• 제목/요약/키워드: Compound and Diffusion Layer

검색결과 94건 처리시간 0.023초

INTERFACIAL REACTIONS BETWEEN SN-58MASS%BI EUTECTIC SOLDER AND (CU, ELECTROLESS NI-P/CU)SUBSTRATE

  • Yoon, Jeong-Won;Lee, hang-Bae;Park, Guang-Jin;Shin, Young-Eui;Jung, Seung-Boo
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.487-492
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    • 2002
  • The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

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Open-Tube에서 Zn확산을 이용한 GaAs에의 $p^+$층 형성 (Formation of $P^+-Layer$ in GaAs Using the Open-Tube Diffusion of Zn)

  • 심규환;강진영;민석기;한철원;최인훈
    • 대한전자공학회논문지
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    • 제25권8호
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    • pp.959-965
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    • 1988
  • Zinc diffusion characteristics and its applicabilities have been studied using an open-tube system. Thermal decomposition of arsenide(As) at gallium arsenide(GaAs) wafer surface was well inhibited by using Ga: poly-GaAs: Zn compositon as a diffusion source. Junction depth was obtained as 4.6x10**7\ulcorner exp)-1.25/kT) where activation energy of diffusion was 1.25eV. From Boltzmann-matano analysis, it could be identified that concentration dependencies of Zn diffusivity well consisted with those of kick-out model. The ideality factor of p+-n junction formed by Zn diffusion was about 1.6 and infrared light intensity was linearly varied in the range of sixty folds. It is concluded frodm these results that Zn diffuses according to kick-out model, and open-tube method is applicable to compound semiconductor devices.

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이온 窒化된 SW3코일 스프링의 疲勞擧動에 관한 硏究 (Study on the Fatigue Behavior of Ion-Nitrided SW3 Coil Spring)

  • 염영하;장성대
    • 대한기계학회논문집
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    • 제7권4호
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    • pp.355-360
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    • 1983
  • This paper deals with fatigue behavior of ion-nitrided coil spring. It is found that fatigue limit can be significantly increased by ion-nitriding. Ion-nitribed specimen which is treated at 550.deg. C for 5 hours improves in the fatigue limit by 30 percent in comparison with that of non-nitrided specimen. On the other hand, the value of spring constant K has nothing to do with nitriding time and temperature in this experimental range. Besides fatigue behavior, the following effects are discussed such as compound layer, diffusion layer, hardness distribution and their relations.

Effects of Nano-sized Diamond on Wettability and Interfacial Reaction for Immersion Sn Plating

  • Yu, A-Mi;Kang, Nam-Hyun;Lee, Kang;Lee, Jong-Hyun
    • 마이크로전자및패키징학회지
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    • 제17권3호
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    • pp.59-63
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    • 2010
  • Immersion Sn plating was produced on Cu foil by distributing nano-sized diamonds (ND). The ND distributed on the coating surface broke the continuity of Sn-oxide layer, therefore leading to penetrate the molten solder through the oxide and retarding the wettability degradation during a reflow process. Furthermore, the ND in the Sn coating played a role of diffusion barrier for Sn atoms and decreased the growth rate of intermetallic compound ($Cu_6Sn_5$) layer during the solid-state aging. The study confirmed the importance of ND to improve the wettability and reliability of the Sn plating. Complete dispersion of the ND within the immersion Sn plating needs to be further developed for the electronic packaging applications.

탄소화합물/Polymer Binder 복합체를 이용한 기체확산층 제조 및 성능 평가 (Preparation and Performance Evaluation of Gas Diffusion Layer Made of Carbon Compounds/Polymer Binder Composites)

  • 이지정;최범철;박윤경;이재영;이홍기
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.92.2-92.2
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    • 2011
  • 고분자전해질 연료전지 (PEMFC)의 가격 결정 요인 중 막 전극 접합체 (MEA)가 차지하는 비중은 약 45%정도이며, 이것을 구성하는 주요 부품인 기체 확산층 (GDL)은 carbon paper나 carbon cloth 형태가 사용되고 있다. 그렇지만 GDL을 제조하는 공정은 매우 복잡하고, 그 가격이 너무 높은 단점이 있다. 본 연구에서는 카본블랙, 흑연 등의 탄소화합물과 polymer binder를 이용하여 단순화된 공정으로 GDL을 제조하였다. 또한, GDL의 물리적 특성이 전극 성능에 미치는 영향을 분석하기 위하여 표면 morphology, 접촉각 및 표면에너지, 전기전도도, 기체투과도, porosity, pore distrivution 등을 측정하였고, 각각의 GDL 표면에 동량의 Pt 촉매를 도포하여 MEA를 제작한 후 그 성능을 평가하였다.

