• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3268-3270
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• 1999

This paper presents the fabrication of a micro electromagnetic flowmeter for liquid flow rate measurement. The flowmeter consists of a silicon flow channel with two electrodes and two permanent magnets. The micro flow channel and the detection electrodes are fabricated by the anisotropic etching of two silicon substrates and the metal evaporation process respectively. If conductive fluid passes through a magnet field, electromotive force is generated and detected by two electrodes. When the flow rate is 2.6 ml/sec, the measured output voltage is 7.4 mV.

• The Korean Journal of Physiology and Pharmacology
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• 제19권1호
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• pp.73-79
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• 2015

Connexins (Cx) are membrane proteins and monomers for forming gap junction (GJ) channels. Cx46 and Cx50 are also known to function as conductive hemichannels. As part of an ongoing effort to find GJ-specific blocker(s), endocrine disruptors were used to examine their effect on Cx46 hemichannels expressed in Xenopus oocytes. Voltage-dependent gating of Cx46 hemichannels was characterized by slowly activating outward currents and relatively fast inward tail currents. Bisphenol A (BPA, 10 nM) reduced outward currents of Cx46 hemichannels up to ~18% of control, and its effect was reversible (n=5). 4-tert-Octylphenol (OP, $1{\mu}M$) reversibly reduced outward hemichannel currents up to ~28% (n=4). However, overall shapes of Cx46 hemichannel current traces (outward and inward currents) were not changed by these drugs. These results suggest that BPA and OP are likely to occupy the pore of Cx46 hemichannels and thus obstruct the ionic fluxes. This finding provides that BPA and OP are potential candidates for GJ channel blockers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1453-1454
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• 2011

We have investigated the effect of silicon contents (0~0.4 molar ratios) on the performance of solution processed silicon-indium-zinc oxide (SIZO) thin-film transistors (TFTs). Despites its solution processed channel layer, low annealed temperature below $200^{\circ}C$ in air has been used for SIZO-TFTs. The $V_{th}$ is shifted from -4.04 to 5.15 V as increasing Si ratio in the SIZO-TFTs. The positive shift of $V_{th}$ as increasing Si contents in SIZO system indicates that Si suppresses the carrier generation in the active channel layer since $V_{th}$ is defined as the voltage required accumulating sufficient charge carriers to form a conductive channel path.

• 대한기계학회논문집B
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• 제26권7호
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• pp.1022-1030
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• 2002

The experiments were performed with a $31{\times}31{\times}7mm^3$ simulated 3-dimensional module on the thermal conductive board of a parallel plate channel. The convective thermal conductance for the path from the module surface directly to airflow and conjugate thermal conductance for the path leading from the module to the floor by way of a module support, then, to the airflow were determined with several combinations of module-support-construction(210, 0.32, 0.021 K/W)/floor-material(398, 0.236W/mK) and channel height(15-30mm). As the result, it was found that the conjugate thermal conductance and the temperature distribution around the module depend on the thermal resistance of the module support, and the channel height. These configurations were designed to investigate on the feasibility of using the substrate as an effective heat spreader in the forced convective air-cooling of surface mounted heat source. The experimental results were discussed in the light of interactive nature of heat transfer through two paths, one directed from the module to the airflow and the other via the module support and the floor to the air.

• 태양에너지
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• 제19권3호
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• pp.29-41
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• 1999

본 연구에서는 돌출된 단일 모듈이 부착된 수직 채널내의 3차원 자연대류 특성을 실험적으로 조사하였으며, 특히 모듈로부터 대류에 의한 열에너지 제거에 초점을 두었다. 채널내의 유동장은 smoke-method를 이용하여 가시화 하였다. 또한 채널내부, 수직벽면 및 모듈표면의 국소온도를 열전대와 열플럭스 센서를 이용하여 측정하여 복사와 전도에의한 열손실량을 계산하였다. 실험결과 대류열전달은 모듈 하부의 모서리 부근에서 가장 활발히 일어나고, 모듈 상부에서의 재순환영역은 열전달을 감소시킴을 알 수 있으며 임계 채널간격비를 예측할 수 있는 상관식을 레일리히수의 함수로 구하였다. 또한 $8.28{\times}10^3<Ra^*_c<3.48{\times}10^6$의 범위에서 수정 채널 레일리히수의 함수로써 평균 누셀트수와의 상관식을 구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.875-881
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• 2004

Fundamental results obtained from an atomic force microscope (AFM) chemically-induced direct nano-lithography process are presented, which is regarded as a simple method for fabrication nm-scale devices such as superconducting flux flow transistors (SFFTs) and single electron tunneling transistors (SETs). Si cantilevers with Pt coating and with 30 nm thick TiO coating were used as conducting AFM tips in this study. We observed the surfaces of superconducting strip lines modified by AFM anodization' process. First, superconducting strip lines with scan size 2 ${\mu}{\textrm}{m}$${\times}$2 ${\mu}{\textrm}{m}$ have been anodized by AFM technology. The surface roughness was increased with the number of AFM scanning, The roughness variation was higher in case of the AFM tip with a positive voltage than with a negative voltage in respect of the strip surface. Second, we have patterned nm-scale oxide lines on ${YBa}-2{Cu}_3{O}_{7-x}$ superconducting microstrip surfaces by AFM conductive cantilever with a negative bias voltage. The ${YBa}-2{Cu}_3{O}_{7-x}$ oxide lines could be patterned by anodization technique. This research showed that the critical characteristics of superconducting thin films were be controlled by AFM anodization process technique. The AFM technique was expected to be used as a promising anodization technique for fabrication of an SFFT with nano-channel.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.315-316
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• 2002

Electrochemical discharge machining is a very recent technique for non-conducting materials such as ceramics and glasses. ECDM is conducted in the NaOH solution and the cathode electrode is separated from the solution by $H_2$ gas bubble. Then the discharge is appeared and the non-conductive material is removed by spark and some chemical reactions. In the ECDM technology, the $H_2$ bubble control is the most important factor to stabilize the discharging condition. In this paper, we proposed the discharge peak monitoring/ discharging duty feedback algorithms for the discharge stabilization and the feasibility of this algorithm is verified by various pattern machining in the constant preload conditions for the cathode electrode.

• KSTLE International Journal
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• 제3권2호
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• pp.95-100
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• 2002

Electrochemical discharge machining is a very recent technique for non-conducting materials such as ceramics and glasses. ECDM is conducted in the NaOH solution and the cathode electrode is separated from the solution by H$_2$ gas bubble. Then the discharge is appeared and the non-conductive material is removed by spark and some chemical reactions. In the ECDM technology, the H$_2$ bubble control is the most important factor to stabilize the discharging condition. In this paper we proposed the discharge peak monitoring/discharging duty feedback algorithms fur the discharge stabilization and the feasibility of this algorithm is verified by various pattern machining in the constant preload conditions for the cathode electrode.