• Resources Recycling
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• v.21 no.3
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• pp.48-55
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• 2012

Recently, the recycling with environmentally friendly method has been an issue for various fields. An effective removal method of coating layers from coated copper wires is one critical factor for recycling copper wire. We have adopted a high frequency heating routine for removing the coating layers on the coated copper wires, and attempted to find optimum conditions. The experimental results show that the copper wires should be maintained at or above $950^{\circ}C$ for rapid removal of the polyester. The simulation and experimental results are discussed with respect to the microstrucrual evolution during heating of the copper wires.

• Resources Recycling
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• v.23 no.3
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• pp.37-43
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• 2014

A study has been made on the recovery of tin and copper from waste solder stripper by oxalate precipitation. With the increasing of the oxalic acid addition, tin was precipitated effectively and removed above 99.5% of tin when the oxalic acid, in an amount 1.0-1.5 times the stoichometric requirement, was added. But, in this case, only 2.0% of copper was precipitated and lead, iron were not precipitated. So, tin was selectively removed from the waste solution. With the increasing of the reaction temperature, the removal percentage of tin was increased and maximum value at arounf $60^{\circ}C$ and decreased with increase in the temperature any more. After filtering the precipitate and drying in oven, $SnO_2$ was obtained from the precipitate. After removal of tin in stripping solution, above 91% of copper was selectively removed by Cu-oxalate by addition of oxalic acid.

• Resources Recycling
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• v.9 no.1
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• pp.70-75
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• 2000

The sand particle was coated with $Fe_3O_4$ and then $Fe_2O_3$ that adsorption capacity was more excellent than $Fe_3O_4$ was mostly found in 2nd step for preparation of iron-oxide-coated sand (IOCS). The copper removal rate was 74.9 percent by adding 30 gram per liter iron-oxide-coated sand from the solution with 5 mg/l Cu in 20 minute. Breakthrough time occurred in 23 hours and adsorption capacity 0.87$\cdot$Cu/g$\cdot$IOCS in case of breakthrough copper concentration was 1.0 mg/l in the continuous test.

• Macromolecular Research
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• v.10 no.2
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• pp.103-107
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• 2002

High purity water soluble chitosans (WsCs) were employed as a flocculant to remove heavy metal ions from wastewater of industrial plating wastewater treatment complex. Their weight average molecular weights and polydispersities were 272,000~620,000 g/mol and 1.4~1.9 range, respectively and were readily soluble in water in the pH range of 3~11. Heavy metal ions such as chromium, iron and copper were removed well by WsCs. When WsCs was blended with either sodium N, N-diethyldithiocarbamate trihydrate (SDDC$_{T}$) or sodium salicylate (SSc), the removal efficiency was further increased primarily due to the excess amount of hydrophilic sulfonic and carboxylic groups. Especially, in the case of WsCs-SSc the remaining chromium and copper concentrations were 0.1 mg/L and 9.5 mg/L, which are 1/15 and 1/3 compared with that of pure WsCs, respectively. The former is within the acceptable limit, but the latter is not. Therefore, the effective copper flocculant remains to be studied.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Journal of Korean Society on Water Environment
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• v.22 no.1
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• pp.172-176
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• 2006

Fe(III)-Coated Star Fish (ICSF) was prepared by reaction of calcined Star Fish (SF) with Fe(III) solution at an elevated temperature. To investigate the stability of ICSF at acidic condition, dissolution of Fe was studied at pH 2 as a function of time. Extracted iron was negligible over the entire reaction time. This stability test suggests the applicability of ICSF in the treatment of wastewater even at low pH. Adsorption capacity of Cu(II) onto SF and ICSF was investigated in a batch and a column test. In the pH-edge adsorption, adsorption of copper onto SF and ICSF was quite similar over the entire pH range due to the presence of an important amount of Fe in SF itself. From the adsorption isotherm obtained with variation of the concentration of Cu(II), ICSF showed 1.6 times greater adsorption capacity than SF. Also, ICSF showed a greater removal capacity of Cu(II) in the column test.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.28-31
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• 2003

Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H$_2$O$_2$ 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Tribology and Lubricants
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• v.31 no.3
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• pp.79-85
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• 2015

RC delay is a critical issue for achieving high performance of ULSI devices. In order to minimize the RC delay time, we uses the CMP process to introduce high-conductivity Cu and low-k materials on the damascene. The low-k materials are generally soft and fragile, resulting in structure collapse during the conventional high-pressure CMP process. One troubleshooting method is electrochemical mechanical polishing (ECMP) which has the advantages of high removal rate, and low polishing pressure, resulting in a well-polished surface because of high removal rate, low polishing pressure, and well-polished surface, due to the electrochemical acceleration of the copper dissolution. This study analyzes an electrochemical state (active, passive, transpassive state) on a potentiodynamic curve using a three-electrode cell consisting of a working electrode (WE), counter electrode (CE), and reference electrode (RE) in a potentiostat to verify an electrochemical removal mechanism. This study also tries to find optimum conditions for ECMP through experimentation. Furthermore, during the low-pressure ECMP process, we investigate the effect of current density on surface roughness and removal rate through anodic oxidation, dissolution, and reaction with a chelating agent. In addition, according to the Faraday’s law, as the current density increases, the amount of oxidized and dissolved copper increases. Finally, we confirm that the surface roughness improves with polishing time, and the current decreases in this process.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.67-72
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• 2007

High Pressure Micro Jet (HPMJ) pad conditioning system was investigated as an alternative to diamond disc conditioning in copper CMP. A series of comparative 50-wafer marathon runs were conducted at constant wafer pressure and sliding velocity using Rohm & Haas IC1000 and Asahi-Kasei EMD Corporation (UNIPAD) concentrically grooved pads under ex-situ diamond conditioning or HPMJ conditioning. SEM images indicated that fibrous surface was restored using UNIPAD pads under both diamond and HPMJ conditioning. With IC1000 pads, asperities on the surface were significantly collapsed. This was believed to be due to differences in pad wear rates for the two conditioning methods. COF and removal rate were stable from wafer to wafer using both diamond and HPMJ conditioning when UNIPAD pads were used. Also, HPMJ conditioning showed higher COF and removal rate when compared to diamond conditioning for UNIPAD. On the other hand, COF and removal rates for IC1000 pads decreased significantly under HPMJ conditioning. Regardless of pad conditioning method adopted and the type of pad used, linear correlation was observed between temperature and COF, and removal rate and COF.