• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.

• 스마트미디어저널
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• 제5권3호
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• pp.25-29
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• 2016

본 논문에서는 인체의 전자기장을 측정하는 EPS(Electronic Potential Sensor)를 이용하여 비접촉 동작인식 시스템에 적용하기 위한 연구를 진행하였다. 센서에서 나오는 데이터를 이용하여 동작인식에 적합한 시스템을 설계하기 위한 신호 수집 및 신호처리 시스템을 구현하였다. AC 형태의 입력 데이터 값에 10Hz LPF(Low Pass Filter) 및 H/W 샘플링 속도를 고려하여 선형적인 DC 형태의 데이터로 변형하였다. 센서간의 배열을 고려한 데이터 차분 과정을 통해 목표물의 2차원 움직임 정보를 추출하여 전체 시스템에 대한 특성평가를 수행하였다.

• International Journal of Automotive Technology
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• 제8권3호
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• pp.275-281
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• 2007

GTL (Gas To Liquid) has the potential to be used in diesel engines as a clean alternative fuel due to advantages in emission reduction, particularly soot reduction. Since the physical properties of GTL fuel differ from those of diesel fuel to some extent, studying how this difference in characteristics of GTL and diesel fuels affects spray and combustion in diesel engines is important. In this study, visual investigation of sprays and flames from GTL and diesel fuels in a vessel simulating diesel combustion was implemented. The effects of various parameters and conditions, such as injection pressure, chamber temperature and pilot injection on liquid-phase fuel length and auto-ignition delay were investigated. It was determined that GTL has a somewhat shorter liquid-phase fuel length, which explains why there is less contact between the fuel liquid-phase and flame for GTL fuel compared to diesel fuel.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.323-329
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• 2017

This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.75-78
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• 2000

This paper is estimated to enhance yield improvement and device reliability using PDM(plasma damage monitoring) system capable of in-suit detection about plasma nonuniformity. PDM Tool is the non-contact method of wafer and surface potential electrode(kelvin probe). Its tool measures Vox(oxide barrier) with charge created by plasma. It's possible to inspect the wafer damage generated by plasma charge and analysis of in-situ monitoring data. we obtained the good data which is continuously prevented from plasma damage using its tool for 10weeks. This tool is contributed to preventive steps contemporaneously inspecting the difference of inter-chamber.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2004년도 추계학술대회논문집
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• pp.600-605
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• 2004

In many machines handling lightweight and flexible media such as magnetic tape drives, xerographic copiers and sewing machines, the media must transit an open space. It is important to predict the static and dynamic behavior of the sheets with a high degree of reliability. The nonlinear theory of the dynamic elastica has often been used to a nonlinear dynamic deflection model. In this paper, the governing equation is derived and simulated by the finite differential method. The parametric cubic curve is applied for defining the guide shape. The dynamic contact conditions suggested by Klarbring is used to predict the direction of the flexible media according to the initial velocity and the friction coefficient. The analysis is also compared to the conventional model, showing that after contacting a $45^{\circ}$ wall, the directions of flexible media of two models are different.

• 한국소음진동공학회논문집
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• 제15권2호
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• pp.206-212
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• 2005

In many machines handling lightweight and flexible media, such as magnetic tape drives, xerographic copiers and sewing machines, the media must transit an open space. It is important to predict the static and dynamic behavior of the sheets with a high degree of reliability. The nonlinear theory of the dynamic elastica has often been used to a nonlinear dynamic deflection model. In this paper, the governing equation is derived and simulated by the finite difference method. The parametric cubic curve is applied for defining the guide shape. The dynamic contact conditions suggested by Klarbring is used to predict the direction of the flexible media according to the initial velocity and the friction coefficient. The analysis is also compared to the conventional model, showing that after contacting a $45^{\circ}$ wall, the directions of flexible media of two models are different.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 대한치과보철학회지
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• 제36권5호
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• pp.701-720
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• 1998

Research advances in dental implantology have led to the development of several different types of materials and it is anticipated that continued research will lead to advanced dental implant materials. Currently used pure titanium has relatively low hardness and strength which may limit its ability to resist functional loads as a dental implant. Ti-6Al-4V also has potential problems such as corrosion resistance. osseointegration properties and neurologic disorder due to aluminium and vanadium, known as highly toxic elements, contained in Ti-6Al-4V. Newly developed titanium based alloys(Ti-20Zr-3Nb-3Ta-0.2Pd-1In, Ti-20Zr-3Nb-3Ta-0.2Pd) which do not contain toxic metallic components were designed by the Korea Institute of Science and Technology (KIST) with alloy design techniques using Zr, Nb, Ta, Pd, and In which are known as non-toxic elements. Biocompatibility and osseointegration properties of these newly designed alloys were evaluated after implantation in rabbit femur for 3 months. The conclusions were as follows : 1. Mechanical properties of the new designed Ti based alloys(Ti-20Zr-3Nb-3Ta-0.2Pd-1In, Ti-20Zr-3Nb-3Ta-0.2Pd) demonstrated close hardness and tensile strength values to Ti-6Al-4V. 2. New desinged experimental alloys showed stable corrosion resistance similar to the pure Ti but better than Ti-6Al-4V. However, the corrosion rate was higher for the new alloys. 3. Cell culture test showed that the new alloys have similar cell response compared with pure Ti and Ti-6Al-4V with no cell adverse reaction. 4. New designed alloys showed similar bone-metal contact ratio and osseointegration properties compared to pure Ti and Ti-6Al-4V after 3 months implantation in rabbit femur. 5. Four different surface treatments of the metals did not show any statistical difference of the cell growth and bone-metal contact ratio.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.120-131
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• 2007

A comprehensive short channel analytical model has been proposed for High Electron Mobility Transistor (HEMT) to obtain higher cut-off frequency maintaining the reliability of the device. The model has been proposed to consider generalized doping variation in the directions perpendicular to and along the channel. The effect of field plates and different gate-insulator geometry (T-gate, etc) have been considered by dividing the area between gate and the high band gap semiconductor into different regions along the channel having different insulator and metal combinations of different thicknesses and work function with the possibility that metal is in direct contact with the high band gap semiconductor. The variation obtained by gate-insulator geometry and field plates in the field and channel potential can be produced by varying doping concentration, metal work-function and gate-stack structures along the channel. The results so obtained for normal device structure have been compared with previous proposed model and numerical method (finite difference method) to prove the validity of the model.