• Title/Summary/Keyword: Conventional photo-lithography

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External Cavity Lasers Composed of Higher Order Gratings and SLDs Integrated on PLC Platform

  • Shin, Jang-Uk;Oh, Su-Hwan;Park, Yoon-Jung;Park, Sang-Ho;Han, Young-Tak;Sung, Hee-Kyung;Oh, Kwang-Ryong
    • ETRI Journal
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    • v.29 no.4
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    • pp.452-456
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    • 2007
  • Very compact 4-channel 200-GHz-spacing external cavity lasers (ECLs) were fabricated by hybrid integration of reflection gratings and superluminescent laser diodes on a planar lightwave circuit chip. The fifth-order gratings as reflection gratings were formed using a conventional contact-mask photo-lithography process to achieve low-cost fabrication. The lasing wavelength of the fabricated ECLs matched the ITU grid with an accuracy of ${\pm}0.1$ nm, and optical powers were more than 0.4 mW at the injection current of 80 mA for all channels. The ECLs showed single mode operations with more than 30 dB side lobe suppression.

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Optical Properties of Long Wave Infrared Spoof Plasmon using Hexagonal Periodic Silver Hole Arrays

  • Lee, Byungwoo;Kwak, Hoe Min;Kim, Ha Sul
    • Applied Science and Convergence Technology
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    • v.25 no.2
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    • pp.42-45
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    • 2016
  • A two-dimensional metal hole array (2DMHA) structure is fabricated by conventional photo-lithography and electron beam evaporation. The transmittance of the 2DMHA is measured at long wave infrared (LWIR) wavelengths (${\lambda}{\sim}10$ to $24{\mu}m$). The 2DMHA sample shows transmittance of 70 and 67% at $15.4{\mu}m$ due to plasmonic resonance with perforated silver and gold thin films, respectively, under surface normal illumination at LWIR wavelengths. The measured infrared spectrum is separated into two peaks when the size of the hole becomes larger than a half-pitch of the hole array. Six degenerated plasmon modes (1,0) at the metal/Si surface split to three modes at an incident beam angle of $45^{\circ}$ with respect to the surface normal direction, and wavelength shifts of the transmitted spectrum are observed in a red shift and blue shift at the same time.

Interfacial Behavior of Water Droplet on Micro-Nano Structured Surfaces (마이크로-나노 구조가 있는 표면에서의 액적 계면 거동 현상에 대한 연구)

  • Kwak, Ho Jae;Yu, Dong In;Kim, Moo Hwan;Park, Hyun Sun;Moriyama, Kiyofumi;Ahn, Ho Sun;Kim, Dong Eok
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.39 no.5
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    • pp.449-453
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    • 2015
  • Recently, surfaces with micro and nano structures are the focus of various research and engineering fields to enhance wetting characteristics of the surfaces. Hydrophilic surfaces with hierarchical structures are generally characterized by the interfacial behavior of water droplets. In this study, the interfacial behavior of water droplets is experimentally investigated considering the scale of structures. Using the dry etching and conventional lithography method, quantitative hierarchical structured surfaces are developed. The behavior of the liquid-vapor interface on the test sections is visualized using an automatic goniometer and a high-speed camera. On the basis of the visualized data, the interfacial behavior of water droplets is intensively investigated according to surface geometrical characteristics.

Poly-Si Thin Film Transistor with poly-Si/a-Si Double Active Layer Fabricated by Employing Native Oxide and Excimer Laser Annealing (자연 산화막과 엑시머 레이저를 이용한 Poly-Si/a-Si 이중 박막 다결정 실리콘 박막 트랜지스터)

  • Park, Gi-Chan;Park, Jin-U;Jeong, Sang-Hun;Han, Min-Gu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.1
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    • pp.24-29
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    • 2000
  • We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

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The Removal Of Voids In The Grooved Interfacial Region Of Silicon Structures Obtained With Direct Bonding Technique (홈구조 실리콘 접합 경계면에서의 Void 제거를 위한 실리콘 직접접합 방법)

  • Kim, Sang-Cheol;Kim, Eun-Dong;Kim, Nam-Kyun;Bahna, Wook;Soo, Gil-Soo;Kim, Hyung-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.310-313
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    • 2002
  • Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.

