• Geophysics and Geophysical Exploration
• /
• v.5 no.1
• /
• pp.23-32
• /
• 2002

Capacitively-coupled resistivity (CCR) system is known to be very useful where galvanic contact to earth is impossible, such as the area covered with thick ice, snow, concrete or asphalt. This system injects current non-galvanically, i.e., capacitively to earth through line antenna and measures potential difference in a same manner. We derived geometric factor for two types of antenna configuration and presented the method of processing and converting the data obtained with CCR system suitable to conventional resistivity inversion analysis. The CCR system, however, has limitations on use at conductive area or electrically noisy area since it is very difficult to inject sufficient current to earth with this system as with conventional resistivity system. This causes low SM ratio when acquiring data with CCR system and great care must be taken in acquiring data with this system. Additionally the uniform contact between line antennas and earth is also crucial factor to obtain good S/N ratio data. The CCR method, however, enables one to perform continuous profiling over a survey line by dragging entire system and thus will be useful in rapid investigation of conductivity distribution in shallow subsurface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.4
• /
• pp.298-302
• /
• 2010

We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.5
• /
• pp.253-256
• /
• 2017

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

• Electrical & Electronic Materials
• /
• v.8 no.5
• /
• pp.619-625
• /
• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• Journal of the Korean Geophysical Society
• /
• v.2 no.4
• /
• pp.259-268
• /
• 1999

Electrical resistivity surveys were conducted in the areas between Buji-ri and Seoak-dong, and between Nawon-ri and Yangdong-ri, Kyongju in order to investigate the geoelectric structure of the nothren part of the Yangsan Fault. In the area between Buji-ri and Seoak-dong south of Kyongju, the fracture zone east of the inferred fault develops more deeply, without significant north-south variation in depth, than west. In the area between Nawon-ri and Yangdong-ri north of Kyongju, the fault zone seems to be developed along the Hyungsan-river, and the resistivity structure west of the river is more affected by the fracture zone than east. Interpreted section of dipole-dipole survey conducted in Homyung-ri shows vertical contact of the Yangsan Fault. It appears that the boundary between the northern and central segment of the Yangsan Fault is located in the north of study areas since there is no significant variation in electrical resistivity structure near Kyongju.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.112-114
• /
• 2001

In this letter, we report on the investigation of Si/Ti, Pt/Si/Ti, Co/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $550^{\circ}C$ for 5 min, $850^{\circ}C$ for 2 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific $10^{-4}{\Omega}cm^2$, and the physical properties of the contactcontact resistivities in the $9.2{\times}10^{-4}$, $7.1{\times}10^{-4}$ and $4.5{\times}s$ were examined using microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt, Co had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.39.2-39.2
• /
• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• Proceedings of the Korean Society For Composite Materials Conference
• /
• 2003.04a
• /
• pp.117-120
• /
• 2003

Electro-micromechanical techniques were applied using four-probe method for carbon nanotube (CNT) or nanofiber (CNF)/epoxy composites with their content. Carbon black (CB) was used to compare with CNT and CNF. The fracture of carbon fiber was detected by nondestructive acoustic emission (AE) relating to electrical resistivity for double-matrix composites test. Sensing for fiber tension was performed by electro-pullout test under uniform cyclic strain. The sensitivity for fiber damage such as fiber fracture and fiber tension was the highest for CNT/epoxy composites, and in CB case they were the lowest compared with CNT and CNF. Reinforcing effect of CNT obtained from apparent modulus measurement was the highest in the same content. The results obtained from sensing fiber damage were correlated with the morphological observation of nano-scale structure using FE-SEM. The information on fiber damage and matrix deformation and reinforcing effect of carbon nanocomposites could be obtained from electrical resistivity measurement as a new concept of nondestructive evaluation.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.25 no.6
• /
• pp.108-114
• /
• 2011

In order to mitigate the possible hazards from electric shock due to the touch and step voltages, the high resistivity material such as gravel is often spread on the earth's surface in substations. When the grounding electrode is installed in two-layer soil structures, the surface layer soil resistivity is different with the resistivity of the soil contacted with the grounding electrodes. The design of large-sized grounding systems is fundamentally based on assuring safety from dangerous voltages within a grounding grid area. The performance of the grounding system is evaluated by tolerable touch and step voltages. Since the floor surface conditions near equipment to be grounded are changed after a grounding system has been constructed, it may be difficult to determine the tolerable touch and step voltage criteria. In this paper, to propose an accurate and convenient method for evaluating the protective performance of grounding systems, the propriety of the method for evaluating the current flowing through the human body around on a counterpoise buried in two-layer soils is presented. As a result, it is reasonable that the grounding system performance would be evaluated by measuring and analyzing the current flowing through the human body based on dangerous voltages such as the touch or step voltages and the contact resistance between the ground surface and feet.

• Journal of the korean society of oceanography
• /
• v.36 no.1
• /
• pp.1-8
• /
• 2001

An in-situ four-electrode contact resistivity probe system was designed, and field-tested in submarine sediments. Seismic survey was also performed to support and compare the results of electric survey. The probe was designed to be driven to selected depths below the seafloor using a Vibracore system. The four insulated electrodes were, spaced equidistant across the wedge, were extended beyond the probe tip to minimize effects of sediment disturbance by the wedge insertion. In-situ measurements of resistivity were recorded on board by precision electronic equipment consisting of signal generators and processors, and by temperature-monitoring systems. Overall limits of Uncertainty at respective depths below the seafloor are up to ${\pm}$10 of the measured values. Best estimates of conductivity are considered to be ${\pm}$3 percent of the reported values. Resistivity measurements were made at six sites in carbonate sediments to a maximum depth of penetration of about 5 m. Average values of conductivity range between 0.88 and 1.21 mho/m. The results show the seabed is composed of alternating layers of relatively high-conductivity material (0.8 to 1.4 mho/m) in thicknesses of more or less one meter and layers about 30 cm thick having relatively low conductivities (0.4 to 0.8 mho/m).