• Textile Coloration and Finishing
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• v.16 no.5
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• pp.42-47
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• 2004

The main objective of this work is to develop melt-blown nonwoven fabric composite materials have electromagnetic shielding characteristics using thin copper film. Melt-blown nonwoven fabric is the matrix phase and thin copper films are the reinforcement of the composite materials. Thin copper films are incorporated as conductive fillers to provide the electromagnetic shielding property of the melt-blown nonwoven fabric. The width and interval of thin copper films in the nonwoven fabric are varied by changing 1, 3, 5 mm for thin copper film's width and 1, 3, 5 mm for thin copper film's interval. The shielding effectiveness(SE) of various melt-blown nonwoven fabrics is measured in the frequency range of 50 MHz to 1.8 GHz. The variations of SE of melt-blown nonwoven fabric with width and interval of thin copper films are described. Suitability of melt-blown nonwoven fabric for electromagnetic shielding applications is discussed. The results indicate that the melt-blown nonwoven fabric composite material using thin copper film can be used for the purpose of electromagnetic shielding.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.516-521
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• 2018

Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.651-655
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• 2017

This work reports the surface morphology and transmittance of copper oxide thin films for semitransparent solar cell applications. We prepared the oxide specimens by subjecting copper thin films to an oxidation reaction at annealing temperatures ranging between $100^{\circ}C$ and $300^{\circ}C$. The color of the as-deposited specimen was red, but changed to purple at the annealing temperature of $300^{\circ}C$. The surface morphology and transmittance of the specimens were significantly dependent on the annealing temperature and thickness of the copper films. Copper oxide nanoparticles prepared from a 20-nm-thick copper film at an annealing temperature of $300^{\circ}C$ provided a maximum transmittance of 93%. The obtained optical characteristics and surface morphology suggest that copper oxide thin films prepared by an oxidation reaction can be potentially employed as color- and transmittance-adjusting layer in semitransparent thin solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.385-385
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different oxygen concentration. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was in the range of 100-400 nm. AFM images show that the surface morphology was depended on the oxygen ratio. The crystal structure of copper oxide films was changed from metallic copper to copper oxide with increasing oxygen concentration. The oxidation states of Cu 2p and O 1s resulted from XPS were consistent with XRD results.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.205-209
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• 2001

Uniformly-doped silicon thin films were fabricated by ion beam sputter deposition. The thin films had four levels of copper dopant concentration ranging between 1 ${\times}$1019 and 1 ${\times}$ 1021 atoms/cm3 . Concentrations of Copper dopants were determined by the isotope dilution inductively coupled plasma mass spectrometry (ICP-MS) to provide certified reference data for the quantitative surface analysis by secondary ion mass spectrometry (SIMS). The copper-doped thin films were dissolved in a mixture of 1 M HF and 3 M HNO3 spiked with appropriate amounts of 65 Cu. For an accurate isotope ratio determination, both the detector dead time and the mass discrimination were appropriately corrected and isobaric interference from SiAr molecular ions was avoided by a careful sample pretreatment. An analyte recovery efficiency was obtained for the Cu spiked samples to evaluate accuracy of the method. Uncertainty of the determined copper concentrations, estimated following the EURACHEM Guide, was less than 4%, and detection limit of this method was 5.58 ${\times}$ 1016 atoms/cm3.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.1-6
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• 2002

A low temperature process technology of copper thin films has been developed by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between $130^{\circ}C$ and $250^{\circ}C$. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the $5 \times10^{-6}$ Torr vacuum condition and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.0 $\mu \Omega \cdot \textrm{cm}$ was obtained for the sample deposited at the substrate temperature of $180^{\circ}C$ after vacuum annealed at $300^{\circ}C$. The resistivity variations of the films was not exactly matched with the size of the nano-structures of the copper grains, but more depended on the contamination of the copper films.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.853-856
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• 2009

Highly polycrystalline copper indium diselenide (CuInSe2, CIS) thin films were deposited on glass or ITO glass substrates by two-stage metal organic chemical vapor deposition (MOCVD) at relatively mild conditions, using Cuand In/Se-containing precursors. First, pure Cu thin film was prepared on glass or ITO glass substrates by using a single-source precursor, bis(ethylbutyrylacetate)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, on the resulting Cu films, tris(N,N-ethylbutyldiselenocarbamato)indium(III) was treated to produce CuInSe2 films by MOCVD method at 400 ${^{\circ}C}$. These precursors are very stable in ambient conditions. In our process, it was quite easy to obtain high quality CIS thin films with less impurities and uniform thickness. Also, it was found that it is easy to control the stoichiometric ratio of relevant elements on demands, leading to Cu or In rich CIS thin films. These CIS films were analyzed by XRD, SEM, EDX, and Near-IR spectroscopy. The optical band gap of the stoichiometric CIS films was about 1.06 eV, which is within an optimal range for harvesting solar radiation energy.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.180-182
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• 2002

Copper thin films are prepared by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between $120^{\circ}C$ and $300^{\circ}C$. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the $5\times$10^{-6}$ Torr vacuum condition, and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.2 $\mu$$\Omega$.cm was obtained for the sample deposited at the substrate temperature of $180^{\circ}C$ after vacuum annealed at $300^{\circ}C$. The resistivity variations of the films was not exactly matched with the size of the nato-structures of the copper grains, but more depended on the deposition temperature of the copper films.