• Title/Summary/Keyword: Complementary metal oxide semiconductor (CMOS)

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A 6 Gb/s Low Power Transimpedance Amplifier with Inductor Peaking and Gain Control for 4-channel Passive Optical Network in 0.13 μm CMOS

  • Lee, Juri;Park, Hyung Gu;Kim, In Seong;Pu, YoungGun;Hwang, Keum Cheol;Yang, Youngoo;Lee, Kang-Yoon;Seo, Munkyo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.1
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    • pp.122-130
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    • 2015
  • This paper presents a 6 Gb/s 4-channel arrayed transimpedance amplifiers (TIA) with the gain control for 4-channel passive optical network in $0.13{\mu}m$ complementary metal oxide semiconductor (CMOS) technology. A regulated cascode input stage and inductive-series peaking are proposed in order to increase the bandwidth. Also, a variable gain control is implemented to provide flexibility to the overall system. The TIA has a maximum $98.1dB{\Omega}$ gain and an input current noise level of about 37.8 pA/Hz. The die area of the fabricated TIA is $1.9mm{\times}2.2mm$ for 4-channel. The power dissipation is 47.64 mW/1ch.

Crystallization and Characterization of GeSn Deposited on Si with Ge Buffer Layer by Low-temperature Sputter Epitaxy

  • Lee, Jeongmin;Cho, Il Hwan;Seo, Dongsun;Cho, Seongjae;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.854-859
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    • 2016
  • Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.

Signal and Noise Analysis of Indirect-Conversion Digital Radiography Detectors Using Linear-systems Transfer Theory (선형시스템 전달이론을 이용한 간접변환방식 디지털 래디오그라피 디텍터의 신호 및 잡음 분석)

  • Yun, Seung-Man;Lim, Chang-Hwy;Han, Jong-Chul;Joe, Ok-La;Kim, Jung-Min;Kim, Ho-Kyung
    • Progress in Medical Physics
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    • v.21 no.3
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    • pp.261-273
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    • 2010
  • For the use of Indirect-conversion CMOS (complementary metal-oxide-semiconductor) detectors for digital x-ray radiography and their better designs, we have theoretically evaluated the spatial-frequency-dependent detective quantum efficiency (DQE) using the cascaded linear-systems transfer theory. In order to validate the developed model, the DQE was experimentally determined by the measured modulation-transfer function (MTF) and noise-power spectrum, and the estimated incident x-ray fluence under the mammography beam quality of W/Al. From the comparison between the theoretical and experimental DQEs, the overall tendencies were well agreed. Based on the developed model, we have investigated the DQEs values with respect to various design parameters of the CMOS x-ray detector such as phosphor quantum efficiency, Swank noise, photodiode quantum efficiency and the MTF of various scintillator screens. This theoretical approach is very useful tool for the understanding of the developed imaging systems as well as helpful for the better design or optimization for new development.

Repeat analysis of intraoral digital imaging performed by undergraduate students using a complementary metal oxide semiconductor sensor: An institutional case study

  • Yusof, Mohd Yusmiaidil Putera Mohd;Rahman, Nur Liyana Abdul;Asri, Amiza Aqiela Ahmad;Othman, Noor Ilyani;Mokhtar, Ilham Wan
    • Imaging Science in Dentistry
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    • v.47 no.4
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    • pp.233-239
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    • 2017
  • Purpose: This study was performed to quantify the repeat rate of imaging acquisitions based on different clinical examinations, and to assess the prevalence of error types in intraoral bitewing and periapical imaging using a digital complementary metal-oxide-semiconductor(CMOS) intraoral sensor. Materials and Methods: A total of 8,030 intraoral images were retrospectively collected from 3 groups of undergraduate clinical dental students. The type of examination, stage of the procedure, and reasons for repetition were analysed and recorded. The repeat rate was calculated as the total number of repeated images divided by the total number of examinations. The weighted Cohen's kappa for inter- and intra-observer agreement was used after calibration and prior to image analysis. Results: The overall repeat rate on intraoral periapical images was 34.4%. A total of 1,978 repeated periapical images were from endodontic assessment, which included working length estimation (WLE), trial gutta-percha (tGP), obturation, and removal of gutta-percha (rGP). In the endodontic imaging, the highest repeat rate was from WLE (51.9%) followed by tGP (48.5%), obturation (42.2%), and rGP (35.6%). In bitewing images, the repeat rate was 15.1% and poor angulation was identified as the most common cause of error. A substantial level of intra- and inter-observer agreement was achieved. Conclusion: The repeat rates in this study were relatively high, especially for certain clinical procedures, warranting training in optimization techniques and radiation protection. Repeat analysis should be performed from time to time to enhance quality assurance and hence deliver high-quality health services to patients

