• Title/Summary/Keyword: Complementary Effect

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Attitude of Infant and Toddler′s Mother towards Massage Intervention (마사지 중재에 대한 영유아 어머니의 태도)

  • Jung Hyang-Mi
    • Child Health Nursing Research
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    • v.8 no.1
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    • pp.20-31
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    • 2002
  • The purpose of this study was to understand and analyze the subjective structure of attitude, opinion of infant and todder's mother, regarding the massage intervention in order to yield fundamental data for the activation scheme of the massage intervention. This research was based on a Q-Methodological approach. According to the results of this study, there were four categories of mothers' opinion about the massage intervention. The first type accepts the wholistic effect of massage intervention very positively that it improves infant's health in various aspects: prevention of diseases, promotion of the growth, settlement of sentiments, etc. The second type describes the effect of the intervention in the emotional aspect, such that the intimacy plays a very significant role in the intervention. The third type explains the complementary effect of the intervention that it eases symptoms rather than actually cures diseases. The fourth type emphasizes the healing effect of the intervention that it is required to go through professional training to utilize the effect. For example, a Kyongrak massage is very effective for curing diseases. In consideration of various types of massage intervention, it is very necessary to have a specialty for the massage intervention and develop unique mothers education programs depending upon different applications of the massage intervention in order to reorganize and activate the massage intervention as a nursing intervention for infant and toddlers.

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Development of Robot Contents to Enhance Cognitive Ability for the Elderly with Mild Cognitive Impairment (경도인지장애 노인의 인지능력 향상을 위한 로봇 콘텐츠 개발)

  • Lee, Yean-Hwa;Kim, Kab Mook;Tran, Tin Trung;Kim, Jong-Wook
    • The Journal of Korea Robotics Society
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    • v.11 no.2
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    • pp.41-50
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    • 2016
  • This paper describes the effect of a robot cognitive rehabilitation program on cognitive functions for the elderly with mild cognitive impairment, and compares it with traditional cognitive therapy programs. Three experiment groups including cognition therapy group, robot cognitive rehabilitation group, and hybrid group have been sampled and one comparative group has been organized for this research. 32 old people whose ages are between 61 and 88 with mild cognitive impairment participated in the programs with an admission of W care hospital. According to the program results, the cognitive therapy program alone had shown a positive effect on the attention function, and the robot cognitive rehabilitation program alone had a positive effect on the total intelligence and memory function. However, a simultaneous operation with both programs had shown a positive effect on the three intelligence areas such as total, basic, and management quotients as well as attention and memory functions as subsidiary factors. This paper has verified that the proposed robot cognitive rehabilitation program makes a positive effect on a cognitive function and plays a complementary role with traditional cognitive therapy programs.

High Performance of Printed CMOS Type Thin Film Transistor

  • You, In-Kyu;Jung, Soon-Won
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.17.2-17.2
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    • 2010
  • Printed electronics is an emerging technology to realize various microelectronic devices via a cost-effective method. Here we demonstrated a high performance of p-channel and n-channel top-gate/bottom contact polymer field-effect transistors (FETs), and applications to elementary organic complementary inverter and ring oscillator circuits by inkjet processing. We could obtained high field-effect mobility more than $0.4\;cm^2/Vs$ for both of p-channel and n-channel FETs, and successfully measured inkjet-printed polymer inverters. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. Optimized CMOS ring oscillators with p-type and n-type polymer transistors showed as high as 50 kHz operation frequency. This research was financially supported by development of next generation RFID technology for item level applications (2008-F052-01) funded by the ministry of knowledge economy (MKE).

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C-H Arylation of Nitroimidazoles and Nitropyrazoles Guided by the Electronic Effect of the Nitro Group

  • Jung, Haeun;Bae, Seri;Jang, Ha-Lim;Joo, Jung Min
    • Bulletin of the Korean Chemical Society
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    • v.35 no.10
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    • pp.3009-3014
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    • 2014
  • A palladium-catalyzed C-H arylation reaction of nitroimidazoles and nitropyrazoles was developed using aryl bromides as arene donors. The electron-withdrawing effect of the nitro group allows for direct C-H arylation reactions of the nitro diazoles with high regioselectivity under mild conditions. The new C-H arylation approach is thus complementary to nucleophilic substitution reactions, enabling the preparation of complex nitroazole compounds.

All-Organic Nanowire Field-Effect Transistors and Complementary Inverters Fabricated by Direct Printing

  • Park, Gyeong-Seon;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.632-632
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    • 2013
  • We generated single-crystal organic nanowire arrays using a direct printing method (liquidbridge- mediated nanotransfer molding) that enables the simultaneous synthesis, alignment and patterning of nanowires from molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. The position of the nanowires on complex structures is easy to adjust, because the mold is movable on the substrates before the polar liquid layer, which acts as an adhesive lubricant, is dried. Repeated application of the direct printing process can be used to produce organic nanowire-integrated electronics with twoor three-dimensional complex structures on large-area flexible substrates. This efficient manufacturing method is used to fabricate all-organic nanowire field-effect transistors that are integrated into device arrays and inverters on flexible plastic substrates.

