• 전기화학회지
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• 제4권4호
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• pp.160-165
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• 2001

황산원자를 포함하는 mercapto화합물은 도금시 전착속도를 증가시키는 첨가제로 알려져 있는데, 이 중 4가지의 mercapto 화합물을 선정하여 농도를 변화시켜가며 Hull cell test, Haring-Blum cell test, cathodic polarization, EQCM(Electrochemical Quartz Crystal Microbalance)등을 이용하여 도금특성 및 throwing power를 알아보았다. Cathode polarization 및 EQCM을 통한 구리 전착량을 알아본 결과 4가지의 mercapto 화합물 중 3-mercapto-1-propanesulfonic acid가 activator로서 가장 적당하였으며, 그 농도가 20 ppm에서 throwing power를 증가시키고, 농도 및 활성 과전압이 오직 $Cl^-$만 포함되었을 때보다 cathodic scan시 100 mV 만큼 shift되어 증착속도를 증가시킴을 알 수 있었다.

• 대한치과교정학회지
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• 제35권2호
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• pp.127-136
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• 2005

광도 차이를 보이지 않았지만 전기도금한 선재 (p<0.001). 스테인레스스틸 선재 (p <0.05). 구리 (p<0.001) 는 배지만을 첨가한 경우보다 통계적으로 유의한 흡광도 감소를 보였다 ISO 10993, part 5에 따라 구리는 "강한 독성"을 보이는 반면 티타늄과 스테인레스스틸 선재는 "무독성". 그리고 전기도금 선재는 "중등도 독성"으로 나타났다 이상의 결과는 전기도금을 이용하여 교정용 선재의 직경을 증가시키는 방법이 임상에 적용되기 위해서는 세포독성을 줄이기 위한 추가의 연구가 필요함을 시사하였다.

• Bulletin of the Korean Chemical Society
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• 제23권10호
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• pp.1394-1398
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• 2002

A novel copper(II) membrane electrode based on diphenylisocyanate bis(acetylacetone) ethylenediimine (DIBAE), as a new hexadentates Schiff's base was prepared. The electrode exhibited a Nernstian response for Cu$^{2+}$ ions over a wide concentration range (1.0 ${\times}$ 10$^{-1}$ to 1.0 ${\times}$ l0$^{-6}$ M) with a limit of detection of 6.0 ${\times}$ 10$^{-7}$ M (39 ppb). The sensor shows a fast response time (15s) and the membrane can be used for more than 4 months without observing any major deviation. The electrode revealed very good selectivity with respect to many cations including alkali, alkaline earth, transition and heavy metal ions. The proposed sensor could be used in a pH range of 3.0-7.5. It was applied to the direct potentiometric determination of copper in black tea, and in wastewater of copper electroplating samples. The electrode was also used in potentiometric titration of the copper(II) ion with EDTA.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.139-140
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• 2002

This paper discusses the effect of plating condition on the mechanical property of electroplated Cu film. Current density, the amount of the organic additives was found to affect the residual stress of electroplated copper film. The result show that, in the case of residual stress, the copper film deposited at higher additive result in lower residual stress and plating current by $15mA/cm^2$ induced a better result than any other ones.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권3호
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• pp.182-188
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• 2001

A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

• 한국표면공학회지
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• 제43권1호
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• pp.1-6
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• 2010

The effect of organic additives, 1-(3-sulfoproyl)-2-vinylpyridineium hydroxide (SVH) and thiourea (TU), on the precision copper electrodeposition was investigated with optical, electrochemical and x-ray diffraction techniques. It was found that SVH played a r ole as a n accelerator and TU as an i nhibitor during the electroreduction of cupric ions in acidic Cu electroplating solution. Through electrochemical measurements, TU showed more strong interaction with cupric ions than SVH and dominated overall Cu electroplating process when both additives were present in the solution. In the case of three dimensional Cu electrodeposition on the 20 ${\mu}m$-patterned Ni substrates, SVH controlled the upright growth of Cu electrodeposits and so determined its flatness, while TU prohibited the lateral spreading of Cu in the course of pulse-reverse pulse current adaptation. With microscopic observation, we obtained the optimum organic additives composition, that is, 100 ppm SVH and 200 ppm TU during the current pulsation.

• Journal of Welding and Joining
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• 제31권3호
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• pp.11-16
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• 2013

Through-silicon-via (TSV) is a major technology in microelectronics for three dimensional high density packaging. The 3-dimensional TSV technology is applied to CMOS sensors, MEMS, HB-LED modules, stacked memories, power and analog, SIP and so on which can be employed to car electronics. The copper electroplating is widely used in the TSV filling process. In this paper, the various Cu filling methods using the control of the plating process were described in detail including recent studies. Via filling behavior by each method was also introduced.

• 한국표면공학회지
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• 제28권3호
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• pp.164-173
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• 1995

Based on the potential-theory model for secondary current distribution, we could predict the thickness distributions of electroplating on patterned substrates with the different size of the auxiliary electrode. The substrates contain lithographic patterns at each sample geometry. Each sample geometry had different current distribution at the same condition except the size of the auxiliary electrodes. The size effect of the auxiliary electrode on thickness distribution of electrodeposition on patterned electrode was investigated in a series of experiments. Copper was galvanostatically deposited from an acid-sulfate solution in a reciprocating paddle cell. The thickness distributions of the workpiece scale measured by profilometry across the specimen were in good agreement with the current distribution predicted by boundary element method.

• 공업화학
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• 제27권1호
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• pp.21-25
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• 2016

리드프레임에 구리합금소재를 사용할 경우 구리이외의 고농도의 철, 니켈, 아연 등이 포함되며 여기서 발생되는 에칭폐액은 지정폐기물로 지정되어 있다. 따라서 본 연구에서는 전기도금용 산화구리(II)를 제조하기 위해 고농도 중금속을 함유한 리드프레임 에칭폐액의 맞춤형 정제과정을 설계하였다. 리드프레임 에칭폐액의 경우 중금속 함유량이 높아 이온교환수지법 단독으로는 중금속을 제거하는데 한계가 있었다. 따라서 본 연구에서는 물에 대한 용해도차를 이용한 환원-산화법을 연계하여 염화구리(I)을 제조한 후 산화제인 과황산나트륨을 이용하여 염화구리(II)로 재회수하는 방법을 사용하였다. 최적 환원제로는 하이드라진을 선택하였고, 최적 첨가량은 구리 1.0 mol당 1.4 mol이다. 환원-산화법과 이온교환수지법을 연결하여 중금속을 제거할 경우 3회 반복 시 $Fe^{3+}$ (4.3 ppm), $Ni^{2+}$ (2.4 ppm), $Zn^{2+}$ (0.78 ppm)로 전기도금용 산화구리(II) 제조용 원료로 사용이 가능할 것으로 사료된다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.95-99
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• 2008

반도체 소자의 소형화에 따라 낮은 비저항을 가진 구리가 ULSI의 금속배선으로 사용되고 있다. 구리선의 비저항은 RC delay와 집적회로의 신호전달에 영향을 미치게 된다. 본 논문에서는 전기도금 된 구리박막의 비저항에 대해 전해액이 미치는 영향을 조사하였다. 4탐침 표면저항측정기로 비저항을 평가하였고, XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope), XPS (X-ray Photoelectron Spectroscopy)로 박막의 특성을 조사하였다. 실험한 결과, 전해액의 조건이 전기도금으로 증착된 낮은 비저항을 갖는 구리박막의 형성에 있어 중요한 역할을 하는 것을 확인하였다.