• Title/Summary/Keyword: Controlled crystallization

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Development of New Polymer Powders for the Industrial SFF system by using SLS Process (SLS 공정을 이용한 산업용 SFF 시스템용 신소재 고분자분말 개발)

  • Bang, Young-Kil;Choi, Ki-Seop;Park, Chang-Hyun;Kim, Hyung-Il;Lim, Byung-Seok;Kim, Dong-Soo
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1404-1409
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    • 2007
  • Polymers for laser sintering were needed in order to fabricate the articles with the three-dimensional duplication equipment of SLS (selective laser sintering) process. The thermal properties, particle size, distribution, and shape of polymer powder had a close relation with the processibility of laser sintering. In this study, we prepared new polymer powders with uniform size and higher bulk density by wet process. Wet process consists of several finely-controlled steps such as dissolution, nucleation, propagation and crystallization. Several additives were added to improve the thermal, rheological, and flow properties.

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Co-sputtering of Microcrystalline SiGe Thin Films for Optoelectronic Devices

  • Kim, Seon-Jo;Kim, Hyeong-Jun;Kim, Do-Yeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.64.2-64.2
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    • 2011
  • Recently, Silicon Germanium (SiGe) alloys have been received considerable attention for their great potentials in advanced electronic and optoelectronic devices. Especially, microcrystalline SiGe is a good channel material for thin film transistor due to its advantages such as narrow and variable band gap and process compatibility with Si based integrated circuits. In this work, microcrystalline silicon-germanium films (${\mu}c$-SiGe) were deposited by DC/RF magnetron co-sputtering method using Si and Ge target on Corning glass substrates. The film composition was controlled by changing DC and RF powers applied to each target. The substrate temperatures were changed from $100^{\circ}C$ to $450^{\circ}C$. The microstructure of the thin films was analyzed by x-ray diffraction (XRD) and Raman spectroscopy. The analysis results showed that the crystallinity of the films enhances with increasing Ge mole fraction. Also, crystallization temperature was reduced to $300^{\circ}C$ with $H_2$ dilution. Hall measurements indicated that the electrical properties were improved by Ge alloying.

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Evolution of temperature gradients during rolling of $Cu_{54}Ni_6Zr_{22}Ti_{18}$ bulk metallic glass in the super cooled liquid region (Cu기 비정질 합금의 과냉각 액상구간에서 온간 압연시 Roll 온도의 영향)

  • Park, E.S.;Lee, J.H.;Kim, H.J.;Bae, J.C.;Huh, M.Y.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.409-412
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    • 2006
  • Bulk metallic glass (BMG) strips of $Cu_{54}Ni_6Zr_{22}Ti_{18}$ were produced by warm rolling of the amorphous powder canned with copper. Controlling of temperatures of the rolled sample and rolls was essential for the successive rolling process. Because improper controlling of the sample temperature gave rise to the crystallization of BMG loading to the catastrophic fracture of BMG strips, the temperature of rolls should be properly controlled for achieving successful powder rolling of BMG. The variations of the strain state and temperature in the roll gap was simulated by the finite element method(FEM) using various roll temperatures.

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The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process

  • Lee, Sang-Jin;Yang, Joon-Young;Hwang, Kwang-Sik;Yang, Myoung-Su;Kang, In-Byeong
    • Journal of Information Display
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    • v.8 no.4
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    • pp.15-18
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    • 2007
  • In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

Deformation Behavior of $CU_{54}Ni_6Zr_{22}Ti_{18}$ Bulk Amorphous Alloy during Multi-Pass Warm Rolling (동계 벌크 아몰퍼스의 다단 온간 압연시 변형 거동)

  • Park E. S.;Kim H. J.;Bae J. C.;Huh M. Y.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.10a
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    • pp.139-142
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    • 2005
  • Cu-Ni-Zr-Ti bulk amorphous thin strips were produced by multi-pass warm rolling of the amorphous powder at temperatures in the supercooled liquid region. Process variables for rolling of the bulk amorphous strips were properly controlled to prevent onset of crystallization and failure during rolling up to three passes. During rolling of the amorphous powder, both the deformation and densification took place and the newly developed surface on the deformed amorphous particles enhances the consolidation leading to an increase in the strength. The strain state during rolling was analyzed by FEM.

