• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.370-371
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• 2011

This paper presents a control algorithm that minimizes the DC-link capacitance by decreasing the capacitor current. The capacitor current can be nullified by a feedback compensation term which is calculated from the power balance in the AC/DC converter. As a result, voltage variation in the DC-link is reduced further, which makes a large reduction in the size of DC-link capacitors which are expensive and have limitations in life time. Simulations are performed with two 80uF DC-link capacitors, which can be replaced by film capacitors.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1649-1651
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• 2008

A novel configured S-IPS LCD has been developed introducing a new compensation film with an anti-reflective layer. This new technology provides wide viewing characteristics as well as excellent visibility under bright indoor lighting or natural lighting.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.208-209
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• 2000

기존의 CRT(cathode-ray tube)를 사용한 TV, 모니터와 같은 디스플레이는 부피가 커서 공간을 많이 차지하고 휴대품으로는 거의 사용이 불가능하였다. 그러나, 평판 디스플레이의 하나인 LCD(liquid crystal display)는 소비 전력이 작고 부피가 작아서 게임기, Note-book PC와 같은 휴대용으로는 물론 PC용 모니터와 같은 사무용 디스플레이, TV와 같은 가정용 디스플레이를 대체해 나가고 있다. (중략)

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.1-4
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• 2000

We have developed a high performance vertical alignment TFT-LCD, that shows a high light transmittance, and wide viewing angle characteristics with an unusually high contrast ratio. In order to optimize the electro-optical properties we have studied the effect of cell parameters, multi-domain structure and retardation film compensation. With the optimized cell parameters and process conditions, we have achieved a 24" wide UXGA TFT-LCD monitor (16:10 aspect ratio 1920X1200) showing a contrast ratio over 500:1, panel transmittance near 4.5%, response time near 27 ms, and viewing angle higher than 80 degree in all directions.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.276-282
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• 1999

For the quantitative surface analysis of multicomponent materials, algorithms for the compensation of the matrix effect and surface compositional change by ion beam sputtering must be established and reference materials having certified compositions are necessary. These certified reference material (CRM)s are needed for the improvement of instrument performance, inter-laboratory comparison and quantitative surface analysis. Surface analysis group of KRISS developed alloy thin film CRMs by and ion beam sputter deposition system and in-situ surface analysis system to control the composition of alloy thin films The real compositions of the CRMs were certified by inductively coupled plasma-atomic emission spectroscopy (ICP-AES).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1476-1478
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• 1996

This paper describes the recent development of a thin-film pressure transducer with Cu-Ni films as strain gages. The construction details and the output characteristics are presented. In order to improve the sensitivity and the temperature compensation, two circumferential gages are placed in the central region of the diaphragm, and two radial gages are placed near the edge. The output sensitivity obtained is 2.1mV/V and the maximum non-linearity and hysteresis is less than 2%FS.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.417-420
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• 2007

A 12k-bit SRAM has been developed for line memory of system-on-glass (SoG) with lowtemperature poly-silicon (LTPS) thin film transistor (TFT). For accurate sensing even with the large variation and mismatches in the characteristics of LTPS TFT, mismatch immune sense amplifier is developed. The SRAM shows 30ns read access time with 7V supply voltage while dissipating 4.05mW and 1.75mW for write and read operation, respectively

• International journal of advanced smart convergence
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• v.12 no.4
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• pp.1-7
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• 2023

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.435-439
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• 2009

The reason of lowering the dielectric constant of SiOC film was studied using parameters obtained from C-V measurement and refractive index. SiOC film was formed by the force of ionic bonding during the recombination of dissociated gases. Generally, the dielectric constant was obtained from the square of the refractive index or C-V measurement using the metal/insulator/Si structure. The dielectric constant consists of the ionic and electronic elements. It was researched about the dielectric constant of SiOC film using the average of the ionic and electronic elements. The dielectric constant decreased after annealing process. As deposited films trended toward the dielectric constant consisted of most ionic elements, on the other hand, annealed films mostly consisted of electronic elements. Because the effect of ionic elements reduced after annealing. Consequently, it was found that the electronic effect of SiOC film increased and the ionic effect of SiOC film decreased by the after-annealing.