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UV-nanoimprint Patterning Without Residual Layers Using UV-blocking Metal Layer (UV 차단 금속막을 이용한 잔류층이 없는 UV 나노 임프린트 패턴 형성)

  • Moon Kanghun;Shin Subum;Park In-Sung;Lee Heon;Cha Han Sun;Ahn Jinho
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.4 s.37
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    • pp.275-280
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    • 2005
  • We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

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Self Assembled Patterns of Ag Using Hydrophobic and Hydrophilic Surface Characteristics of Glass (유리기판의 친수.소수 상태 변화를 이용한 자기정렬 Ag Pattern 형성 연구)

  • Choo Byoung-Kwon;Choi Jung-Su;Kim Gun-Jeong;Lee Sun-Hee;Park Kyu-Cang;Jang Jin
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.354-359
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    • 2006
  • Recently, the interest in lithography without photo exposure has been increased compare to the conventional photolithography in nano meter and micrometer size patterning area. We studied a self aligned dipping of Ag solution through micro contact printing (${\mu}-CP$) with octadecyltrichlorosilane (OTS) treated polydimethylsiloxane (PDMS) soft mold. The OTS monolayer on the patterned PDMS was formed by dipping it into OTS solution. We transferred the OTS monolayer from PDMS mold to the glass. The OTS monolayer changed the surface energy from hydrophilic surface to hydrophobic surface, And then we made self aligned Ag solution patterns just after dipping the substrate, using adhesion difference of Ag solution between OTS treated hydrophobic area and non-OTS treated hydrophilic area. We finally get the Ag patterns through only dip-coating after the ${\mu}-CP$ process. And we observed surface energies on the glass substrate through the contact angle measurements as time goes on.

Fabrication of Non Viral Vector for Drug and Gene Delivery using Particle Replication In Non-Wetting Templates (PRINT) Technique (Particle Replication In Non-Wetting Templates (PRINT) 방법을 이용한 약물 및 유전자 전달체의 제작)

  • Park, Ji-Young;Gratton, Stephanie;Benjamin, Maynor;Lim, Jomg Sung;Desimone, Joseph
    • Korean Chemical Engineering Research
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    • v.45 no.5
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    • pp.493-499
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    • 2007
  • Polymeric hydrogel particles were fabricated to demonstrate the scale-up possibilities with the Particle Replication In Non-wetting Templates (PRINT) process. A permanently etched, specifically designed master was made on a silicon wafer using conventional photolithography, then reactive ion etching. The master and substrate were used repeatedly to make a large number of identical elastomeric perfluoropolyethers (PFPE) replica molds. The PFPE replica molds were used to fabricate and harvest individual, monodisperse micron-sized particles using the PRINT process. A water-soluble polymer adhesive was used as a sacrificial layer for harvesting particles. Particles were composed of biodegradable poly (ethylene glycol) diacrylate (PEG-diA), and aminoethylacrylate (AEM) and 2-acryloxyethyltrimethyl ammonium chloride (AETMAC) were added to them for improving the uptake of the cells. This study suggested PRINT used to produce the uniformed and shape specific biodegradable polymer is the effective technique for the non viral vector for the drug and the gene delivery.

Fabrication of Size-Controlled Hole Array by Surface-Catalyzed Chemical Deposition (표면 촉매 화학 반응을 이용한 크기 조절이 가능한 홀 어레이 제작)

  • Park, Hyung Ju;Park, Jeong Won;Lee, Dae-Sik;Pyo, Hyeon-Bong
    • Journal of Sensor Science and Technology
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    • v.27 no.1
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    • pp.55-58
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    • 2018
  • Low-cost and large-scale fabrication method of nanohole array, which comprises nanoscale voids separated by a few tens to a few hundreds of nanometers, has opened up new possibilities in biomolecular sensing as well as novel frontier optical devices. One of the key aspects of the nanohole array research is how to control the hole size following each specific needs of the hole structure. Here, we report the extensive study on the fine control of the hole size within the range of 500-2500 nm via surface-catalyzed chemical deposition. The initial hole structures were prepared via conventional photo-lithography, and the hole size was decreased to a designed value through the surface-catalyzed chemical reduction of the gold ion on the predefined hole surfaces, by simple dipping of the hole array device into the aqueous solution of gold chloride and hydroxylamine. The final hole size was controlled by adjusting reaction time, and the optimal experimental condition was obtained by doing a series of characterization experiments. The characterization of size-controlled hole array was systematically examined on the image results of optical microscopy, field emission scanning electron microscopy(FESEM), atomic-force microscopy(AFM), and total internal reflection microscopy.

Characterization of GaN epitaxial layer grown on nano-patterned Si(111) substrate using Pt metal-mask (Pt 금속마스크를 이용하여 제작한 나노패턴 Si(111) 기판위에 성장한 GaN 박막 특성)

  • Kim, Jong-Ock;Lim, Kee-Young
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.3
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    • pp.67-71
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    • 2014
  • An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.