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Sequential Lateral Solidification Process for Fabrication of Crystalline Silicon Thin Film Transistor (단결정 실리콘 TFT 제작을 위한 SLS 공정)

  • Lee, Youn-Jae;Pak, Jung-Ho
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.461-463
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    • 2000
  • This paper presents a low temperature excimer-laser-crystallization that produces directionally solidified microstructure in Si thin films. The process involves (1) a complete melting of selected area via irradiation through a patterned mask. and (2) a precisely controlled pulse translation of the sample with respect to the mask over a distance shorter than the superlateral growth(SLG) distance. (3) lateral growth extended over a number of iterative steps. Grains that grow continuously to the vertical direction were demonstrated. We discuss sequential lateral solidification principle, experiment.

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Phase Changes of Vanadium Oxide Thin Films (산화 바나듐 박막의 상변화)

  • 선우진호;신인하;고경현;안재환
    • Journal of the Korean institute of surface engineering
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    • v.25 no.6
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    • pp.293-298
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    • 1992
  • Various vanadium-oxide thin films were deposited by e-beam and thermal evaporation of V2O5, V2O3, and VO2 powders. Films with thickness of $2000\AA$ were subjected to annealing at $300^{\circ}C$~$450^{\circ}C$ in N2 atmosphere for the crystallization and desification purposes. For the films deposited from V2O5 and VO2 sources, sources, Magneli (VnO2n-1$ 4\leq$ $n\leq$ 8) and VO2 phase appeared at $300^{\circ}C$, respectively, but VO2 phase also transformed into Magneli phase at $450^{\circ}C$ by severe reduction. On the contrary, VO2/VO mixed phases resulted from congruent evaporation of V2O3 unchanged after the same annealing treatment due to the balanced reduction and oxidation of VO2 and VO whcih have different equilibrium O2 pressures. It is suggested that the annealing in the controlled oxidation atmosphere or the deposition using mixed oxide sources are necessary to get the film containing VO2 phase.

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An-isotropic Corrosion Behavior of A Marine Steel with Cold Rolling

  • Yang, So E.;Song, Churl H.;Choi, Ga Yeon;Choi, Yong;Choe, Jin I.;Jung, Hwan G.;Kho, So W.;Lee, Chang S.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.330-330
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    • 2012
  • Microstructure of a marine steel with a modified AISI-1004 composition was controlled by cold rolling and heat treatment, which corrosion behavior in an artificial sea water was electrochemically determined for the each deformation direction. The lowest corrosion rate of the surface normal to the rolling direction is related t the (111) fiber structure. Additional annealing at $550^{\circ}C$ for 24 hours improves the corrosion rate which is related to re-crystallization and reduction of (111) concentration.

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Preparation of TiO2 Nanotube Arrays from Thin Film Grown by RF Sputtering

  • Kim, Chang Woo
    • Applied Science and Convergence Technology
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    • v.27 no.5
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    • pp.105-108
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    • 2018
  • Transparent $TiO_2$ nanotube arrays are successfully prepared by a two-step approach involving electrochemical anodization and RF magnetron sputtering. First, a Ti film is deposited on an FTO substrate by RF magnetron sputtering at room temperature. The morphologies of the Ti film are controlled by the working distance, Ar flow, and DC power. Second, an anodization treatment is electrochemically performed for the formation of nanotube arrays from the deposited Ti film, followed by post-annealing treatment in air for the formation of $TiO_2$ crystallization. The back side of the crystallized $TiO_2$ nanotube arrays is illuminated with solar light to characterize the photoelectrochemical reaction, and their photoelectrochemical properties are investigated. This work provides information on application of a thin film deposited by RF sputtering in the field of photoelectrochemical water splitting.

Electron Beam Effects on Lignin Stabilization during Carbonization

  • Lee, Byoung-Min;Kang, Phil-Hyun;Jeun, Joon-Pyo
    • Journal of Radiation Industry
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    • v.7 no.2_3
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    • pp.167-170
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    • 2013
  • Lignin can be a valuable natural chemical resource. Structurally, lignin is a three-dimensional polymer made up of condensed C-C bonds and some ether linkages, most of which are not readily degraded. In this study, lignin carbonization under various electron beam pretreatment conditions was characterized through a thermogravimetric analysis (TGA), X-ray diffraction (XRD) and Raman spectroscopy. Lignin stabilization was controlled by various doses of electron beam irradiation corresponding to 50, 100, 200, 500 and 1,000 kGy; the carbonization process was performed under a nitrogen gas atmosphere at $1000^{\circ}C$ for 1 h. The TGA results showed that a 1,000 kGy lignin dose increased the residue weight from 39.96% to 45.23%, compared to non-irradiated lignin. This observation is in agreement with the XRD and Raman spectroscopy results, in which the two theta degrees and the degree of crystallization were improved by increasing the electron beam irradiation.