• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.1
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• pp.36-44
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• 2014

The conventional central photo voltaic inverters have several problems. First, shadow problem in each solar panel, and high DC voltage problem from each panel because of concentration to one central inverter. Therefore, module integrated inverter is proposed to solve these problems. The inverter should be small and cost effective. The cost and size in the inverter depend on the inductor. So the switching frequency should be increased to reduce the inductor and total size, but there is a problem in efficiency because of the losses in turn-on and turn-off. In the paper, the critical conduction mode(CRM) switching method is adopted to reduce the switching loss and interleaving method is proposed to increase the efficiency in Flyback converter. Finally, the validity of the proposed scheme is investigated with simulated and experimental results for a prototype system rated at 200W.

• Journal of Power Electronics
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• v.4 no.2
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• pp.77-86
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• 2004

This paper presents a novel three-phase power module bridge type auxiliary resonant AC link snubber for the three-phase voltage-fed sinwave soft switching PWM inverter operating under specific instantaneous space voltage vector modulation. The operating principle of this resonant snubber is described for current source load model during one switching period, along with its design approach based on the simulation data. The performance evaluations of space vector modulation three-phase sinewave soft switching inverter with a new three-phase active auxiliary resonant AC link snubber are discussed as compared with those of three-phase voltage source-fed sinewave hard switching PWM inverter with a standard space voltage vector modulation strategy. The power loss analysis and conventional efficiency estimation of three-phase soft switching PWM inverter using ICBT modules are carried out including all the conduction power losses based upon the measured v-i characteristics of IGBT and its antiparallel diode as well as their switching losses.

• Journal of Power Electronics
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• v.9 no.6
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• pp.823-834
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• 2009

This paper proposes a high-efficiency single-stage ac/dc converter. The proposed converter features low voltage stresses and reduced switching losses. It operates at the boundary of discontinuous- and continuous-conduction modes by employing variable switching frequency control. The turn-on switching loss of the switch can be reduced by turning it on when the voltage across it is at a minimum. The voltage across the bulk capacitor is independent of the output loads and maintained within the practical range for the universal line input, so the problem of high voltage stress across the bulk capacitor is alleviated. Moreover, the voltage stress of the output diodes is clamped to the output voltage, and the output diodes are turned off at zero-current. Thus, the reverse-recovery related losses of the output diodes are eliminated. The operational principles and circuit analysis are presented. A prototype circuit was built and tested for a 150 W (50V/3A) output power. The experimental results verify the performance of the proposed converter.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.31-35
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• 2001

IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses. The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers (low on-state) and Medium Voltage Drives (low switching losses). The additional demands of Traction (low operating temperatures) and Current Source Inverters (symmetric blocking) would normally result in conflicting demands on the semiconductor. This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units. Some of the key differences between IGCTs and IGBTs will be explained and the outlook for device improvements will be discussed.

• Journal of Power Electronics
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• v.10 no.5
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• pp.461-467
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• 2010

This paper proposes a new soft-switched Sepic converter. It has low switching losses and low conduction losses due to its auxiliary communicated circuit and synchronous rectifier operation, respectively. Because of its positive and buck/boost-like DC voltage transfer function (M=D/(1-D)), the proposed converter is desirable for use in distributed power systems. The proposed converter has versions both with and without a transformer. The paper also suggests some design guidelines in terms of the power circuit and the control loop for the proposed converter.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.1348-1350
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• 2000

Zero-voltage and zero-current switched single-stage approach with high power factor is presented to reduce the switching losses and to achieve sinusoidal, unity power factor input currents. This single-stage approach, which combines a boost converter used as PFC with a half-bridge converter used as do to do conversion into one power stage, has a simple structure and low cost. At the same time, since the switches of the proposed converter are designed to be turned on at zero-voltage and off at zero-current, the switching losses could be reduced considerably. Detailed analysis and experimental results are presented on the proposed converter, which is operated at constant switching frequency and in discontinuous conduction mode.

• Proceedings of the KIPE Conference
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• 2001.07a
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• pp.211-214
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• 2001

This paper introduces a ZC-ZVS PWM(Pulse-Width -Modulation) boost converter. The IGBT(main switch) of the proposed converter is always switched at ZCS and soft switching of MOSFET(auxiliary switch) as well. Therefore, the proposed converter minimized the turn on/turn off switching losses of switches and reduced conduction losses by using IGBT switch. Moreover, using paralleled IGBT-MOSFET switch overcame the switching frequency limitation. Therefore high power density system can be realized. As mentioned above, the characteristics are verified through experimental results.

• KEPCO Journal on Electric Power and Energy
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• v.4 no.2
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• pp.47-53
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• 2018

VSC technology is now well established in HVDC and is, in many respects, complementary to the older Line Commutated Converter (LCC) technology. Despite the various advantages of VSC technology, VSC HVDC stations have higher power losses than LCC stations. Although the relative advantages and disadvantages are well known within the industry, there have been very few attempts to quantify these factors on an objective basis. This paper describes methods to determine the operating losses of every component in the valve of VSC-HVDC system. The losses of the valve, including both conduction losses and switching losses, are treated in detail.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.4
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• pp.386-393
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• 2000

This paper presents an improved ZVS partial series resonant DC/DC converter (PSRC) with low conduction losses, suitable for high power and high frequency applications. The proposed PSRC have advantages of zero-voltage-switching (ZVS) of main switches for entire load ranges low conduction losses of main switches by decreasing current stresses. Also the reduction of the effective duty cycle is not occurred during the resonant period of the main circuit because the auxiliary circuit of the proposed converter is placed out of the main power path. The auxiliary circuit is composed with passive components, which are an inductor, two capacitors, two diodes, and a saturable inductor. An improved ZVS PSRC has so much characteristics with respect to the overall system efficiency and to the reduction of current stresses. The operation principles of the proposed converter are explained in detail and the various simulated and experimental results show the validity of the proposed converter.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.204-212
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• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.