• Title/Summary/Keyword: Contact resistance

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A Study on the Thermal Contact Resistance Evaluation for Fin-Tube Heat Exchangers (핀-관 열교환기에서의 접촉열저항 평가에 관한 연구)

  • Jeong, J.;Kim, C.N.;Youn, B.;Gil, S.H.;Yang, J.S.
    • Proceedings of the KSME Conference
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    • 2000.11b
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    • pp.291-296
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    • 2000
  • Usually the contact between fin collar and tube surface for fin-tube heat exchanger is secured by mechanical expansion of the tubes. The objective of the present study is to develop a method of measuring the thermal contact resistance between fin collar and tube surface for fin-tube heat exchanger. Also an experimental work has been performed to evaluate the thermal contact resistance, and a rigorous numerical analysis has been employed to calculate the contact resistance from the measured data. The experiments have been conducted fur the fin-tube heat exchangers with the tube of outer diameters 7 and 9.52 mm.

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Investigation of the Ni/Cu metallization for high-efficiency, low cost crystlline silicon solar cells (고효율, 저가화 실리콘태양전지를 위한 Ni/Cu/Ag 금속전극의 특성 연구)

  • Lee, Ji-Hun;Cho, Kyeng-Yeon;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
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    • 2009.04a
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    • pp.235-240
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    • 2009
  • Crystlline silicon solar cells markets are increasing at rapid pace. now, crystlline silicon solar cells markets screen-printing solar cell is occupying. screen-printing solar cells manufacturing process are very quick, there is a strong point which is a low cost. but silicon and metal contact, uses Ag & Al pates. because of, high contact resistance, high series resistance and sintering inside process the electric conductivity decreases with 1/3. and In pastes ingredients uses Ag where $80{\sim}90%$ is metal of high cost. because of low cost solar cells descriptions is difficult. therefore BCSC(Buried Contact Solar Cell) is developed. and uses light-induced plating, ln-line galvanization developed equipments. Ni/Cu matel contact solar cells researches. in Germany Fraunhofer ISE. In order to manufacture high-efficiency solar cells, metal selections are important. metal materials get in metal resistance does small, to be electric conductivity does highly. efficiency must raise an increase with rise of the curve factor where the contact resistance of the silicon substrate and is caused by few with decrement of series resistance. Ni metal materials the price is cheap, Ti comes similar resistance. Cu and Ag has the electric conductivity which is similar. and Cu price is cheap. In this paper, Ni/Cu/Ag metal contact cell with screen printing manufactured, silicon metal contact comparison and analysis.

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Effects of Contact Conditions on the Connector Electrical Resistance of Direct Current Circuits

  • Kim, Young-Tae;Sung, In-Ha;Kim, Jin-San;Kim, Dae-Eun
    • International Journal of Precision Engineering and Manufacturing
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    • v.5 no.3
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    • pp.5-10
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    • 2004
  • Electric contacts serve the purpose of transmitting electric signals across two conducting components. In this paper, the effects of contact conditions such as surface roughness, oxidation, and contamination were investigated with respect to electrical resistance variation of a connector in a direct current circuit. Such change in the electrical resistance is particularly important for low power circuits. The experimental results showed that compared with the effects of contact surface scratch or oxidation, the effect of contamination on the resistance variation was the most significant. In order to minimize failure due to electrical resistance change at the contact region, proper sealing to prevent contamination from entering the interface is needed.

Investigation on Contact Resistance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors with Various Electrodes by Transmission Line Method

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.3
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    • pp.139-141
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    • 2015
  • Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.

