• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.686-692
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• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.1
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• pp.61-69
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• 2005

The topology of NPC inverter coupled with the large number of devices used increases the probability of device failure. It's necessary to develop an optimal remedial strategy which can be used to continue the application when fault occurs. The fault tolerance is obtained by the use of the proposed method. The proposed method utilizes that the one phase load with the failed power device could be connected to the center-tap of the DC-link capacitor in order to dc-link voltage with balance and the sinusoidal phase current with constant amplitude under the single power device fault condition. The strategy described in this paper is expected to provide an economic alternative to more expensive redundancy techniques.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.973-979
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• 2001

Tin-doped indium oxide (ITO) thin films were deposited using r.f. magnetron reactive sputtering and the electrical properties, such as the resistivity, carrier concentration and mobility, were investigated as a function of the sample position under a given magnetron sputtering condition. The nonhomogeneity of the electrical properties with the sample position was observed under a given magnetron sputtering condition. The resistivity of ITO thin film on the substrate which corresponded to the center of the target had a minimum value, 2∼4$\times$10$\^$-4/$\Omega$$.$cm, and it increased symmetrically when the substrate deviated from the center. The density measurement result also showed that ITO thin film deposited at the center has a maximum density of 7.0g/cm$^3$, which was a relative density of about 97%, and the density decreased symmetrically as the substrate deviated from the center. The nonhomogeneity of electrical properties with the deposition position could be explained with the incidence angle of the source beam alpha, which is related with an atomic self-shadowing effect. It was confirmed experimentally that the density in film affect both the carrier mobility and the conductivity. In the case where the density of ITO thin film is 7.0g/cm$^3$, the magnitude of the mean free path was identical with that of the grain size(the diameter of column). However, in the other cases, the mean free path was smaller than the grain size. These results showed that the scattering of the free electrons at the grain boundary is the major factor for the electrical conduction in ITO thin films having a high density, and there exists other scattering sources such as vacancies, holes, or pores in ITO thin films having a low density.ing a low density.

• Fire Science and Engineering
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• v.33 no.2
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• pp.30-38
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• 2019

Tracking, which is one of the main causes of electrical fires, is perceived as a physical phenomenon of electrical discharge. Hence tracking should be explained based on electric field analysis, conduction path by electron generation, and gas discharge physics. However, few papers have considered these details. This paper proposes a tracking mechanism including their effects on tracking progress. In order to prove this mechanism, a tracking experiment, an electric field analysis for the carbonization evolution model, and an explanation of the tracking process by gas discharge physics were conducted. From the tracking experiment, the current waveforms were measured at each stage of the tracking progress from corona discharge to tracking breakdown. The electric field analysis was carried out in order to determine the electric field on the surface of a dry-band and the high electric field region for electron generation during the generation and progress of carbonization. In this paper, the proposed tracking mechanism consisted of six stages including electron avalanche by corona discharge, accumulation of positive ions, expansion of electron avalanche, secondary electron emission avalanche, streamer, and tracking by conductive path. The pulse current waveforms measured in the tracking experiment can be explained by the proposed tracking mechanism. The results of this study will be used as the technical data to detect tracking phenomenon, which is the cause of electric fire, and to improve the proof tracking index.

• Korean Journal of Optics and Photonics
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• v.26 no.3
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• pp.168-171
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• 2015

The heat flow characteristics of a high-power optical semiconductor source have been analyzed using a 3D CFD commercial tool, and the thermal resistance values for each of the layers revealed the places for thermal bottlenecks to be improved. As the heat source of a LD (Laser Diode) has a small volume and a narrow surface, the effective thermal cross-sectional area near it is also quite small. It was possible to expand the cross-sectional area effectively by using graphene layers on the TIM (Thermal Interface Material) layers of a LD chip. The effective values of heat resistance for the layers are compared to confirm the improvement effect of the graphene layers before and after, which can be considered to expand the thermal cross section of the heat transfer path.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.1
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• pp.40-46
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• 2017

We reviewed the electrical properties of SOFC anode manufactured using spherical Ni and nano YSZ powder. When core-shell is fabricated by using submicron Ni as core and nano-sized YSZ as shell for SOFC anode, the electrical conductivity of the $0.2{\mu}m$ Ni-YSZ core-shell was 3 times higher than that of $1.0{\mu}m$ NiO or $1.0{\mu}m$ Ni-YSZ. Hydrogen selectivity was similar at $800^{\circ}C$, but hydrogen selectivity and methane conversion rate under $750^{\circ}C$ was 10~25% higher, Power density was more than 2 times, ASR was about 1/3, when exposed to $H_2$ atmosphere at $750^{\circ}C$ for a long time, Ni particles did not have any growth or cut off conduction path.

• Fire Science and Engineering
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• v.22 no.2
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• pp.44-48
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• 2008

In this paper, we measured a contact angle, surface resistivity and XPS to study the thermal aging characteristics of the epoxy resin for cast resin transformer. As a result of this experiment, we found that the contact angle increases up to $200^{\circ}C$ as it causes a re-crosslinking on the surface, but starts decreasing at $250^{\circ}C$ as it causes heat condensation. As a result of examining the oxygen/carbon peaks through the XPS analysis, we obtained a higher oxygen peak vs. carbon in the first untreated sample, but it showed the opposite trend after heat treatment. That rise in the carbon peak continued up to $200^{\circ}C$, but decreased again at the temperatures above. That's because it kept forming a stable surface structure up to $200^{\circ}C$ but its carbon combination got destroyed due to a rapid oxidization at $250^{\circ}C$. And a conduction path was formed easily with the hydrophile property caused by rapid surface activation.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.281-286
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• 2002

The temperature accelerated dielectric breakdown strength of on-wafer low-k dielectric polymer films with thicknesses ranging from 94 nm to 1141 nm is investigated by using the current-voltage characteristic measurements with MIS structures. The temperature dependence of dielectric strength is demonstrated to be Arrhenious for all thicknesses. However, the activation energy is found to be strongly thickness dependent. It follows an exponential relationship rather than being a single value, i.e., the activation energy increase significantly as film thickness increases for the thickness below 500 nm, but it is almost constant for the thickness above 500 nm. This relationship suggests that the change of the activation energy corresponding to different film thickness is closely related to the temperature dependence of the electron trapping/detrapping process in polymer thin films, and is determined by both the trapping rate and the detrapping rate. Thinner films need less energy to form a conduction path compared to thicker films. Hence, it leads to smaller activation energy in thinner films, and the activation energy increases with the increase in film thickness. However, a nearly constant value of the activation energy is achieved above a certain range of film thickness, indicating that the trapping rate and detrapping rate is almost equal and eventually the activation energy approaches the value of bulk material.