• 한국산업융합학회 논문집
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• 제20권2호
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• pp.149-155
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• 2017

Mechanical properties of carbon coated $SiC_f/SiC$ composites have been investigated, in conjunction with a detailed analysis of microstructure. Especially, the fracture behavior of $SiC_f/SiC$ composites by the induction of carbon coating layers has been examined. The matrix region of $SiC_f/SiC$ composites with ultra-fine SiC powders were consolidated by a liquid phase sintering (LPS) process, using a sintering additive of $Al_2O_3-Y_2O_3$ powder compound. In this composite, plain and satin- woven Tyranno SA fabrics were also utilized as a reinforcing material. A carbon interfacial layer was coated around satin-woven SiC fabrics. The characterization of LPS-$SiC_f/SiC$ composites was investigated by means of SEM and three point bending test.

• Journal of Electrochemical Science and Technology
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• 제9권4호
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• pp.282-291
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• 2018

The pristine fluorine-doped $SnO_2$ (abbreviated as FTO) inverse opal (IO) was developed using a 410 nm polystyrene bead template. The nanolayered copper tungsten oxide ($CuWO_4$) was decorated on the FTO IO film using a facile electrochemical deposition, subsequently followed by annealing at $500^{\circ}C$ for 90 min. The morphologies, crystalline structure, optical properties and photoelectrochemical characteristics of the FTO and $CuWO_4$-decorated FTO (briefly denoted as $FTO/CuWO_4$) IO film were investigated by field emission scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and electrochemical impedance spectroscopy, showing FTO IO in the hexagonally closed-pack arrangement with a pore diameter and wall thickness of about 300 nm and 20 nm, respectively. Above this film, the $CuWO_4$ was electrodeposited by controlling the cycling number in cyclic voltammetry, suggesting that the $CuWO_4$ formed during 4 cycles (abbreviated as $CuWO_4$(4 cycles)) on FTO IO film exhibited partial distribution of $CuWO_4$ nanoparticles. Additional distribution of $CuWO_4$ nanoparticles was observed in the case of $FTO/CuWO_4$(8 cycles) IO film. The $CuWO_4$ layer exhibits triclinic structure with an indirect band gap of approximately 2.5 eV and shows the enhanced visible light absorption. The photoelectrochemical (PEC) behavior was evaluated in the 0.5 M $Na_2SO_4$ solution under solar illumination, suggesting that the $FTO/CuWO_4$(4 cycles) IO films exhibit a photocurrent density ($J_{sc}$) of $0.42mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE, denoted as $V_{RHE}$), while the FTO IO and $FTO/CuWO_4$(8 cycles) IO films exhibited a $J_{sc}$ of 0.14 and $0.24mA/cm^2$ at $1.23V_{RHE}$, respectively. This difference can be explained by the increased visible light absorption by the $CuWO_4$ layer and the favorable charge separation/transfer event in the cascading band alignment between FTO and $CuWO_4$ layer, enhancing the overall PEC performance.

• 센서학회지
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• 제18권6호
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• pp.417-422
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• 2009

The problems associated with the synthesis, characterization and application of $SnO_2$-Au nanocomposites for the optimization of conductometric gas sensors have been discussed in this report. Nanocomposites have been synthesized on the surface of $SnO_2$ films using successive ionic layer deposition(SILD) method. It has been shown that the proposed approach to surface modification of metal oxide films is an excellent method for the optimization of the operating characteristics of $SnO_2$-based gas sensors, being developed for the detection of reducing gases as well as ozone.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.289-295
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• 2014

${\alpha}-V_2O_5$ nanorods were grown by means of electron beam irradiation and thermal oxidation methods and the visible emission properties of the nanorods grown by both methods were investigated. The growth and crystallinity of the nanorods were greatly enhanced by the insertion of a buffer layer. The emission spectra of the nanorods grown by thermal oxidation and electron beam irradiation showed a peak centered at 710~720 nm, which is believed to be due to oxygen vacancies introduced during the growth process. Also, the emission peak centered at 530 nm observed in the $V_2O_5$ nanorods grown by electron beam irradiation was considered to be due to the band edge transition as a result of the enhanced crystallinity.

