• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.82-89
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• 2007

Glass-ceramics were fabricated by heat-treating a glass at $700^{\circ}C$/10hr which was obtained by melting a glass frit mixed with $40{\sim}80 wt%$ EAF dust at $1300^{\circ}C$/1hr. Dependence of crystal phase and bonding state change upon a compositional change and heat treatment condition were studied and the results was connected to the toxic characterization leaching procedure (TCLP) test data to investigate a chemical durability of the specimens. Increasing dust in a glass shifted the peak around $1000cm^{-1}$ to the lower frequency which was composed of two vibration peaks for the nonbridging oxygen at $960cm^{-1}$ and the bridging oxygen at $1050{\sim}1060cm^{-1}$. Also, the $B_2O_3$ structure of boroxol ring changed to a tetrhedral-, trigonal- and di-borate with dust addition. The Fe-O peaks in the glass-ceramics were observed which is consitent with XRD results of spinel formation. The surface of glass after TCLP test was severely cracked while there was no cracks on a glass-ceramics after TCLP test so the chemical durability of the glass-ceramics is superior than that of glass. The leaching concentration of Fe for the glass-ceramics containing EAF dust 80 wt% is 1/15 times lower than that of glass. The Zn leaching concentration fur the glass-ceramics containing dust < 70 wt% was higher than that of glass but its trend was reversed for the specimen of dust content > 80 wt% which could be concluded as correlated with occurrence of willemite phase.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.81-92
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• 1990

We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as $69,000cm^2/v.sec$ for a sheet carrier density of $5.5{\times}10^{11}cm^-2$ at 15K, and $41,200cm^2/v.sec$ for a sheet carrier density of $6.6{\times}10^{11}cm^-2$ at 77K. In addition, well defined SdH oscillation and quantized Hall plateaues were observed.

• Journal of the Mineralogical Society of Korea
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• v.26 no.2
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• pp.119-127
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• 2013

Borosilicate glass dissolution is an important chemical process that impacts the glass durability as nuclear waste form that may be used for high-level radioactive waste disposal. Experiments reported that the glass dissolution rates are strongly dependent on the bulk composition. Because some relationship exists between glass composition and molecular-structure distribution (e.g., non-bridging oxygen content of $SiO_4$ unit and averaged coordination number of B), the composition-dependent dissolution rates are attributed to the bulk structural changes corresponding to the compositional variation. We examined Na borosilicate glass structures by performing classical molecular dynamics (MD) simulations for four different chemical compositions ($xNa_2O{\cdot}B_2O_3{\cdot}ySiO_2$). Our MD simulations demonstrate that glass surfaces have significantly different chemical compositions and structures from the bulk glasses. Because glass surfaces forming an interface with solution are most likely the first dissolution-reaction occurring areas, the current MD result simply that composition-dependent glass dissolution behaviors should be understood by surface structural change upon the chemical composition change.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.41-41
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• 2008

In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.238-246
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• 1996

High-density SiC-AIN solid solutions were fabricated from powder mixtures of $\beta$-SiC and AIN by hot-pressing in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC (3C) powder transformed to the 2 H (wurzite) structure appeared to depend on the temperature and SiC/A1N ratio and seeds present. The crystalline phases consisted of a SiC-rich solid-solution phase and an A1N-rich solid-solution phase. At $2030^{\circ}C$ for 1 h, for a composition of 50 % AIN/50 % SiC with a seeding of $\alpha$-SiC, the complete solid solution could be obtained and the microstructures are equiaxed with a relatively homogeneous grain size of 2 H phases. The variation of the seeding of $\alpha$-SiC in SIC-A1N solid solutions could be attributed to the transformation behaviour and differences in size and shape of the grains, as well as to other factors, such as grain size distributions, compositional inhomogeneity, and structural defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.282-287
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• 2009

$Ni_xFe_{100-x}$ films with a thickness of about 100nm were deposited on Si(100) substrates at room temperature by a DC magnetron co-sputtering using Fe and Ni targets. Compositional, structural, electrical and magnetic properties of the films were investigated. $Ni_{67}Fe_{33}$, $Ni_{55}Fe_{45}$, $Ni_{50}Fe_{50}$, $Ni_{45}Fe_{55}$, $Ni_{40}Fe_{60}$ films are obtained by increasing the sputtering power of the Fe target. The films of x < 55 have BCC structure and show the phase transformation after annealing at the range of $300{\sim}450^{\circ}C$ for 2 h. On the other hand, the films of x < 50 have the mixed crystalline phases of BCC and FCC after the annealing treatment. The saturation magnetization was decreased initially by the phase transformation effect but then increased again after annealing at $450^{\circ}C$ due to the grain growth and crystallization of BCC phases.

