• The Korean Journal of Pharmacology
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• v.22 no.2
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• pp.105-114
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• 1986

This study was undertaken to search for a new antiarrhythmic agent in natural plants. Extracts of Buxus microphylla var. koreana Nakai have been used as folk remedies of several diseases, including malaria and venereal disease, but any study on the pharmacological actions of this plant has not yet been carried out and its active ingredients have not been identified. In our laboratory, we isolated buxuletin (nonalkaloid) and cyclobuxine D (steroidal alkaloid) from Buxus microphylla var. koreana Nakai and reported their pharmacological actions: diuretic effects of buxuletin in rabbits and hypotensive effect of cyclobuxine D in rats. In the present study, we investigated the effect of cyclobuxine D on isolated frog heart and heart rate in urethane anesthetized rats. In order to clarify the mechanism of bradycardic effect of cyclobuxine D, we examined the changes of the ECG parameters (PR, QRS and R ${\alpha}$ T interval) produced by intravenous injection of cyclobuxine D in anesthetized rats. Cyclobuxine D depressed the contractile force in isolated frog heart and exerted a dose-dependent bradycardic effect in anesthetized rats. Intracerebroventricular injection of cyclobuxine D caused a fall in blood pressure and an increase in heart rate, but those effects were not significant. Cyclobuxine D prolonged the PR interval and RaT interval (${\alpha}$ Tindicates the apex of T), but was without significant effects on the duration of the QRS complex and PRc in urethane anesthetized rats.

• Clean Technology
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• v.26 no.4
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• pp.311-320
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• 2020

In this study, the photocatalytic degradation of rhodamine B (RhB), methyl orange (MO) and methylene blue (MB) was carried out under visible light irradiation using CdS and CdZnS/ZnO photocatalysts prepared by a simple precipitation method. This study focused on examining the effect of physicochemical properties of dye and photocatalyst on the reaction pathway of photocatalytic degradation. The prepared photocatalysts were characterized by XRD, UV-vis DRS and XPS. Both the CdS and CdZnS/ZnO photocatalysts exhibit an excellent absorption in the visible light and the UV light regions. It was observed that the photocatalytic degradation of MO proceeds via the same reaction mechanism on both the CdS and CdZnS/ZnO photocatalysts. However, the photocatalytic degradation of RhB and MB was found to proceed through a different reaction pathway on the CdS and CdZnS/ZnO catalysts. It is interesting to note that MB dimer was formed on the CdS catalyst at the beginning of the photocatalytic reaction, while the MB monomer was degraded during the overall photocatalytic reaction on CdZnS/ZnO. The above results may be mainly ascribed to the difference of band edge potential of the conduction band in the CdS and CdZnS/ZnO semiconductors and the adsorption property of dye on the catalysts.

• Tunnel and Underground Space
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• v.31 no.6
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• pp.593-609
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• 2021

We proposed a numerical method for the thermo-mechanical behavior of rock fracture using a grain-based distinct element model (GBDEM) and simulated thermally induced fracture slip. The present study is the benchmark simulation performed as part of DECOVALEX-2023 Task G, which aims to develop a numerical method to estimate the coupled thermo-hydro-mechanical processes within the crystalline rock fracture network. We represented the rock sample as an assembly of Voronoi grains and calculated the interaction of the grains (blocks) and their interfaces (contacts) using a distinct element code, 3DEC. Based on an equivalent continuum approach, the micro-parameters of grains and contacts were determined to reproduce rock as an elastic material. Then, the behavior of the fracture embedded in the rock was characterized by the contacts with Coulomb shear strength and tensile strength. In the benchmark simulation, we quantitatively examined the effects of the boundary stress and thermal stress due to heat conduction on fracture behavior, focusing on the mechanism of thermally induced fracture slip. The simulation results showed that the developed numerical model reasonably reproduced the thermal expansion and thermal stress increment, the fracture stress and displacement and the effect of boundary condition. We expect the numerical model to be enhanced by continuing collaboration and interaction with other research teams of DECOVALEX-2023 Task G and validated in further study experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.275-279
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• 2023

La_0.7Sr_0.3-xMg_xMnO₃ (LSMMO) (x=0.05~0.20) specimens are fabricated by a solid phase sintering method, and the sintering temperature and time are 1,300℃ and 2 hours, respectively. The dependence of the crystalline structure according to the amount of Mg²⁺ contents is not observed, and all specimens show a polycrystalline rhombohedral crystal structure, the X-ray diffraction (110) peaks move to the high angle side with increasing the amount of Mg²⁺ contents. LSMMO specimens exhibit a granule-shaped microstructure with an average grain size of 1 ㎛ or less. Resistivity gradually decrease as the amount of Mg²⁺ contents increased. And in the La_0.7Sr_0.1Mg_0.2MnO₃ specimen, resistivity and B_25/65-value are 36.7 Ω-cm and 394 K at room temperature, respectively. LSMMO specimens show a variable-range hopping (VRH) electrical conduction mechanism, and the negative temperature of coefficient of resistance (NTCR) is approximately 0.37~0.38%/℃.

• Clean Technology
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• v.25 no.1
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• pp.46-55
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• 2019

CdS and CdZnS/ZnO materials were prepared using precipitation method and used as photocatalysts for the photocatalytic degradation of rhodamine B (RhB) under visible light irradiation. The prepared photocatalysts were also characterized by XRD and UV-vis DRS. The results indicated that the photocatalysts with intended crystalline structures were successfully obtained and both the CdS and CdZnS/ZnO can absorb visible light as well as UV. The photocatalytic activities were examined with the addition of scavenger for various active chemical species and the difference of reaction mechanisms over the catalysts were discussed. The $CH_3OH$, KI and p-benzoquinone were used as scavengers for ${\cdot}OH$ radical, photogenerated positive hole and ${\cdot}O_2{^-}$ radical, respectively. The CdS and CdZnS/ZnO showed different photocatalytic degradation mechanisms of RhB. It can be postulated that ${\cdot}O_2{^-}$ radical is the main active species for the reaction over CdS photocatalyst, while the photogenerated positive hole for CdZnS/ZnO photocatalyst. As a result, the predominant reaction pathways over CdS and CdZnS/ZnO photocatalysts were found to be the dealkylation of chromophore skeleton and the cleavage of the conjugated chromophore structure, respectively. The above results may be mainly ascribed to the difference of band edge potential of conduction and valence bands in CdS, CdZnS and ZnO semiconductors and the redox potentials for formation of active chemical species.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.42-49
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• 2011

We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.