Noise Reduction Method in consideration of bandwidth of Low Pass Filter (저역통과 필터의 대역폭을 고려한 잡음 제거 방법)

  • Yang, Jeong-Ju;Jang, Won-Woo;Kwak, Boo-Dong;Kang, Bong-Soon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.05a
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    • pp.157-159
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    • 2010
  • Most digital cameras apply a Charge Coupled Device(CCD) Sensor or a Complementary Metal Oxide Semiconductor(COMS) Sensor. And the images captured these sensors include unwanted noises. In this paper, we proposed a method of the Noise Reduction(NR) about noise reduction or recovery in the image. The proposed NR method is related to Bandwidth of the Low Pass Filter(LPF). For improvement of NR, we were changing the filter coefficient of the LPF. The results of simulations with various filter coefficients, [1 2 1] in the LPF and [-1 2 -1] in the High Pass Filter(HPF) have ideal frequency bandwidth and high performance. We proposed a filter coefficient [1 2 1] and [-1 2 -1] in the LPF and the HPF respectively.

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Dynamic range extension of the n-well/gate-tied PMOSFET-type photodetector with a built-in transfer gate (내장된 전송 게이트를 가지는 n-well/gate가 연결된 구조의 PMOSFET형 광검출기의 동작 범위 확장)

  • Lee, Soo-Yeun;Seo, Sang-Ho;Kong, Jae-Sung;Jo, Sung-Hyun;Choi, Kyung-Hwa;Choi, Pyung;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.19 no.4
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    • pp.328-335
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    • 2010
  • We have designed and fabricated an active pixel sensor(APS) using an optimized n-well/gate-tied p-channel metal oxide semiconductor field effect transistor(PMOSFET)-type photodetector with a built-in transfer gate. This photodetector has a floating gate connected to n-well and a built-in transfer gate. The photodetector has been optimized by changing the length of the transfer gate. The APS has been fabricated using a 0.35 ${\mu}m$ standard complementary metal oxide semiconductor(CMOS) process. It was confirmed that the proposed APS has a wider dynamic range than the APS using the previously proposed photodetector and a higher sensitivity than the conventional APS using a p-n junction photodiode.

Edge Adaptive Color Interpolation for Ultra-Small HD-Grade CMOS Video Sensor in Camera Phones

  • Jang, Won-Woo;Kim, Joo-Hyun;Yang, Hoon-Gee;Lee, Gi-Dong;Kang, Bong-Soon
    • Journal of information and communication convergence engineering
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    • v.8 no.1
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    • pp.51-58
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    • 2010
  • This paper proposes an edge adaptive color interpolation for an ultra-small HD-grade complementary metal-oxide semiconductor (CMOS) video sensor in camera phones that can process 720-p/30-fps videos. Recently, proposed methods with great image quality perceptually reconstruct the green component and then estimate the red/blue component using the reconstructed green and neighbor red and blue pixels. However, these methods require the bulky memory line buffers in order to temporally store the reconstructed green components. The edge adaptive color interpolation method uses seven or nine patterns to calculate the six edge directions. At the same time, the threshold values are adaptively adjusted by the sum of the color values of the selected pixels. This method selects the suitable one among the patterns using two flowcharts proposed in this paper, and then interpolates the missing color values. For verification, we calculated the peak-signal-to-noise-ratio (PSNR) in the test images, which were processed by the proposed algorithm, and compared the calculated PSNR of the existing methods. The proposed color interpolation is also fabricated with the 0.18-${\mu}m$ CMOS flash memory process.

