• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• 한국재료학회지
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• 제17권4호
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.253-258
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• 2005

This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.

• 센서학회지
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• 제16권3호
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• pp.229-233
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• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• 한국재료학회지
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• 제17권6호
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• pp.308-312
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• 2007

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2002년도 춘계학술대회논문집
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• pp.13-22
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• 2002

This paper presents characteristics of CrOx thin-film Strain gauge pressure sensors, which were deposited on SUS630 diaphragm by DC reactive magnetron sputtering in an argon-Oxide atmosphere(Ar-(10%)$O_2$). The optimized condition of CrOx thin-film strain gauges were thicknessrange of 2500$\AA$ and annealing condition ($350^{\circ}C$, 3 hr) in Ar-10 %$O_2$deposition atmosphere. Under optimum conditions, the CrOx thin-films for strain gauge is obtained a high resistivity, $\rho$=156.7$\mu$$\Omega$cm, a low temperature coefficiect of resistance, TCR=-86 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 15. The output sensitivity of pressure sensor obtained is 2.46㎷/V and the maximum non-linearity is 0.3%FS and hysteresis is less than 0.2%FS. The output characteristics of pressure transmitter obtained is 4~20㎃ and total accuracy is less than $\pm$0.5%FS. In those conclusions, CrOx thin film pressure sensors is quite satisfactory for many applications in industrial electronics.

• 센서학회지
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• 제14권1호
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• pp.56-61
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• 2005

This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the $CrO_{x}$ sensing elements have studied. $CrO_{x}$ thin films with a linear gauge factor(GF${\fallingdotseq}$15), high electrical resistivity (${\rho}$ = $340{\mu}{\Omega}cm$) and TCR<-55 ppm/$^{\circ}C$ have been obtained. These $CrO_{x}$ thin films may allow high temperature pressure sensor miniaturization to be achieved.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• 한국정보통신학회논문지
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• 제14권6호
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• pp.1465-1468
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• 2010

습식 식각은 식각용액으로서 화학용액을 사용하는 공정으로 반응물이 기판표면에서 화학반응을 일으켜 표면을 식각하는 과정이다. 습식 식각 시 수${\mu}m$의 해상도를 얻기 위해서는 그 부식액의 조성이나, 에칭시간, 부식액의 온도 등을 고려하여야 한다. 본 실험에서 사용한 금속은 Cr, Al, ITO 로 모두 DC sputter 방법을 사용해서 증착하여 사용하였다. Cr박막은 $1300{\AA}$ 정도의 두께를 사용하였고, ITO (Indium Tin Oxide) 박막은 가시광 영역에서 투명하고 (80% 이상의 transmittance), 저저항 (Sheet Resistance : $50\;{\Omega}/sq$ 이하) 인 박막을 사용하였으며, 신호선으로 주로 사용되는 Al등의 증착조건에 따른 wet etching 특성을 조사하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.