• Imaging Science in Dentistry
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• 제30권2호
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• pp.101-108
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• 2000

Purpose : The effects of step numbers of copper wedge and exposure on the coefficient of determination (r²) of the conversion equation to Cu-equivalent image and on the Cu-equivalent value (mmCu) and it's coefficient of variation measured at each copper step and the mandibular premolar area were evaluated. Method: Digital image analyzing system consisted of scanner, personal computer, and a stepwedge with 10 steps of 0.03 mm copper in thickness as reference material was prepared for quantitative assessment of the bone mineral density. NIH image program was used for analyzing images. Results : The film having moderately high film density showed the discrepancy between the real thickness and the measured Cu-equivalent value of each copper step. The Cu-equivalent image was dependent on the determinational coefficient of the conversion equation than the coefficient of variance of the measured value. Conclusion : Obtaining conversion equation with high coefficient of determination and proper film exposure are supposed to be neccessary for quantitative assessment of bone density. Multiple steps in the range of the corresponding copper thickness to the bone density of the area to be measured should be prepared.

• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1572-1576
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• 2006

A dimeric precursor, $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ for the CVD of copper metal films, (dmaeH = N,N-dimethylaminoethanol) was synthesized by the reaction of copper(II) acetate monohydrate ($Cu(OCOCH_3)_2{\cdot}H_2O$) and dmaeH in toluene. The product was characterized by m.p. determination, elemental analysis and X-ray crystallography. Molecular structure of $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ shows that a dimeric unit $[Cu(dmae)(OCOCH_3)(H_2O)]_2$ is linked to another through hydrogen bond and it undergoes facile decomposition at 300 C to deposit granular copper metal film under nitrogen atmosphere. The decomposition temperature, thermal behaviour, kinetic parameters, evolved gas pattern of the complex, morphology, and the composition of the film were also investigated.

• 대한화학회지
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• 제55권4호
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• pp.620-625
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• 2011

구리수은막 전극(CBMFE)으로 전위차 역적정함으로써 이소니아자이드(INH)를 정량하는 간단하고 빠른 방법이다. 순수한 형태와 투약형태에 대해서 1.0-10.0 mg 범위에서 정량 할 수 있도록 적정조건을 설정하였다. 방법의 정밀도와 정확도는 통계적인 방법으로 평가되었으며, 정제와 시럽속에 함유된 INH 정량법은 F-시험과 t-시험을 통하여 영국약전(BP) 방법과 비교하였다.

• 대한기계학회논문집A
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• 제33권10호
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• pp.1158-1162
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• 2009

Fatigue limit of the copper film coated by Sn was estimated using Goodman diagram and Gerber diagram. To obtain the high cycle fatigue life curve, S-N curve, of the film, the high cycle fatigue test was carried out by applying the constant amplitude load to the film specimen with three different stress ratio of 0.05, 0.3 and 0.5 and the frequency of 40 Hz at room temperature in air. The free-standing film specimen 15.26${\mu}m$ thick was fabricated by etching process. The fatigue limits and S-N curves at the respective stress ratios were determined from the experimental works. It was shown that the S-N curves were dependent on the stress ratio and the fatigue limit was increased with decreasing the stress ratio. The dependency of the fatigue behavior was presented in empirical relationship. Using these relationships, the fatigue limit was predicted.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1807-1812
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• 2007

A bulge testing system was developed to measure mechanical properties of thin film materials. A bulge pressure test system for pressurizing the bulge window of the film and a micro out-of-plane ESPI(Electronic Speckle Pattern Interferometric) system for measuring deflection of the film were included in the testing system developed. For the out-of-plane ESPI system, whole field speckle fringe pattern, corresponding to the out-of-plane deflection of the bulged film, was 3-dimensionally visualized using 4-bucket phase shifting algorithm and least square phase unwrapping algorithm. The bulge pressure for loading and unloading was controlled at a constant rate. From the pressure-deflection curve measured by this testing system, ain-plane stress-strain curve could be determined. In this study, elastic modulus of an electrolytic copper film 18 ${\mu}m$ was determined. The modulus was calculated from determining the plain-strain biaxial elastic modulus at the respective unloading slopes of the stress-strain curve and for the Poisson's ratio of 0.34.