Evaluation of Dose Distribution of 6 MV X-ray using Optical Dosimetry (광 도시메트리시스템을 이용한 치료용 6 MV X선 선량분포 평가)

  • Kim, Sunghwan
    • Journal of the Korean Society of Radiology
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    • v.13 no.7
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    • pp.925-932
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    • 2019
  • In this paper, we developed optical dosimetry system with a plastic scintillator, a commercial 50 mm, f1.8 lens, and a commercial high-sensitivity CMOS (complementary metal-oxide semiconductor) camera. And, the correction processors of vignetting, geometrical distortion and scaling were established. Using the developed system, we can measured a percent depth dose, a beam profile and a dose linearity for 6 MV medical LINAC (Linear Accelerator). As results, the optically measured percent depth dose was well matched with the measured percent depth dose by ion-chamber within 2% tolerance. And the determined flatness was 2.8%. We concluded that the optical dosimetry system was sufficient for application of absorbed dose monitoring during radiation therapy.

Expandable Flash-Type CMOS Analog-to-Digital Converter for Sensor Signal Processing

  • Oh, Chang-Woo;Choi, Byoung-Soo;Kim, JinTae;Seo, Sang-Ho;Shin, Jang-Kyoo;Choi, Pyung
    • Journal of Sensor Science and Technology
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    • v.26 no.3
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    • pp.155-159
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    • 2017
  • The analog-to-digital converter (ADC) is an important component in various fields of sensor signal processing. This paper presents an expandable flash analog-to-digital converter (E-flash ADC) for sensor signal processing using a comparator, a subtractor, and a multiplexer (MUX). The E-flash ADC was simulated and designed in $0.35-{\mu}m$ standard complementary metal-oxide semiconductor (CMOS) technology. For operating the E-flash ADC, input voltage is supplied to the inputs of the comparator and subtractor. When the input voltage is lower than the reference voltage, it is outputted through the MUX in its original form. When it is higher than the reference voltage, the reference voltage is subtracted from the input value and the resulting voltage is outputted through the MUX. Operation of the MUX is determined by the output of the comparator. Further, the output of the comparator is a digital code. The E-flash ADC can be expanded easily.

Automatic Color Recognition System for Stockigt Sizing Test (I) - Bias of Stockigt sizing test based on observer's subjectiveness - (스테키히트 시험용 자동 발색 인지 시스템 개발을 위한 기초연구(I) - Stockigt 사이즈도 시험법에 영향을 주는 요인 분석 -)

  • 김재옥;김철환;박종열
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.36 no.1
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    • pp.1-8
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    • 2004
  • One of the most frequently used method for measurement of the degree of sizing (viz., hydrophobicity) is the Stockigt test. However, the Stockigt test was influenced by various factors such as dropping height, dropping amount, dropping speed and viewing angle. The resultant data of the sizing degree on the same specimen also varied according to different testers. Thus, the Stockigt test should be modified to be regarded as a highly reliable and reproducible standard method. For modifying the Stockigt test, it was required to quantify red coloration by reaction between 1% ferric chloride and 2% ammonium thiocyante during Stockigt testing. The cameras capturing the serial images during the red coloration process were the CMOS (Complementary Metal Oxide Semiconductor)-type and CCD (Charge Coupled Device)-type cameras. For measurement based on KS M 7025, the CCD-type camera must be used due to its high resolution, and on the other hand, for measurement based on Tappi Useful Method 429, the CMOS-type camera may be used owing to its low resolution. It was needed to covert the RGB values of a droplet image into HSV(Hue, Saturation, and Value) values because the human eyes are much closer to HSV than RGB. Among HSV values, the Hue value was accepted as the most reliable index consistent with the red coloration process by excluding the surrounding conditions such as light, tester's movement etc.