• Journal of Korean Society of Industrial and Systems Engineering
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• v.26 no.3
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• pp.67-73
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• 2003

Manufacturing technologies of compound semiconductor are similar to the process of memory device, but management technology of manufacturing process for compound semiconductor is not enough developed. Semiconductor manufacturing environment also has been emerged as mass customization and open foundry service so integrated manufacturing system is needed. In this study we design the integrated manufacturing system for compound semiconductor fabrication t hat has monitoring of process, reduction of lead-time, obedience of due-dates and so on. This study presents integrated manufacturing system having database system that based on web and data acquisition system. And we will implement them in the actual compound semiconductor fabrication.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.335-336
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• 2006

Compound semiconductor manufacturing environment also has been emerged as mass customization and open foundry service so integrated manufacturing system is needed. In this study, we design data acquisition system of compound semiconductor fabrication that has monitoring and control of process. The developed DAS is consisted of key-in system inputted by operator and automatic acquisition system by GEM protocol. And we implemented them in the actual compound semiconductor. It is expected that using developed system would offer precise process information to buyer, reduce a lead-time, and obey a due-dates and so on.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.500-506
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• 1999

We designed and fabricated a bidirectional optical transceiver module for low cost access network. An integrated chip forming a pin-PD on an 1.3 urn FP-LD was assembled by flip-chip bonding on a Si optical bench, a single mode fiber with an angled end facet was aligned passively with the integrated chip on V-groove of Si-optical bench. Gaussian beam theory was applied to evaluate the coupling coefficients as a function of some parameters such as alignment distance, angle of fiber end facet, vertical alignment error. The theory is also used to search the bottle-neck between transmittance and receiving coupling efficiency in the bi-directional optical system. Tn this paper, we confirmed that reduction of coupling efficiency by the vertical alignment error between laser beam and fiber core axis can be compensated by controlling the fiber facet angle. In the fabrication of sub-module, a'||'&'||' we made such that the fiber facet have a corn shape with an angled facet only core part, the reflection of transmitted laser beam from the fiber facet could be minimized below -35 dE in alignment distance of 2: 30 /J.m. In the same condition, transmitted output power of -12.1 dEm and responsivity of 0.2. AIW were obtained.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1151-1156
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• 2000

In this paper, we report a fabrication of InP-based microstructurs for III-V compound semiconductor micromachining. Vertical liquid phase epitaxy(LPE) system was used in order to grow the InP/lnGaAsP/InP layers. The thicknesses of InP top-layer and InGaAsP were $1\mum \;and \;0.4\mum$, respectively. The fabrication of InGaAsP microstructures involves front-side bulk micromachining. The experimental result showed the beams must be carefully aligned in the <100> direction since the etching of the beam in the <100> direction is more faster than that of the beam in the <110> and <110> direction.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.447-450
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• 2000

In this paper, we report a fabrication of InP-based microstructurs for III-V compound semiconductor micromachining. Vertical liquid phase epitaxy(LPE) system was used in order to grow the Inp/InGaAsP/InP layers. The thicknesses of InP top-layer and InGaAsP were 1$\mu\textrm{m}$ and 0.4$\mu\textrm{m}$ respectively. The fabrication of InGaAsP microstructures involves front side bulk micromachining. The experimental result showed the beams must be carefully aligned in the <110> direction since the lateral etching of the beam in the <110> direction is more faster than that of the beam in the <100> direction.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.22 no.1
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• pp.52-59
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• 2012

Objectives: The purpose of this study was to evaluate the exposure possibility of by-products during the semiconductor manufacturing processes. Methods: The authors investigated types of chemicals generated during semiconductor manufacturing processes by the qualitative experiment on generation of by-products at the laboratory and a literature survey. Results: By-products due to decomposition of photoresist by UV-light during the photo-lithography process, ionization of arsine during the ion implant process, and inter-reactions of chemicals used at diffusion and deposition processes can be generated in wafer fabrication line. Volatile organic compounds (VOCs) such as benzene and formaldehyde can be generated during the mold process due to decomposition of epoxy molding compound and mold cleaner in semiconductor chip assembly line. Conclusions: Various types of by-products can be generated during the semiconductor manufacturing processes. Therefore, by-products carcinogen such as benzene, formaldehyde, and arsenic as well as chemical substances used during the semiconductor manufacturing processes should be controlled carefully.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.11.1-11.1
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• 2010

As one of the non-vacuum, low temperature fabrication route, electrochemical synthesis has been focused for pursuing the cost-effective pathway to produce high efficiency photovoltaic devices. Especially the availability to form the thin film structure on flexible substrate would be the great advantage of electrochemical process. The successful synthesis of the most favorable absorber materials such as CdTe and CIGS has been reported by many researchers, however, the efficiency of electrochemically synthesized could not exceed that from vacuum process, because of microstructural controllability and compositional variation on devices. In this study, we represent the effect of process parameters on the microstructure and composition of compound semiconductor during the synthesis, and propose the photovoltaic characteristics of electrochemically synthesized solar cells.

• Journal of Radiation Industry
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• v.6 no.1
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• pp.67-73
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• 2012

The development of radiation detection systems mainly consist of two parts-radiation detector fabrication including material development, and its appropriate electronics development. For the core-technology incubation of a radiation detection system, radiation fabrication and an evaluation facility are scheduled to be founded at the RFT (Radiation Fusion Technology) Center at KAERI (Korea Atomic Energy Research Institute) by 2015. This facility is utilized for the development and incubation of bottleneck-technologies to accelerate the industrialization of a radiation detection system in the industrial, medical, and radiation security fields. This facility is also utilized for researchers to develop next-generation radiation detection instruments. In this paper, the establishment of core-technology development is introduced and its technological mission is addressed.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.182-192
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• 2003

A new Monte Carlo (MC) simulator for electron beam lithography process in the multi-layer resists and compound semiconductor substrates has been developed in order to fabricate and develop the high-speed PHEMT devices for millimeter-wave frequencies. For the accurate and efficient calculation of the transferred and deposited energy distribution to the multi-component and multi-layer targets by electron beams, we newly modeled for the multi-layer resists and heterogeneous multi-layer substrates. By this model, the T-shaped gate fabrication process by electron beam lithography in the PHEMT device has been simulated and analyzed. The simulation results are shown along with the SEM observations in the T-gate formation process, which verifies the new model in this paper.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.420-431
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• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.