• Current Photovoltaic Research
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• 제11권3호
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• pp.67-74
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• 2023

The earth-abundant element-based Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (V_oc) and short circuit current density (J_sc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

• 센서학회지
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• 제23권5호
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• pp.291-294
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• 2014

In this study, a chemiresistive sensor based on one-dimensional $WO_3$ nanostructures is presented for application in non-invasive medical diagnostics. $WO_3$ nanostructures were used as an active gas sensing layer and were deposited onto a $SiO_2/Si$substrate using Pt interdigitated electrodes (IDEs). The IDE spacing was $5{\mu}m$ and deposition was performed using RF sputter with glancing angle deposition mode. Pt IDEs fabricated by photolithography and dry etching. In comparison with thin film sensor, sensing performance of nanostructure sensor showed an enhanced response of more than 20 times when exposed to 50 ppm acetone at $400^{\circ}C$. Such a remarkable faster response can pave the way for a new generation of exhaled breath analyzers based on chemiresistive sensors which are less expensive, more reliable, and less complicated to be manufactured. Moreover, presented sensor technology has the potential of being used as a personalized medical diagnostics tool in the near future.

• 마이크로전자및패키징학회지
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• 제29권1호
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• pp.71-75
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• 2022

Graphene oxide를 ZnCl₂:NaCl 전해질과 함께 교반한 후 순환 전압전류법에 의해 전기화학적으로 제막하여 유기태양전지용 전자수송층 제막과정을 단순화하고 이를 갖는 유기태양전지를 제작하였다. 소자의 구조는 FTO/ZnO:graphene 전자수송층/P3HT:PCBM 광활성층/PEDOT:PSS 정공수송층/Ag이다. ETL의 형태 및 화학적 특성은 주사전자현미경(scanning electron microscopy, SEM), X선 광전자 분광법(X-ray photoelectron spectroscopy, XPS), 라만 분광법으로 확인하였다. XPS 측정결과 ZnO 금속산화물 및 탄소결합이 동시에 확인되었고, 라만 분광법에서 ZnO와 graphene 피크를 확인하였다. 제작한 태양전지의 전기적 특성을 솔라시뮬레이터로 측정하였고 0.05 V/s의 속도로 2회 제막한 ETL 소자에서 1.94%의 가장 높은 광전변환효율을 나타내었다.

• 전기화학회지
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• 제16권3호
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• pp.157-161
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• 2013

다공성 $LiMn_{0.6}Fe_{0.4}PO_4$ (LMFP)를 졸-겔법을 이용하여 합성하였고, 원료물질을 양론비로 혼합한 후 혼합물을 $600^{\circ}C$에서 10시간 동안 가열하여 입자 표면 전체에 전도성 탄소물질이 균일하게 형성된 LMFP을 제조하였다. LMFP의 결정구조는 리트펠트법에 의해 조사하였고, 표면구조와 기공특성은 주사전자현미경, 투과전자현미경, BET로 분석하였다. 제조된 LMFP는 표면적이 크고, 입자 표면에는 웹(web) 형태의 다공성 탄소층이 균일하게 형성되어 있는 것을 확인하였다. 상온에서 LMFP를 양극으로 사용하여 0.1 C의 전류밀도에서 초기방전용량은 152 mAh/g, 에너지밀도는 570 Wh/kg로 높았고 사이클 성능도 장기적으로 안정적이었다. 졸-겔법에 의해 제조된 LMFP는 높은 기공도와 균일한 탄소코팅에 의한 시너지효과로 이온확산이 용이하여 우수한 전기화학적 특성을 나타내었다.

• 한국지구과학회지
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• 제43권4호
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• pp.498-510
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• 2022

Cloud-aerosol interactions are one of the paramount but least understood forcing factors in climate systems. Generally, an increase in the concentration of aerosols increases the concentration of cloud droplet numbers, implying that clouds tend to persist for longer than usual, suppressing precipitation in the warm boundary layer. The cloud lifetime effect has been the center of discussion in the scientific community, partly because of the lack of cloud life cycle observations and partly because of cloud problems. In this study, the precipitation susceptibility (S_o) matrix was employed to estimate the aerosols' effect on precipitation, while the non-aerosol effect is minimized. The S_o was calculated for the typical coupled, well-mixed maritime stratocumulus decks and giant cloud condensation nucleus (GCCN) seeded clouds. The GCCN-artificially introduced to the marine stratocumulus cloud decks-is shown to initiate precipitation and reduces S_o to approximately zero, demonstrating the cloud lifetime hypothesis. The results suggest that the response of precipitation to changes in GCCN must be considered for accurate prediction of aerosol-cloud-precipitation interaction by model studies

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.