• The Journal of Korean Academy of Prosthodontics
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• v.53 no.3
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• pp.262-275
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• 2015

The treatment of areas demanding esthetic requirements, such as maxillary anterior teeth, should take into account the achievement of a healthy, harmonious to the surrounding tissue, and an attractive smile line. In this case report, smile line, soft tissue and hard tissue morphology, and the anatomy and proportion of the tooth, must be considered. In patients with unesthetic maxillary anterior ratio due to inadequate gingival contour and diastema caused by peg lateralis, it would be challenging to achieve an esthetic restoration by orthodontic treatment alone. In such case, after orthodontic treatment, dento-gingivo-facial compositional diagnosis and analysis, followed by gingivectomy and prosthodontic restoration is needed to improve the interdental mesial/distal, width/length ratio to achieve a satisfactory esthetic result. In addition, when improving the tooth proportion of peg lateralis by prosthodontic treatment, Porcelain laminate veneer (PLV), which results in less tooth structure loss, reproduction of similar shade to that of the proximal tooth and high transparency, is recommended. This case report demonstrates esthetic improvements by prosthodontic restoration through systematic diagnosis and treatment procedure in patients with unesthetic maxillary anterior proportion after orthodontic treatment due to peg lateralis by means of two female patients aged twenty years old.

• Journal of the Korean association of regional geographers
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• v.19 no.4
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• pp.641-653
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• 2013

This study analyzed the location of manufacturing industries and works' residence in Yangsan city of which large part of industries were relocated from Busan metropolitan area along the industrial suburbanization process. Through the field survey, in-depth interview, and analysis of statistical data, the study tried to describe the relocation characteristics of manufacturing industries in Yangsan city. The results of the analysis are as follows: 1. The relocation rate of manufacturing industries from Busan to Yangsan was very high in 1980s. As a result of analysis, the first prime factor on relocation was the site problem for industrial land use. But for the newly starting industries, the most important factor was the subcontract networks among industries which differed from relocated ones. 2. The industrial suburbanization process influenced on the industrial structure strongly, as the compositional weight of rubber and plastic industries in Yangsan became greater and the size of the major plants got larger. 3. The manufacturing industries in Yangsan city were widely distributed on the main national industrial districts. Also, they were diffused out to the other places beyond the boundary of industrial districts. 4. The commuting workers' residence in Busan, employed by the plants of Yangsan marked 44.5%. That confirmed the strong influence of Busan labor market.

• Journal of the Mineralogical Society of Korea
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• v.23 no.4
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• pp.377-393
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• 2010

Pumiceous tuffs occurring in the Beomgockri Group are examined applied-mineralogical characteristics and their controling factors to evaluate their potentials as the adsorption-functional mineral resources. The pumiceous tuffs are diagenetically altered to low-grade zeolitcs and bentonites in the Janggi area. Compositional specialty due to the presence of pumice fragments induces the altered tuffs to exhibit the characteristic adsorption property combined with cation exchange capacity, specific surface area, and acidic pH. Unusual lower pH in the adsorption-functional mineral substances is turned out to be originated from the presence of H-smectite having $H^+$ in the interlayer site of the sheet structure. On account of disordered crystallinity resulting from the exchanged $H^+$ in the interlayer site, the smectite commonly forms crenulated edges in the planar crystal form and exhibits characteristic X-ray diffraction patterns showing comparatively lower intensities of basal spacings including (001) peak than conventional Ca-smectite. Based on the interpretation of paragenetic relations and precursor of the H-smectite, a genetic model of the peculiar clay mineral was proposed. The smectite formation may be facilitated resulting from the precipitation of opal-CT at decreasing pH condition caused by the release of H+ during diagenetic alteration of pumice fragments. Because of the acidic smectite, the low-grade mineral resources from the Beomgockri Group may be applicable to the adsorption industry as the raw materials of acid clays and bed-soil.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.961-968
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• 1998

In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.