• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.77-82
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• 2022

PCB 기판의 구리 식각 시 전기도금된 배선과 기지층의 전도층은 다른 에칭 특성을 가지며 이로 인한 배선의 과에칭과 배선기저부의 언터컷 현상이 보고되고 있다. 본 연구에서는 구리 에칭의 조성 변화에 따른 구리 에칭 특성에 대하여 연구하였다. 분극법과 OCV (open circuit voltage)를 이용하여 에칭액의 전기도금 구리와 기지층 구리의 최적 과산화수소와 황산의 농도를 얻었다. OCV와 ZRA (zero resistance ammeter)분석법을 이용하여 억제재의 효과를 비교하였다. 구리배선과 기지층간의 갈바닉 전류를 ZRA 방법을 이용하여 측정 비교하였다. 갈바닉 전류를 최소화하는 억제재를 ZRA를 이용한 갈바닉 쌍으로부터 선택할 수 있었다.

• 한국기계가공학회지
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• 제18권2호
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• pp.38-43
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• 2019

Electrochemical etching is a popular process to apply metal patterning in various industries. In this study, the electrochemical etching using a patterned copper layer was proposed to fabricate multilayered structures. The process consists of electrodeposition, laser patterning, and electrochemical etching, and a repetition of this process enables the production of multilayered structures. In the fabrication of a multilayered structure, an etch factor that reflects the etched depth and pattern size should be considered. Hence, the etch factor in the electrochemical etching process using the copper layer was calculated. After the repetition process of electrochemical etching using copper layers, the surface characteristics of the workpiece were analyzed by EDS analysis and surface profilometer. As a result, multilayered structures with various shapes were successfully fabricated via electrochemical etching using copper layers.

• 한국재료학회지
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• 제31권10호
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• pp.569-575
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• 2021

The reactivity evaluation of copper is performed using ethylenediamine, aminoethanol, and piperidine to apply organic chelators to copper etching. It is revealed that piperidine, which is a ring-type chelator, has the lowest reactivity on copper and copper oxide and ethylenediamine, which is a chain-type chelator, has the highest reactivity via inductively coupled plasma-mass spectroscopy (ICP-MS). Furthermore, it is confirmed that the stable complex of copper-ethylenediamine can be formed during the reaction between copper and ethylenediamine using nuclear magnetic resonance (NMR) and radio-thin layer chromatography. As a final evaluation, the copper reactivity is evaluated by wet etching using each solution. Scanning electron micrographs reveal that the degree of copper reaction in ethylenediamine is stronger than that in any other chelator. This result is in good agreement with the evaluation results obtained by ICP-MS and NMR. It is concluded that ethylenediamine is a prospective etch gas for the dry etching of the copper.

• Advances in materials Research
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• 제1권4호
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• pp.349-359
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• 2012

To reveal localized plastic deformation zones in a tough pitch copper, the etching characteristics of a copper sample have been examined. The etching was carried out on a sample surface using an etchant consisting of 25 ml nitric acid solution and 75 ml water. To clarify the plastic deformation zone, the sample deformed plastically was heated to between $250^{\circ}C$ and $300^{\circ}C$ before the etching process. This is due to a change of the microstructure and crystal orientation in the plastic deformation zone producing recrystallized small grains. In this case, the plastically deformed zone is severely etched, whereas the undeformed zone is only slightly etched. Identification of the details of the deformation zone from the etching is further discussed.

• 한국응용과학기술학회지
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• 제32권3호
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• pp.512-521
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• 2015

PCB 제조에서 photoresist와 Copper Clad Laminate(CCL)의 구리표면과의 부착력을 항상시키기 위하여 사용되는 soft etching제를 제조하기 위하여 과산화수소 사용을 배제하고, 유기산과 유기과산화물을 이용하여 산의 종류, 농도, 에칭시간 등에 따른 구리표면의 에칭속도, 표면 조도, 및 오염도 등을 조사하였다. 또한 에칭 후의 표면의 얼룩을 제거하기 위한 안정제의 최적 배합 및 농도도 확립하였다. 본 연구 결과 유기산의 종류 중에서는 아세트산이 초기 구리 에칭속도가 가장 빨랐으며, 농도가 0.04 M이었을 때 $0.4{\mu}m/min$이였다. 유기과산화물인 APS의 농도는 높을수록 에칭속도가 가장 빨랐으나, 표면 오염이 심각하였다. 안정제 용액의 조성도 표면 오염도에 큰 영향을 주었다. 결과적 0.04 M 아세트산, 0.1M APS에 4 g/L의 안정제(ST-1)를 첨가한 에칭액의 경우 $0.37{\mu}m/min$의 에칭속도와 표면오염이 전혀 없으며, 표면 조도도 가장 우수하였다. 즉, CCL과 photoresist와 접착력을 향상시킬 수 있을 것으로 판단된다.