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CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging

  • Jang, Juneyoung;Heo, Wonbin;Kong, Jaesung;Kim, Young-Mo;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.30 no.5
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    • pp.295-299
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    • 2021
  • In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

Characteristics of Nanowire CMOS Inverter with Gate Overlap (Gate Overlap에 따른 나노선 CMOS Inverter 특성 연구)

  • Yoo, Jeuk;Kim, Yoonjoong;Lim, Doohyeok;Kim, Sangsig
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.10
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    • pp.1494-1498
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    • 2017
  • In this study, we investigate the influence of an overlap between the gate and source/drain regions of silicon nanowire (SiNW) CMOS (complementary metal-oxide-semiconductor) inverter on bendable plastic substrates and describe their electrical characteristics. The combination of n-channel silicon nanowire field-effect transistor (n-SiNWFET) and p-channel silicon nanowire field-effect transistor (p-SiNWFET) operates as an inverter logic gate. The gains with a drain voltage ($V_{dd}$) of 1 V are 3.07 and 1.21 for overlapped device and non-overlapped device, respectively. The superior electrical characteristics of each of the SiNW transistors including steep subthreshold slopes and the high $I_{on}/I_{off}$ ratios are major factors that enable the excellent operation of the logic gate.

An Empirical Study of the Effect of Oil Prices on International Price Dispersion (원유가격이 국가 간 가격분산에 미치는 영향에 대한 실증 연구)

  • Lee, Inkoo
    • Korea Trade Review
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    • v.43 no.2
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    • pp.69-86
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    • 2018
  • The paper studies the degree of international price dispersion for 300 individual goods and services between cities of three country groups over 1999 and 2013, focusing on the role of oil prices in generating deviations from the law of one price. We find that while oil prices did not contribute to the trend in cross-country price dispersion, it does account for within-country price dispersion. Once the oil price effect is subtracted out, the remaining price dispersion between U.S. cities no longer exhibits a noticeable upward trend. If oil prices increase transportation costs, they should increase the deviations from the law of one price, raising price dispersion. Our findings indicate that this effect is more pronounced within a country, while factors such as elasticity of substitution and other trade barriers are likely to matter more in price dispersion across borders. We view our results as complementary to those that emphasize the role of time-varying factors in accounting for price dispersion.

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The Impact of National Stereotypes towards Country-of-Origin Images on Purchase Intention: Empirical Evidence from Countries of the Belt and Road Initiative

  • WANG, Li;SHEN, Xiangdong;YAN, Lei
    • The Journal of Asian Finance, Economics and Business
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    • v.9 no.1
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    • pp.409-422
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    • 2022
  • The purpose of this paper is to explore how the country-of-origin image mediates the effect of national stereotypes along two dimensions of perceived competence and warmth, on consumers' consumption behaviors, especially in today's environment, the capricious COVID-19 and the deepening and expanding "The Belt and Road" initiative. Research design, data, and methodology: After collecting 1500 primary data from twelve countries along the 21st - Century Maritime Silk Road, this paper conducts ANOVA and SEM in SPSS25.0 and AMOS 24.0 separately to analyze measurements, structural models, and hypotheses via using 1277 final samples. The mediation results illustrate the asymmetric dominance of the two dimensions of national stereotypes, indicating that the country-of-origin image shows the complementary mediation in the effect of perceived competence on purchase intention; whereas, the country-of-origin image holds the indirect-only mediation in the impact of perceived warmth on purchase intention. The results of the moderation show that the effect of country-of-origin image on purchase intention is more significant for consumers who perceive COVID-19 in China to be of lesser severity than those who believe it to be of higher severity. Based on the paper's results, some implications for practice and theory are highlighted.

Quasi-nonvolatile Memory Characteristics of Silicon Nanosheet Feedback Field-effect Transistors (실리콘 나노시트 피드백 전계효과 트랜지스터의 준비휘발성 메모리 특성 연구)

  • Seungho Ryu;Hyojoo Heo;Kyoungah Cho;Sangsig Kim
    • Journal of IKEEE
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    • v.27 no.4
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    • pp.386-390
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    • 2023
  • In this study, we examined the quasi-nonvolatile memory characteristics of silicon nanosheet (SiNS) feedback field-effect transistors (FBFETs) fabricated using a complementary metal-oxide-semiconductor process. The SiNS channel layers fabricated by photoresist overexposure method had a width of approximately 180 nm and a height of 70 nm. The SiNS FBFETs operated in a positive feedback loop mechanism and exhibited an extremely low subthreshold swing of 1.1 mV/dec and a high ON/OFF current ratio of 2.4×107. Moreover, SiNS FBFETs represented long retention time of 50 seconds, indicating the quasi-nonvolatile memory characteristics.