• 전기학회논문지
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• 제56권8호
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• pp.1436-1440
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• 2007

Beryllium copper has been known to be an important material for the various fields of industry because it can be used for mechanical and electrical/electronic components that are subjected to elevated temperatures (up to $400^{\circ}C$ for short times). Blade type tip for probing the cells of liquid crystal display(LCD) was fabricated using beryllium copper foil. The dry film resist was employed as a mask for patterning of the blade type tip. The beryllium copper foil was etched using hydrochloric acidic iron-chloride solution. The concentration, temperature, and composition ratio of hydrochloric acidic iron-chloride solution affect the etching characteristics of beryllium copper foil. Nickel with the thickness of $3{\mu}m$ was electroplated on the patterned copper beryllium foil for enhancing its hardness, followed by electroplating gold for increasing its electrical conductivity. Finally, the dry film resist on the bridge was removed and half of the nickel was etched to complete the blade type tip.

• 한국재료학회지
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• 제11권5호
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• pp.413-418
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• 2001

황산구리 전해욕에 분산제인 콜리이달 실리카($SiO_2$현탁액)를 첨가시키는 분산도금의 방법을 이용하여 음극에 석출하는 전해 석출물의 결정구조, 표면형상, 결정방향 등의 변화를 검토하였고 내식성, 물리적 특성 또한 조사하였다. 콜로이달 실리카를 분산시킨 구리 전해욕의 석출피막의 특성에 대해서 조사한 결과, 다음과 같은 결론을 얻었다. 전해 석출피막의 결정입자가 미세화 되고, 균일하게 성장됨은 물론, 결정 수가 증가하였으며, 콜로이달 실리카의 분산 효과에 의해서 전해 석출피막의 경도가 대략 16%까지 상승하였다. 또한 콜로이달 실리카를 분산시킨 극리 전착층의 X-선 회절패턴이 (111)면, (200)면과 (311)면이 거의 소멸되어 우선 방위가 (111)에서 (110)면으로 변화되었다. 부식전위의 측면에서도 콜로이달 실리카의 흡착 효과에 의해서 구리 전착층의 전위가 귀하게 이동하는 효과를 얻을 수 있었다.

• 한국진공학회지
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• 제13권2호
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• pp.72-78
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• 2004

TaN막 위에 magnetron sputtering으로 증착 시킨 Cu seed 막을 Cu 전해도금을 하기에 앞서 ECR plasma 장치로 전처리 세정하였다. 이때 Cu 막을 200∼$500^{\circ}C$로 변화시키면서 알곤 또는 질소 분위기에서 RTA(rapid themal annealing) 방법으로 열처리하였다. Cu seed 막 위에 전해도금법으로 형성한 Cu 막을 열처리했을 때 미세구조와 물리적 특성변화를 XRD(x-ray diffraction), EBSD(electron back-scattered diffraction), AFM(atomic force microscopy) 분석을 이용하여 조사하였다. $400^{\circ}C$보다 높은 온도에서 재결정이 일어났으며, 열처리 온도를 증가함에 따라 Cu막의 비저항이 감소하고 (111) 우선배향성이 증가하는 경향을 나타냈다. 최소의 비저항과 부드러운 표면 및 (111) 배향성이 뛰어난 Cu막을 얻기 위한 최적의 열처리 조건은 $400^{\circ}C$의 질소분위기에서 120초간 RTA처리를 하는 것으로 판단된다. 이 조건하에서 전해도금된 Cu막의 비저항(resistivity)과 표면 거칠기(surface roughness)는 각각 1.98$\mu$O-cm 및 17.77nm였다.

• 대한의생명과학회지
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• 제28권3호
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• pp.195-199
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• 2022

The use of copper antibacterial films as an effective infection prevention method is increasing owing to its ability to reduce the risk of pathogen transmission. In this study, we evaluated the bacterial contamination of the antibacterial copper membrane attached to a door handle at a university over time. Six mounting locations with high floating population were selected. In three sites, the door handles with the antibacterial film were exposed, while the remaining three were not attached with the antibacterial films. On days 7 and 14, isolated bacterial strains were inoculated in BHI broth and agar, respectively. Colony-forming units (CFU) were determined after incubation. Strain identification was performed using bacterial 16s rRNA PCR and sequencing. Results showed that the bacterial population on day 14 significantly increased from 6 × 10⁹ CFU/mL (day 7) to 2 × 10¹⁰ CFU/mL. Furthermore, strain distribution was not different between the on and off the copper antibacterial film groups. In conclusion, although copper has an antibacterial activity, microbial contamination may occur with prolonged use.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.