Contact resistance characteristics of 2G HTS coils with metal insulation

  • Sohn, M.H.;Ha, H.;Kim, S.K.
    • Progress in Superconductivity and Cryogenics
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    • v.20 no.4
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    • pp.26-30
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    • 2018
  • The turn-to-turn contact resistance of 2G high temperature superconducting (HTS) coils with metal insulation (MI) is closely related to the stability of the coils, current charging rate and delay time [1]. MI coils were fabricated using five kinds of metal tapes such as aluminum (Al) tape, brass tape, stainless steel (SS) tape, copper (Cu)-plated tape and one-sided Cu-plated SS tape. The turn-to-turn contact surface resistances of co-winding model coils using Al tape, brass tape, and SS tape were 342.6, 343.6 and $724.8{\mu}{\Omega}{\cdot}cm^2$, respectively. The turn-to-turn contact resistance of the model coil using the one-sided Cu-plated SS tape was $ 248.8{\mu}{\Omega}{\cdot}cm^2$, which was lower than that of Al and brass tape. Al or brass tape can be used to reduce contact resistance and improve the stability of the coil. Considering strength, SS tape is recommended. For strength and low contact resistance, SS tape with copper plating on one side can be used.

Contact Resistance and Thermal Cycling Reliability of the Flip-Chip Joints Processed with Cu-Sn Mushroom Bumps (Cu-Sn 머쉬룸 범프를 이용한 플립칩 접속부의 접속저항과 열 싸이클링 신뢰성)

  • Lim, Su-Kyum;Choi, Jin-Won;Kim, Young-Ho;Oh, Tae-Sung
    • Korean Journal of Metals and Materials
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    • v.46 no.9
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    • pp.585-592
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    • 2008
  • Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

Analysis of the Bounce Phenomenon According to the Load of the Relay Contact (릴레이 접점의 부하에 따른 바운스 현상 분석)

  • Choi, Sun-Ho;Kim, Kwan-Sik;Ryu, Jae-Man;Huh, Chang-Su
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.2
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    • pp.115-119
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    • 2015
  • The power relay can be easily controlled with high voltage and current through the contacts. For this reason, has become widely used range in a variety of applications. In this study, we measured the contact resistance between the bouncing phenomenon of contact due to the change of load. The results of the experiment, the contact resistance increases with the deterioration of the contact, it is possible to predict the life of the relay contacts through the contact resistance. And relay bounce duration time have occurred in 3.5 ms or less. In addition, it is possible to use the results to design an arc suppression circuit device.

Analysis on Metal Contact Resistance and Grain Boundary Barrier Height of Ceramic PTC Thermistor (Ceramic PTC thermistor의 금속접촉저항과 입계전위장벽)

  • Jeon, Yong-Woo;Lim, Byung-Jae;Hong, Sang-Jin;Soh, Dea-Wha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.235-236
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    • 2006
  • The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

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Investigation of the Contact Resistance Between Amorphous Silicon-Zinc-Tin-Oxide Thin Film Transistors and Different Electrodes Using the Transmission Line Method

  • Lee, Byeong Hyeon;Han, Sangmin;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.1
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    • pp.46-49
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    • 2016
  • A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×102 Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm2 V−1s−1, S.S of 0.9 Vdecade−1, and on/off current ratio of 9.7×106 A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

Estimation of Heat Generation in Multi-Contact Connector for Superconducting Magnet Application (초전도자석 시스템 응용을 위한 멀티-컨텍 커넥터의 열 발생 특성 평가)

  • Kim, M.S.;Choi, Y.S.;Kim, D.L.;Lee, Y.A.
    • Progress in Superconductivity
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    • v.14 no.2
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    • pp.122-127
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    • 2012
  • Current leads are one of the important components for carrying the current to the coil in the superconducting magnet system. Heat leakage through the current lead is the major factor of entire heat load in the cryogenic system because current leads carry the current from room temperature to near 4 K, connecting thermally each other. Therefore, minimization heat load through current lead can reduce the operating temperature of superconducting magnet. The semi-retractable current lead, composed of multi-contact connector and HTS element, is one of good options. Comprehension of Multi-contact connector's structure, contact resistance and heat generation is essential for estimating heat generation in current leads. Multi-contact connector has several louvers inside of socket and the shape, number, size of louvers are different with the size of connector. Therefore contact area, current path and contact resistance are also different. In this study, the contact resistance in multi-contact connector is measured using the electrical power as a function of connector's size and temperature. Also, the unique correlation of electrical contact resistance is derived and heat generation is estimated for superconducting magnet application.