• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.5
• /
• pp.484-491
• /
• 2002

This paper presents the results of a study of voltage-controlled PIN diode attenuators for Ku-band satellite payload and suggests the temperature-compensation method of these attenuators. The PIN diode attenuators are designed using thin-film hybrid techniques. The load resistance for maximum linear characteristics is determined by simulation and measurements. In the case of APD0805, load resistance of 150 $\Omega$ gives attenuator up to 10 dB linear attenuation range per a PIN diode. Also, measurements over temperature of these PIN diode attenuators were performed. From these measurements, designed PIN diode attenuators shows the severe temperature dependency due to forward voltage variation. A temperature compensation method using thermistor is now suggested to compensate the temperature variation of these PIN diode attenuators. This circuit shows good linear characteristics over wide temperature range

• Journal of the Institute of Electronics Engineers of Korea SP
• /
• v.46 no.4
• /
• pp.97-107
• /
• 2009

In image-based gait recognition systems, physical factors, such as the camera angle and the lens distortion, and environmental factors such as illumination determines the performance of recognition. In this paper we present a robust gait recognition method by compensating various types of image distortions. The proposed method is compared with existing gait recognition algorithm with consideration of both physical and environmental distortion factors in the input image. More specifically, we first present an efficient compensation algorithm of image distortion by using the projective transform, and test the feasibility of the proposed algorithm by comparing the recognition performances with and without the compensation process. Proposed method gives universal gait data which is invariant to both distance and environment. Gained data improved gait recognition rate about 41.5% in indoor image and about 55.5% in outdoor image. Proposed method can be used effectively in database(DB) construction, searching and tracking of specific objects.

• International Journal of Control, Automation, and Systems
• /
• v.3 no.3
• /
• pp.477-485
• /
• 2005

This paper is concerned with the development of a micro tensile testing machine for optically functional materials such as single or poly crystalline silicon and nickel film. This micro tensile tester has been developed for testing various types of materials and dimensions. PZT type actuation is utilized for precise displacement control. The specifications of the PZT actuated micro tensile testers developed are as follows: the volumetric size of the tester is desktop type of 710mm' 200mm' 270mm; the maximum load capacity and the load resolution in this system are IKgf and 0.0152mgf respectively and; the full stroke and the stoke resolution of the PZT actuator are $1000{\mu}m$ and 10nm respectively. Special automatic specimen installing and setting equipment is applied in order to prevent unexpected deformation and misalignment of specimens during handling of specimens for testing. Nonlinearity of the PZT actuator is compensated to linear control input by an inverse compensation method that is proposed in this paper. The strain data is obtained by ISDG method that uses the laser interference phenomenon. To test the reliance of this micro tensile testing machine, a $200{\mu}m$ thickness nickel thin film and SCS (Single Crystalline Silicon) material that is made with the MEMS fabrication process are used.

• ETRI Journal
• /
• v.31 no.6
• /
• pp.660-666
• /
• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.34 no.12
• /
• pp.1079-1085
• /
• 2010

A steady-state analytical model was presented for a loop heat pipe (LHP) with an evaporator that has a flat geometry. On the basis of a series of reviews of the relevant literature, a sequence of calculations was proposed to predict the temperatures and pressures at each important part of the LHP: the evaporator, liquid reservoir (compensation chamber), liquid line, vapor line, and condenser. The analysis of the evaporator, which is the only part in the LHP that has a capillary structure, was emphasized. Thin-film theory is applied to account for the pressure and temperature in the region adjacent to the liquid-vapor interface in the evaporator. The present study introduced a unique method to estimate the liquid temperature at the interface. Relative freedom was assumed in the configuration of a condenser with a simplified liquid-vapor interface. Our steady-state model was validated by experimental results available in the literature. The relative error was within 3% on the absolute temperature scale, and reasonable agreement was obtained.

• Journal of Information Display
• /
• v.6 no.2
• /
• pp.12-15
• /
• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.49-50
• /
• 2006

We have developed vertical alignment liquid crystal display (VA-LCD), of which the viewing angle can be controlled. The VA-LCD has the function of switching between the wide viewing mode and narrow viewing angle mode using one homogeneous aligned (HA) LC layer and one compensation film with a negative C-plate. The retardation of the HA layer at off axis can be controlled by applying an electric field while keeping the retardation value to be zero at normal direction. Consequently, the device exhibits a viewing mode over $170^{\circ}$ in terms of CR = 10 in wide viewing mode and about $60^{\circ}$ in terms of CR = 2 in narrow viewing angle mode m horizontal direction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.107-108
• /
• 2006

ZnO is a promising material for UV or blue LEDs p-Type ZnO thin films which are imperative for the p-n junction of LEDs are difficult to achieve because of strong compensation of intrinsic defects such as zinc interstitial and oxygen vacancy. The method of codoping group three elements and group five elements is effective for the realization of p-type ZnO films. In this study, We codoped N and Al m ZnO thin films by RF magnetron sputtering and annealed the films in sputtering chamber. Some films showed p-type conductivity m Seeback effect measurement.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.589-594
• /
• 2003

The pi-cell [1] is known as one of the candidates for a fast response time and a good viewing angle characteristics due to a self-compensated configuration and can be a replaceable mode instead of the current TN mode and the IPS mode for moving picture in future. This paper shows the optimized condition to maintain bend state instead of splay state, which is mortal demerit for good optical properties in a pi-cell, by using the polymer stabilized method [2]. The good electro-optical characteristics are also obtained by optimizing the various factors, which are monomer concentration in a LC, UV intensity, curing time, curing voltage, and curing temperature, and by using retardation film. We use a scanning electron microscope to study the structures of the polymer stabilized polymer network in a pi-cell as a key to figure out why bend state is occurred.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.914-917
• /
• 2002

We have obtained high performance and low voltage driving OCB panel by reducing the critical voltage and retardation matching between liquid crystal layer and compensation films. The critical voltage in the panel has been minimized by flattening color filter layer and optimizing a rubbing process. In addition, an appropriate retardation of the film and LC layer has scanned to achieve low driving voltage and high transmission. The proto-type 17" WXGA OCB panel has demonstrated with less than 5V drive and over 80 degree for all viewing direction except for rubbing direction with over 90% of TN light efficiency.