• 한국표면공학회지
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• 제32권3호
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• pp.410-415
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• 1999

The adhesion strength of sputtered copper films to Inconel substrates has been studied using the scratch test. The effects of substrate treatments before deposition such as chemical or ion bombardment etching were investigated by means of a mean critical load derived from a Weibull-like statistical analysis. It was found that the mean critical load was very weak unless the amorphous layer produced by mechanical polishing on the substrate surface was eliminated. Chemical etching in a nitric-hydrochloric acid bath was shown to have practically no effect on the enhancement of the adhesion. In contrast, the addition in this bath of nickel and copper sulphates allowed removal of the amorphous layer and an increase in the values of the mean critical load. However, it was observed that excessive chemical etching could cancel out the mean critical load enhancement. The results obtained in the case of ion bombardment etching pretreatments could be far higher than those obtained with chemical etching. Moreover, for a sufficiently long period of ion bombardment etching, the adhesion strength was so high that it was impossible to observe evidence of an adhesion failure.

• 산업기술연구
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• 제20권B호
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• pp.77-86
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• 2000

In order to observe the pattern forming of copper plate and chemical corrosion reaction, a study on the effect of the process parameters on the formation of micro-pattern by a photochemical etching of copper plate was carried out. The results are as follows : 1) Etching rate increases as the concentration of etchant increases under the regular condition of the temperature by the increasing of diffusion rate to surface. 2) Etching rate increases as the temperature of etchant increases by the fast acting of the material delivery of diffusion to surface under the regular condition of concentration. 3) It was found that etching speed increases as the material delivery of convection rising increased when the aeration speed of etchant increases. This result was from the fact acted by the material delivery of convection rising rather than material delivery of diffusion to the surface.

• 한국재료학회지
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• 제31권3호
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• pp.162-171
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• 2021

Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.

• 멤브레인
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• 제23권1호
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• pp.92-99
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• 2013

본 연구는 인쇄회로기판(PCB) 제조 시 에칭공정에서 발생되는 구리이온($Cu^{+2}$)을 고농도로 함유한 황산 폐에칭액을 NF 막분리법을 사용하여 에칭액 회수와 구리이온 처리를 효율적으로 수행하기 위한 NF 막여과 공정의 운전 조건을 설정하기 위한 기본 자료를 확보하는데 있다. 이를 위해 미국 Koch사의 SelRO MPS-34 4040 NF 막을 대상으로 구리이온을 고농도(5~25 g/L)로 함유한 모의 황산 폐에칭액의 회분식(dead-end) 나노여과 실험을 수행하여 투과 플럭스와 구리이온의 총괄 배제도를 측정하였다. 이 결과 황산용액에의 막 보관기간이 길수록, 황산용액의 pH가 낮을수록 황산에 의한 NF 막의 손상이 더 크게 발생하여 순수 투과 플러스가 증가하였다. 황산 폐에칭액의 투과 플럭스는 황산용액 내 구리이온의 농도가 증가할수록 막 표면에의 구리이온 농축(농도분극)의 증가에 따라 감소하였으며, 구리이온의 배제도는 구리이온의 농도가 높을수록, pH가 낮을수록, 황산용액 내의 막 보관기간이 길수록 낮아져 초기 37%에서 최소 15% 수준으로까지 감소하였다.

• 한국정밀공학회지
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• 제24권5호
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• pp.97-103
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• 2007

A novel selective metallization process to fabricate the fine conductive line based on inkjet printing has been investigated. Recently, Inkjet printing has been widely used in flat panel display, electronic circuits, biochips and bioMEMS because direct inkjet printing is an alternative and cost-effective technology for patterning and fabricating objects directly from design without masks. The photosensitive etching resist used in this process is an organic polymer which becomes solidified when exposed to ultraviolet lights and has high viscosity at ambient temperature. A piezoelectric-driven inkjet printhead is used to dispense 20-30 ${\mu}m$ diameter droplets onto the copper substrate to prevent subsequent etching. Repeatability of circuitry fabrication is closely related to the formation of steady droplets, adhesion between etching resist and copper substrate. Therefore, the ability to form small and stable droplets and surface topography of the copper surface and chemical attack must be taken into consideration for fine and precise patterns. In this study, factors affecting the pattern formation such as adhesion strength, etching mechanism, UV curing have been investigated. As a result, microscale copper patterns with tens of urn high have been fabricated.