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첨단 반도체 패키징을 위한 미세 피치 Cu Pillar Bump 연구 동향 (Recent Advances in Fine Pitch Cu Pillar Bumps for Advanced Semiconductor Packaging)

  • 노은채;이효원;윤정원
    • 마이크로전자및패키징학회지
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    • 제30권3호
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    • pp.1-10
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    • 2023
  • 최근, 고사양 컴퓨터, 모바일 제품의 수요가 증가하면서 반도체 패키지의 고집적화, 고밀도화가 요구된다. 따라서 많은 양의 데이터를 한 번에 전송하기 위해 범프 크기 및 피치 (Pitch)를 줄이고 I/O 밀도를 증가시킬 수 있는 플립 칩 (flip-chip), 구리 필러 (Cu pillar)와 같은 마이크로 범프 (Micro-bump)가 사용된다. 하지만 범프의 직경이 70 ㎛ 이하일 경우 솔더 (Solder) 내 금속간화합물 (Intermetallic compound, IMC)이 차지하는 부피 분율의 급격한 증가로 인해 취성이 증가하고, 전기적 특성이 감소하여 접합부 신뢰성을 악화시킨다. 따라서 이러한 점을 개선하기 위해 UBM (Under Bump Metallization) 또는 Cu pillar와 솔더 캡 사이에 diffusion barrier 역할을 하는 층을 삽입시키기도 한다. 본 review 논문에서는 추가적인 층 삽입을 통해 마이크로 범프의 과도한 IMC의 성장을 억제하여 접합부 특성을 향상시키기 위한 다양한 연구를 비교 분석하였다.

TiAl계 XD45, XD47 금속간 화합물의 고온산화거동 (High Temperature Oxidation of TiAl-based XD 45 and XD47 Intermetallics)

  • 심웅식;이동복
    • 한국표면공학회지
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    • 제35권4호
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    • pp.193-198
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    • 2002
  • Alloys of XD45 (Ti45A12Nb2Mn-0.8vol%TiB$_2$) and XD47 (Ti47A12Nb2Mn-0.8vol%TiB$_2$) were oxidized between 800 and $1000^{\circ}C$ in air, and their oxidation characteristics were studied. The oxide scales consisted primarily of an outer $TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of ($TiO_2$+$Al_2$$O_3$). Nb tended to present at the lower part of the oxide scale, whereas Mn at the upper part of the oxide scale. The Pt marker tests indicated that the outer oxide layer grew primarily by the outward diffusion of Ti and Mn, and the inner mixed layer by the inward transport of oxygen.

이중층 시료에서 확산을 이용한 BiPbAgSrCaCuO 초전도체 개발 및 초전도상 성장기구 (Development of BiPbAgSrCaCuO Superconductor used diffusion of dual layer and The growth mechanism process of superconducting phase)

  • 최성환;강형곤;유현수;유종주;최명호;김민기;최효상;한태희;박성진;황종선;한병성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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    • pp.22-27
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    • 1993
  • we prepared 70K new BiPbAgSrCaCuO superconductor used diffusion of dual layer which composed of SrCaCuO and BiPbAgCuO compound. This method is used permeation and diffusion on partial melting point of BiPbAgCuO compound. Samples were analyzed by means of X-ray diffraction analysis, Thermal analysis, critical temperature and scanning electron microscopy. It was found that the best results were obtained for spread volume (A:B=1:0.6) and sintring time 210hours.

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용융아연도금한 강판의 기술적 성질에 관한 연구 (A Study on Mechanical Properties of Galvanized Steel Plate)

  • 정동원;곽창섭;최종술
    • 한국표면공학회지
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    • 제16권4호
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    • pp.153-159
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    • 1983
  • The growth rate equation of Fe-Zn alloy layer was represented by x = Kt, and hence the growth of alloy layer was considered to be controlled by diffusion process. The constituent of alloy layer formed on the steel surface was identified to be intermetallic compound of Fe3Zn10 and FeZn10. The ultimate tensile strength and elongation of galvanized steel showed a nearly constant value at the thickness below about 30$\mu\textrm{m}$, and both properties decreased with increasing thickness above about 30$\mu\textrm{m}$. In the case of galvanied steel with a great thickness of alloy layer, crack was formed below yield point of base metal, which is considered to be attributed to the alloy layer failure.

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이온질화처리된 AI-Cr-Mo 강의 재가열 처리에 의한 표면조직변화 (Effect of Reheating on the Ion-nitrided Surface Microstructure of AI-Cr-Mo Steel)

  • 이정일;신영식;김문일
    • 열처리공학회지
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    • 제1권1호
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    • pp.1-7
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    • 1988
  • In this study the improvement of mechanical properties of ion-nitrided SACM-1 steel was investigated by analysing microstructural developments and hardness increase in the nitrided surface layer. Specimens were quenched at $570^{\circ}C$, which is lower than the eutectoid temperature ($590^{\circ}C$) of Fe-N binary system after nitrided at temperature of $460-570^{\circ}C$ for 2-8 hours under constant pressure of 8 torr. The depths of diffusion and compound layers were appeared to proportional to the root mean square time of nitriding. And the hardness showed the maximun value Hv = 1200 for the specimen nitrided at $530^{\circ}C$. Hardness distribution of the. ion-nitrided steels were increased by diffusion treatment below the eutectoid temperature of the Fe-N binary system. A prolonged heat treatment below the eutectoid temperature was attributed to the increase in the depth of diffusion layer at the expense of the decrease in surface hardness of the ion nitreded steel.

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